# US 12,193,331 B2 · Thermoelectric module

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- Number: US 12,193,331 B2
- Document ID: US12193331B2
- Status: Granted
- Kind: B2
- Application number: 18/213,314
- Filed: 2023-06-23
- Published: 2023-10-19
- Granted: 2025-01-07
- Earliest claimed: 2018-01-23
- Assignees: LG Innotek Co., Ltd.
- Applicants: LG Innotek Co., Ltd.
- Inventors: Min Sung Jo; Sue Kyung Oh
- Web page: https://patentgrep.com/patent/US12193331B2

## CPC

- H10N 10/17: characterised by the structure or configuration of the cell or thermocouple forming the device
- H10N 10/817: the junction being non-separable, e.g. being cemented, sintered or soldered
- H10N 10/13: characterised by the heat-exchanging means at the junction
- H10N 10/80: Constructional details
- H10N 10/82: Interconnections
- H10N 10/852: comprising tellurium, selenium or sulfur
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A thermoelectric module may comprise: a first metal support; a first heat conductive layer; a second heat conductive layer and formed from a resin composition; a plurality of first electrodes arranged on the second heat conductive layer; a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs alternately arranged on the plurality of first electrodes; a plurality of second electrodes arranged on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs; a third heat conductive layer arranged on the plurality of second electrodes, and made from the same resin composition as the resin composition that forms the first heat conductive layer; and a second metal support arranged on the third heat conductive layer, wherein the second heat conductive layer is arranged to encompass an upper surface of the first heat conductive layer and a side surface of the first heat conductive layer.

## Claims

### Claim 1

A thermoelectric element comprising:
a first metal substrate;
a first resin layer disposed on the first metal substrate;
a second resin layer disposed on the first resin layer;
a first electrode disposed on the second resin layer such that the second resin layer is between the first resin layer and the first electrode;
a semiconductor structure disposed on the first electrode; and
a second metal substrate disposed on the semiconductor structure,
wherein the second resin layer includes a first area between the first electrode and the first resin layer and a second area other than the first area,
wherein a maximum thickness of the second area is larger than a maximum thickness of the first resin layer, and
wherein the second area of the second resin layer includes a section whose thickness becomes thinner as the section extends away from a side surface of the first electrode.

### Claim 2 (depends on 1)

The thermoelectric element of claim 1,
wherein a maximum thickness of the first metal substrate is larger than the maximum thickness of the second area.

### Claim 3 (depends on 1)

The thermoelectric element of claim 1,
wherein the first resin layer is in direct contact with the first metal substrate,
wherein the second resin layer is in direct contact with the first resin layer, and
wherein the second resin layer is in direct contact with the first electrode.

### Claim 4 (depends on 1)

The thermoelectric element of claim 1,
wherein the first resin layer does not contact with the first electrode.

### Claim 5 (depends on 1)

The thermoelectric element of claim 1,
wherein an upper surface of the first area is lower than an upper surface of the second area.

### Claim 6 (depends on 5)

The thermoelectric element of claim 5,
wherein the first electrode is disposed on the upper surface of the first area.