# US 12,193,277 B2 · Light-emitting device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,193,277 B2 - Document ID: US12193277B2 - Status: Granted - Kind: B2 - Application number: 17/769,342 - Filed: 2020-10-10 - Published: 2024-05-02 - Granted: 2025-01-07 - Earliest claimed: 2019-10-16 - Assignees: Najing Technology Corporation Limited - Applicants: Najing Technology Corporation Limited - Inventors: Huajin Ren; Xinyan Gu; Changgua Zhen - Web page: https://patentgrep.com/patent/US12193277B2 ## CPC - H10K 59/877: {comprising scattering means} - H10K 50/854: comprising scattering means - H10K 50/858: comprising refractive means, e.g. lenses - H10K 59/122: Pixel-defining structures or layers, e.g. banks - H10K 59/80: Constructional details - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract The present disclosure provides a light-emitting device. The light-emitting device includes a substrate layer and pixel isolation structures disposed on a first surface of the substrate layer, a plurality of sub-pixel regions isolated from each other are formed between the pixel isolation structures, and the light-emitting device further include a plurality of light-emitting units disposed one-to-one in each of the sub-pixel regions for emitting different wavelengths of light, the light-emitting units being electroluminescent devices, and an initial external quantum efficiency of each of the light-emitting units being different; a plurality of light extraction structures disposed one-to-one in at least part of the plurality of sub-pixel regions for increasing an external quantum efficiency of the corresponding light-emitting unit, reducing deviations of the actual external quantum efficiency of each of the light-emitting units. ## Claims ### Claim 1 A light-emitting device, comprising a substrate layer and pixel isolation structures disposed on a first surface of the substrate layer, a plurality of sub-pixel regions isolated from each other being formed between the pixel isolation structures, and further comprising: a plurality of light-emitting units disposed one-to-one in each of the sub-pixel regions for emitting different wavelengths of light, the light-emitting units being electroluminescent devices, and an initial external quantum efficiency of each of the light-emitting units being different; a plurality of light extraction structures disposed one-to-one in at least part of the plurality of sub-pixel regions for increasing an external quantum efficiency of the corresponding light-emitting units and reducing deviations of an actual external quantum efficiency of each of the light-emitting units, defining the light-emitting unit with the highest initial external quantum efficiency as a first light-emitting unit, the light-emitting unit with the lowest initial external quantum efficiency as a third light-emitting unit, and the light-emitting unit with the initial external quantum efficiency being between the highest initial external quantum efficiency of the first light-emitting unit and the lowest initial external quantum efficiency of the third light-emitting unit as a second light-emitting unit; the plurality of light-emitting units and the plurality of light extraction structures being disposed in one-to-one correspondence, and an improvement ratio of the external quantum efficiency of the first light-emitting unit by the light extraction structure being X1, an improvement ratio of the external quantum efficiency of the second light-emitting unit by the light extraction structure being X2, an improvement ratio of the external quantum efficiency of the third light-emitting unit by the light extraction structure being X3, and the X1, the X2 and the X3 being not equal, defining XN=Q2−Q1/Q1, wherein, the n is any natural number from 1 to 3, the Q1 is the initial external quantum efficiency of the corresponding light-emitting unit, and the Q2 is the actual external quantum efficiency of the corresponding light-emitting unit. ### Claim 2 (depends on 1) The light-emitting device according to claim 1, wherein the deviations of actual external quantum efficiency of each of the light-emitting units are within±15%. ### Claim 3 (depends on 1) The light-emitting device according to claim 1, wherein, X3>X2>X1. ### Claim 4 (depends on 1) The light-emitting device according to claim 1, wherein the light extraction structures are light scattering layers having scattering particles, and the light scattering layers corresponding to the first light-emitting unit, the second light-emitting unit and the third light-emitting unit are different. ### Claim 5 (depends on 4) The light-emitting device according to claim 4, wherein a value of particle diameter at 50% in a cumulative distribution (D50) of the scattering particles of the light scattering layers is different. ### Claim 6 (depends on 5) The light-emitting device according to claim 5, wherein, the D50 of the scattering particles of the light scattering layers is in a range of 150 to 350 nm. ### Claim 7 (depends on 5) The light-emitting device according to claim 5, wherein a value of particle diameter at 90% in a cumulative distribution (D90) of the scattering particles of the light scattering layers is different. ### Claim 8 (depends on 7) The light-emitting device according to claim 7, wherein, the D90 of the scattering particles of the light scattering layers is in a range of 150 to 350 nm. ### Claim 9 (depends on 4) The light-emitting device according to claim 4, wherein, a volume percentage of the scattering particles, a particle diameter of the scattering particles and a refractive index of the scattering particles in each of the light scattering layers are the same respectively, and