# US 12,193,280 B1 · High resolution advanced OLED sub-pixel circuit and patterning method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,193,280 B1 - Document ID: US12193280B1 - Status: Granted - Kind: B1 - Application number: 18/746,747 - Filed: 2024-06-18 - Granted: 2025-01-07 - Earliest claimed: 2023-12-08 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Jungmin Lee; Dieter Haas - Web page: https://patentgrep.com/patent/US12193280B1 ## CPC - H10K 59/122: Pixel-defining structures or layers, e.g. banks - H10K 59/124: Insulating layers formed between TFT elements and OLED elements - H10K 59/80515: {characterised by their shape} - H10K 59/873: {Encapsulations} - H10K 71/233: {by photolithographic etching} - H10K 59/35: comprising red-green-blue [RGB] subpixels - H10K 2102/351: {Thickness} - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract Embodiments described herein generally relate to a display. In one or more embodiments, a sub-pixel circuit includes at least two anodes disposed over a substrate. Adjacent anodes define a well. Adjacent overhang structures are disposed in the well. The overhang structures have an overhang thickness from the substrate to an upper surface of the overhang structures. The overhang thickness and the anode thickness are substantially equivalent. The overhang structures include overhang extensions extending past lower sidewalls. The well has a trench area defined by the lower sidewalls and a bottom surface of the overhang extensions, with a gap between the overhang extensions of the adjacent overhang structures. An organic light emitting diode (OLED) material is disposed over the anode, the upper surface of the overhang structures, under the overhang structures, and within the trench area. A cathode is disposed over the OLED material. ## Claims ### Claim 1 A sub-pixel circuit, comprising: at least two anodes disposed over a substrate, the anodes having an anode thickness from the substrate to an uppermost surface of the anode, adjacent anodes defining a well; adjacent overhang structures, the overhang structures comprising a first portion disposed in the well and overhang extensions extending past lower sidewalls of the first portion, wherein the well has a trench area defined by the lower sidewalls and a bottom surface of the overhang extensions with a gap between the overhang extensions of the adjacent overhang structures; an organic light emitting diode (OLED) material disposed over the anode, the upper surface of the overhang structures, under the overhang extensions, and within the trench area; a cathode disposed over the OLED material; and an encapsulation layer disposed over the cathode. ### Claim 2 (depends on 1) The sub-pixel circuit of claim 1, wherein the overhang structures further comprise a second portion, wherein the first portion comprises a first material and the second portion comprises a second material. ### Claim 3 (depends on 2) The sub-pixel circuit of claim 2, wherein the first material and the second material are different. ### Claim 4 (depends on 2) The sub-pixel circuit of claim 2, wherein the first material has a first etch rate and the second material has a second etch rate when exposed to an etchant. ### Claim 5 (depends on 4) The sub-pixel circuit of claim 4, wherein the first etch rate and the second etch rate are different. ### Claim 6 (depends on 1) The sub-pixel circuit of claim 1, wherein the cathode is disposed over the upper surface of the overhang structures, under the overhang structures, and within the trench area. ### Claim 7 (depends on 2) The sub-pixel circuit of claim 2, wherein the encapsulation layer extends under at least a portion of the second portion along a lower sidewall of the first portion, and contacts the bottom surface of the overhang extensions of the overhang structures. ### Claim 8 (depends on 1) The sub-pixel circuit of claim 1, wherein the OLED material is disposed on the substrate within the trench area. ### Claim 9 (depends on 1) The sub-pixel circuit of claim 1, further comprising a protective layer disposed on the substrate within the well and extending over at least a portion of the anodes. ### Claim 10 (depends on 1) The sub-pixel circuit of claim 1, wherein the OLED material disposed within the trench area contacts the lower sidewalls of the adjacent overhang structures. ### Claim 11 (depends on 1) The sub-pixel circuit of claim 1, wherein a first thickness of the OLED material disposed over the anodes and the upper surface of the overhang structures is larger than a second thickness of the OLED material disposed within the trench area. ### Claim 12 (depends on 2) The sub-pixel circuit of claim 2, wherein the first material comprises silicon. ### Claim 13 (depends on 2) The sub-pixel circuit of claim 2, wherein the second material comprises silicon oxide. ### Claim 14 (depends on 2) The