US 12,193,318 B2Granted

Method of forming semiconductor device having carbon nanotube

AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.

InventorsMartin Christopher Holland, Timothy Vasen, Blandine Duriez

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Abstract

A method includes placing a first charged metal dot on a first position of a surface of a semiconductor substrate. A first charged region is formed on a second position of the surface of the semiconductor substrate. A precursor gas is flowed along a first direction from the first position toward the second position on the semiconductor substrate, thereby forming a first carbon nanotube (CNT) on the semiconductor substrate. A dielectric layer is deposited to cover the first CNT and the semiconductor substrate. A second charged metal dot is placed on a third position of a surface of the dielectric layer. A second charged region is formed on a fourth position of the surface of the dielectric layer. The precursor gas is flowed along a second direction from the third position toward the fourth position on the semiconductor substrate, thereby forming a second CNT on the first CNT.

Claims20

Dependent claims

A method, comprising:

flowing a metal complex-containing precursor gas comprising a metal ion toward a top surface of an insulating layer, wherein the metal complex-containing precursor gas comprises trimethylgallium (TMGa, Ga(CH3)3), triethylgallium (TEGa, Ga(C2H5)3, (CH3)3Pt(CpCH3), W(CO)6 or Co2(CO)9;
injecting an electron beam onto the top surface of the insulating layer such that the metal ion is pushed onto the top surface of the insulating layer by the electron beam and has a first charge type;
forming a charged region on the insulating layer and spaced apart from the metal ion;
flowing a precursor gas onto the insulating layer in a direction from the metal ion toward the charged region to form a first carbon nanotube (CNT) on the insulating layer, wherein the metal ion is at an end of the first CNT facing the charged region;
after flowing the precursor gas onto the insulating layer in the direction from the metal ion toward the charged region to form the first CNT on the insulating layer, changing the first charge type to a second charge type opposite to the first charge type, the first charge type is positive, and the second charge type is negative;
and
flowing the precursor gas to continue growth of the first CNT.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/688,259Filed 7 Mar 2022 · division
Priority: 18 Apr 2019
Published: US 2022/0190252 A116 Jun 2022
Granted: 7 Jan 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification23 codes

D01F 9/127
Carbon filaments; Apparatus specially adapted for the manufacture thereof: by thermal decomposition of hydrocarbon gases or vapours or other…
H10K 85/221
Carbon compounds, e.g. carbon nanotubes or fullerenes: carbon nanotubes
C23C 16/0281
Deposition of sub-layers, e.g. to promote the adhesion of the main coating: of metallic sub-layers
C23C 16/047
Coating on selected surface areas, e.g. using masks: using irradiation by energy or particles

Family

Application16/387,640Parent of this division · filed 18 Apr 2019
US 2022/0190252 A1Pre-grant publication · published 16 Jun 2022
US 11,271,163 B2Parent of this division
US 2020/0335701 A1Published application
US 12,193,318 B2This patent

From the US filing history. Foreign family members aren’t listed.