Method of manufacturing oxide crystal thin film
AssigneeFlosfia Inc.
InventorsMasaya Oda, Toshimi Hitora
Life of this patent
Estimating the term…
Abstract
There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide.
Claims12
A method of manufacturing an oxide crystal film having conductivity as a semiconductor layer, via a mist CVD, said method comprising:
- preparing a raw material solution comprising water and at least one compound that is selected from among gallium bromide and indium bromide;
- forming raw material particles, via a misting method, from the raw material solution comprising water and the at least one compound in a mist source;
- supplying a carrier gas to the raw material particles formed in the mist source;
- carrying the raw material particles to a surface of a sample by the carrier gas;
- and
- forming the oxide crystal film that is a corundum-structured gallium oxide film or a corundum-structured indium oxide film,
- wherein the oxide crystal film is for a semiconductor device.
A method of manufacturing an oxide crystal film having conductivity as a semiconductor layer, said method comprising:
- preparing a raw material solution comprising water and at least one compound that is selected from among gallium bromide and indium bromide;
- forming raw material particles excluding a spray method from the raw material solution comprising water and the at least one compound in a mist source;
- supplying a carrier gas to the raw material particles formed in the mist source;
- carrying the raw material particles to a surface of a sample by the carrier gas;
- and
- forming the oxide crystal film that is a corundum-structured gallium oxide film or a corundum-structured indium oxide film,
- wherein the oxide crystal film is for a semiconductor device.
Dependencies are inferred from the claim text.