sub-pixel circuit of claim 2, further comprising: a global encapsulation layer disposed over the encapsulation layer. ### Claim 15 (depends on 14) The sub-pixel circuit of claim 14, wherein the global encapsulation layer fills the trench area and the gap between the second portion of the adjacent overhang structures. ### Claim 16 A device, comprising: a first sub-pixel and a second sub-pixel each comprising: anodes disposed over a substrate; a plurality of overhang structures disposed over the substrate alongside opposite sidewalls of the anodes, the plurality of overhang structures comprising: a first portion comprising a first material, the first portion further comprising a lower sidewall; second portion disposed over at least a portion of the first portion, the second portion comprising a second material, the second portion further comprising an overhang extension extending past the lower sidewall, wherein the lower sidewall of the first portion and a bottom surface of the overhang extension of the second portion partially define a trench area; an organic light emitting diode (OLED) material disposed over the anode, an upper surface of the overhang structures under the overhang extension, and within the trench area; a cathode disposed over the OLED material; and an encapsulation layer disposed over the cathode. ### Claim 17 (depends on 16) The device of claim 16, wherein the first material has a first etch rate and the second material has a second etch rate. ### Claim 18 (depends on 17) The device of claim 17, wherein the first etch rate and the second etch rate are different. ### Claim 19 (depends on 16) The device of claim 16, wherein the cathode is disposed over the upper surface of the overhang structures, under the overhang structures, and within the trench area. ### Claim 20 (depends on 16) The device of claim 16, wherein the encapsulation layer extends under at least a portion of the second portion along the lower sidewall of the first portion, and contacts the bottom surface of the overhang extension of the overhang structures. ### Claim 21 (depends on 16) The device of claim 16, wherein the OLED material is disposed on the substrate within the trench area. ### Claim 22 (depends on 16) The device of claim 16, further comprising a protective layer disposed on the substrate within the trench area and extending over at least a portion of the anodes. ### Claim 23 (depends on 16) The device of claim 16, wherein the OLED material disposed within the trench area contacts the lower sidewall of the overhang structures. ### Claim 24 (depends on 16) The device of claim 16, wherein a first thickness of the OLED material disposed over the anodes and the upper surface of the overhang structures is larger than a second thickness of the OLED material disposed within the trench area. ### Claim 25 (depends on 16) The device of claim 16, wherein the first material comprises silicon. ### Claim 26 (depends on 16) The device of claim 16, wherein the second material comprises silicon oxide. ### Claim 27 (depends on 16) The device of claim 16, further comprising: a global encapsulation layer disposed over the encapsulation layer. ### Claim 28 (depends on 27) The device of claim 27, wherein the global encapsulation layer fills the trench area. ### Claim 29 A sub-pixel circuit, comprising: a plurality of anodes disposed over a substrate, adjacent anodes defining a well; adjacent overhang structures disposed in the well, the adjacent overhang structures comprising: a first portion, the first portion comprising a lower sidewall; a second portion disposed over at least a portion of the first portion, the second portion comprising an overhang extension extending past the lower sidewall, wherein the well has a trench area defined by the lower sidewall of the first portion and a bottom surface of the overhang extension of the second portion with a gap between the second portions of the adjacent overhang structures; an organic light emitting diode (OLED) material disposed over the anode, an upper surface of the overhang structures, under the overhang structures extension, and within the trench area; a cathode disposed over the OLED material disposed over the upper surface of the overhang structures, under the overhang structures, and within the trench area; and an encapsulation layer disposed over the cathode, wherein the encapsulation layer extends under at least a portion of the second portion along the lower sidewall of the first portion, and contacts the bottom surface of the overhang extension of the overhang structures. ### Claim 30 (depends on 29) The sub-pixel circuit of claim 29, wherein the first portion further comprises first material having a first etch rate, and the second portion further comprises a second material having a second etch rate, wherein the second material is different than the first material.