a thickness of the light extraction structure corresponding to the first light-emitting unit is defined as H1, a thickness of the light extraction structure corresponding to the second light-emitting unit is defined as H2, and a thickness of the light extraction structure corresponding to the third light-emitting unit is defined as H3, wherein the H1, the H2 and the H3 are not equal. ### Claim 10 (depends on 9) The light-emitting device according to claim 9, wherein, the H1, the H2 and the H3 increase sequentially, H1≤300 nm, H2≤500 nm, H3≤1000 nm; or, the H1, the H2 and the H3 decrease sequentially, H1≥1500 nm, H2≥1200 nm, H3≥1000 nm. ### Claim 11 (depends on 9) The light-emitting device according to claim 9, wherein, the H1, the H2 and the H3 increase sequentially, the H3≤1000 nm, as the thickness of each of the light extraction structures increases, the actual external quantum efficiency of the corresponding light-emitting unit increases; or the H1, the H2 and the H3 decrease sequentially, the H3≥1000 nm, as the thickness of each of the light extraction structures decreases, the actual external quantum efficiency of the corresponding light-emitting unit increases. ### Claim 12 (depends on 4) The light-emitting device according to claim 4, wherein, a thickness of each of the light extraction structures, a particle diameter of the scattering particles and a refractive index of the scattering particles in each of the light extraction structures are the same respectively, and a volume percentage of the scattering particles of the light extraction structure corresponding to the first light-emitting unit is defined as V1, a volume percentage of the scattering particles of the light extraction structure corresponding to the second light-emitting unit is defined as V2, and a volume percentage of the scattering particles of the light extraction structure corresponding to the third light-emitting unit is defined as V3, wherein the V1, the V2 and the V3 are not equal. ### Claim 13 (depends on 12) The light-emitting device of claim 12, wherein, the thickness of the light extraction structure is any value of 300 nm to 800 nm and the volume percentage of the scattering particles of the light extraction structures corresponding to all the light-emitting units is 50% to 95%; or, the thickness of the light extraction structure is any value of 800 nm to 1200 nm and the volume percentage of the scattering particles of the light extraction structures corresponding to all the light-emitting units is 35% to 50%; or, the thickness of the light extraction structure is any value of 1200 nm to 1800 nm and the volume percentage of the scattering particles of the light extraction structures corresponding to all the light-emitting units is 10% to 35%. ### Claim 14 (depends on 4) The light-emitting device according to claim 4, wherein, a thickness of each of the light extraction structures, a volume percentage of the scattering particles and a particle diameter of the scattering particles in each of the light extraction structures are the same respectively, and a refractive index of the scattering particles of the light extraction structure corresponding to the first light-emitting unit is defined as K1, a refractive index of the scattering particles of the light extraction structure corresponding to the second light-emitting unit is defined as K2, and a refractive index of the scattering particles of the light extraction structure corresponding to the third light-emitting unit is defined as K3, wherein the K1, the K2 and the K3 are not equal. ### Claim 15 (depends on 14) The light-emitting device according to claim 14, wherein the refractive index of the scattering particles of the light extraction structures corresponding to all the light-emitting units is 2 to 2.6. ### Claim 16 (depends on 1) The light-emitting device according to claim 1, the light-emitting device further comprising a first intermediate layer disposed in at least one of the sub-pixel regions, and the first intermediate layer being located between the light-emitting unit and the light extraction structure of the at least one of the sub-pixel regions. ### Claim 17 (depends on 1) The light-emitting device according to claim 1, the light-emitting device further comprising an encapsulation unit for encapsulating the light-emitting units, and a second intermediate layer disposed in at least one of the sub-pixel regions, and the second intermediate layer being located between the light extraction structure of the at least one of the sub-pixel regions and the encapsulation unit. ### Claim 18 (depends on 1) The light-emitting device according to claim 1, the light-emitting device further comprising an encapsulation unit for encapsulating the light-emitting units, and a third intermediate layer, wherein, the third intermediate layer is disposed above at least one of the sub-pixel regions and located between the light extraction structure of the least one of the sub-pixel regions and the encapsulation unit, or the third intermediate layer is disposed between at least one of the pixel isolation structures and the encapsulation unit, or the third intermediate layer is disposed above at least one of sub-pixel regions and at least one of the pixel isolation structures, and the third intermediate layer is located on a side of the encapsulation unit close to the first surface. ### Claim 19 (depends on 1) The light-emitting device according to claim 1, wherein, at least one of the light extraction structures comprises quantum dots, and the light-emitting unit corresponding to the at least one of the light extraction structures comprising quantum dots is a blue light-emitting electroluminescent device.