Inspection apparatus and method of inspecting wafer

An inspection apparatus comprising:

• a stage including an upper surface parallel to a first direction and a second direction intersecting the first direction, and supporting a wafer;
• an inspection signal source configured to emit a terahertz wave on the wafer;
• a first probe including a receiver antenna configured to detect the terahertz wave emitted by the inspection signal source and that has passed through the Wafer, and
• a second probe including an emitter antenna and a detector antenna, wherein the emitter antenna is configured to emit a terahertz wave to the wafer, and the detector antenna is configured to detect the terahertz wave emitted by the emitter antenna and reflected by the wafer,
• wherein the first probe includes:
• a first printed circuit board;
• a first probe tip, in which the receiver antenna is embedded, mounted on the first printed circuit board, wherein the receiver antenna includes, a first photoconductive switch;
• a first optical bracket coupled to the first printed circuit board;
• a first optical connector configured to transmit a first laser beam into the first probe, and coupled to the first optical bracket, wherein the first laser beam is configured to excite the first photoconductive switch;
• and
• a second optical connector configured to transmit a second laser beam into the first probe, and coupled to the first optical bracket, wherein the second laser beam is configured to excite the wafer;
• wherein the second probe includes:
• a second printed circuit board;
• a second probe tip, in which the emitter antenna and the detector antenna are embedded, mounted on the second printed circuit board, wherein the emitter antenna includes a second photoconductive switch, and wherein the detector antenna includes a third photoconductive switch;
• a second optical bracket coupled to the second printed circuit board;
• a third optical connector configured to transmit a third laser beam into the second probe, and coupled to the second optical bracket, wherein the third laser beam is configured to excite the second photoconductive switch;
• a fourth optical connector configured to transmit a. fourth laser beam into the second probe, and coupled to the second optical bracket, wherein the fourth laser beam is configured to excite the third photoconductive switch;
• and
• a fifth optical connector configured to transmit a fifth laser beam into the second probe, and coupled to the second optical bracket, wherein the fifth laser beam is configured to excite the wafer.

An inspection apparatus comprising:

• a stage including an upper surface parallel to a first direction and a second direction intersecting the first direction, and supporting a wafer;
• an inspection signal source configured to emit a terahertz wave on the wafer;
• a first probe including a receiver antenna configured to detect the terahertz wave emitted by the inspection signal source and that has passed through the wafer;
• and
• a second probe including an emitter antenna and a detector antenna, wherein the emitter antenna is configured to emit a terahertz wave to the wafer, and the detector antenna is configured to detect the terahertz wave emitted by the emitter antenna and reflected by the wafer,
• wherein the second probe includes:
• a second printed circuit board;
• a second probe tip, in which the emitter antenna and the detector antenna are embedded, mounted on the second printed circuit board, wherein the emitter antenna includes a second photoconductive switch, and wherein the detector antenna includes a third photoconductive switch;
• a second optical bracket coupled to the second printed circuit board;
• a third optical connector configured to transmit a third laser beam into the second probe, and coupled to the second optical bracket, wherein the third laser beam is configured to excite the second photoconductive switch;
• a fourth optical connector configured to transmit a fourth laser beam into the second probe, and coupled to the second optical bracket, wherein the fourth laser beam is configured to excite the third photoconductive switch;
• and
• a fifth optical connector configured to transmit a fifth laser beam into the second probe, and coupled to the second optical bracket, wherein the fifth laser beam is configured to excite the wafer.