# US 12,193,296 B2 · Conductive pattern having first and second capping layers and display device including the same

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- Number: US 12,193,296 B2
- Document ID: US12193296B2
- Status: Granted
- Kind: B2
- Application number: 17/717,554
- Filed: 2022-04-11
- Published: 2023-03-23
- Granted: 2025-01-07
- Earliest claimed: 2021-09-17
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: Hyun Eok Shin; Do Keun Song; Dong Min Lee; Joon Yong Park; Hyun Ah Sung; Yun Jong Yeo; Dae Won Choi
- Web page: https://patentgrep.com/patent/US12193296B2

## CPC

- H10K 59/1315: {comprising structures specially adapted for lowering the resistance}
- H10K 59/1213: {the pixel elements being TFTs}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A conductive pattern is disclosed that includes a conductive layer including aluminum, a first capping layer disposed on the conductive layer and including titanium, and a second capping layer disposed on the first capping layer and including titanium nitride. A mixed region in which the aluminum and the titanium are mixed with each other is disposed in at least portions of the conductive layer and the first capping layer.

## Claims

### Claim 1

A conductive pattern comprising:
a conductive layer including aluminum;
a first capping layer disposed on the conductive layer and including titanium; and
a second capping layer disposed on the first capping layer and including titanium nitride,
wherein a mixed region in which the aluminum and the titanium are mixed with each other is disposed in at least portions of the conductive layer and the first capping layer.

### Claim 2 (depends on 1)

The conductive pattern of claim 1, wherein the conductive layer includes aluminum alone or an aluminum alloy.

### Claim 3 (depends on 2)

The conductive pattern of claim 2, wherein the aluminum alloy includes additive materials, and the additive materials include one or more of nickel, lanthanum, titanium, and neodymium.

### Claim 4 (depends on 3)

The conductive pattern of claim 3, wherein a content of the additive materials is within a range and including 0.1 to 1 at % based on a total aluminum alloy.

### Claim 5 (depends on 1)

The conductive pattern of claim 1, wherein the conductive layer has a thickness within a range and including 1500 to 4000 Å.

### Claim 6 (depends on 1)

The conductive pattern of claim 1, wherein the first capping layer has a thickness within a range and including 50 to 300 Å.

### Claim 7 (depends on 1)

The conductive pattern of claim 1, wherein the second capping layer has a thickness within a range and including 500 to 1000 Å.

### Claim 8 (depends on 1)

The conductive pattern of claim 1, wherein the mixed region includes aluminum-titanium alloys (TiAlx).

### Claim 9 (depends on 1)

The conductive pattern of claim 1, wherein the mixed region has a concentration gradient in which a content of the titanium gradually decreases toward a lower surface of the conductive layer in the mixed region.

### Claim 10 (depends on 1)

The conductive pattern of claim 1, wherein the mixed region includes TiAl3 alloys, TiAl2 alloys, and TiAl alloys.

### Claim 11 (depends on 10)

The conductive pattern of claim 10, wherein the TiAl3 alloys are adjacent to the second capping layer in the mixed region, and the TiAl alloys are adjacent to a lower surface of the conductive layer in the mixed region.

### Claim 12 (depends on 8)

The conductive pattern of claim 8, wherein the mixed region has a thickness of 100 to 600 Å.

### Claim 13 (depends on 1)

The conductive pattern of claim 1, wherein an atomic ratio of nitrogen to titanium in the second capping layer is 0.8 or more.

### Claim 14

A display device comprising:
a substrate;
at least one transistor disposed on the substrate; and
a light emitting element disposed on the transistor,
wherein the transistor includes at least one conductive pattern, and
wherein the conductive pattern includes:
a conductive layer including aluminum;
a first capping layer disposed on the conductive layer and including titanium; and
a second capping layer disposed on the first capping layer and including titanium nitride, and
wherein a mixed region in which the aluminum and the titanium are mixed with each other is disposed in at least portions of the conductive layer and the first capping layer.

### Claim 15 (depends on 14)

The display device of claim 14, wherein the at least one conductive pattern includes a gate electrode.

### Claim 16 (depends on 15)

The display device of claim 15, wherein the at least one transistor includes a semiconductor layer, the gate electrode disposed on the semiconductor layer, and a source electrode and a drain electrode each connected to the semiconductor layer.

### Claim 17 (depends on 14)

The display device of claim 14, wherein the conductive pattern further includes a third capping layer disposed on the second capping layer and including the same material as the first capping layer and a fourth capping layer disposed on the third capping layer and including the same material as the second capping layer.

### Claim 18 (depends on 14)

The display device of claim 14, wherein the mixed region includes aluminum-titanium alloys (TiAlx).

### Claim 19 (depends on 14)

The display device of claim 14, wherein the mixed region has a concentration gradient in which a content of the titanium gradually decreases toward a lower surface of the conductive layer in the mixed region.

### Claim 20 (depends on 14)

The display device of claim 14, wherein the mixed region includes TiAl3 alloys, TiAl2 alloys, and TiAl alloys, and
the TiAl3 alloys are adjacent to the second capping layer in the mixed region, and the TiAl alloys are adjacent to a lower surface of the conductive layer in the mixed region.