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US 12,197,726 B2Granted
3D-stacked memory with reconfigurable compute logic
AssigneeSamsung Electronics Co., Ltd.
InventorsMu-Tien Chang, Prasun Gera, Dimin Niu, Hongzhong Zheng
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Abstract
A 3D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.
Claims20
A memory device comprising:
- a first circuit;
- and
- an interface for receiving a first command to configure the memory device, wherein the memory device is configured to operate in a first mode based on the first command including a first value, and configured to operate in a second mode based on the first command including a second value,
- wherein based on the memory device operating in the first mode, the first circuit is configured to receive a second command and translate the second command into a third command, wherein the third command is for performing computation of first data.
1 more element
A method comprising:
- receiving a first command to configure a memory device, wherein the memory device is configured to operate in a first mode based on the first command being associated with a first value, and configured to operate in a second mode based on the first command being associated with a second value;
- receiving a second command;
- based on the memory device being configured to operate in the first mode:
- translating the second command into a third command;
- and
- performing computation of first data based on the third command.
3 more elements
Dependencies are inferred from the claim text.