# US 12,193,273 B2 · Method for fabricating displaying backplane, displaying backplane and displaying device

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- Number: US 12,193,273 B2
- Document ID: US12193273B2
- Status: Granted
- Kind: B2
- Application number: 18/512,114
- Filed: 2023-11-17
- Published: 2024-03-14
- Granted: 2025-01-07
- Earliest claimed: 2021-02-09
- Assignees: Boe Technology Group Co., Ltd.
- Applicants: BOE Technology Group Co., Ltd.
- Inventors: Jing Wang; Hongwei Tian; Ming Liu; Jia Zhao; Qiuhua Meng; Ziang Han
- Web page: https://patentgrep.com/patent/US12193273B2

## CPC

- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10K 59/1213: {the pixel elements being TFTs}
- H10K 59/122: Pixel-defining structures or layers, e.g. banks
- H10K 59/124: Insulating layers formed between TFT elements and OLED elements
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 86/0221: {comprising manufacture, treatment or patterning of TFT semiconductor bodies}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 59/1201: {Manufacture or treatment}
- H10K 71/00: Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K 71/20: Changing the shape of the active layer in the devices, e.g. patterning
- H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present disclosure provides a displaying backplane and a displaying device, and relates to the technical field of displaying. The displaying backplane includes: a substrate base plate; a first active layer and a second active layer that are provided on the substrate base plate, wherein the material of the first active layer and the second active layer is an oxide semiconductor, the first active layer has a first channel region and first no-channel regions, and the second active layer has a second channel region and second no-channel regions; a first grid insulating layer covering the first active layer and the second active layer; and a first grid and a second grid that are provided on the first grid insulating layer; wherein the oxygen-vacancy concentration of the first channel region is greater than the oxygen-vacancy concentrations of the first no-channel regions, the second no-channel regions and the second channel region.

## Claims

### Claim 1

A displaying backplane, wherein the displaying backplane comprises:
a substrate base plate;
a first active layer and a second active layer that are provided on the substrate base plate, wherein a material of the first active layer and the second active layer is an oxide semiconductor, the first active layer has a first channel region and first no-channel regions that are located on two sides of the first channel region, and the second active layer has a second channel region and second no-channel regions that are located on two sides of the second channel region;
a first grid insulating layer covering the first active layer and the second active layer; and
a first grid and a second grid that are provided on the first grid insulating layer, wherein an orthographic projection of the first grid on the first active layer coincides with the first channel region, and an orthographic projection of the second grid on the second active layer coincides with the second channel region;
wherein an oxygen-vacancy concentration of the first channel region is greater than oxygen-vacancy concentrations of the first no-channel regions, the second no-channel regions and the second channel region.

### Claim 2 (depends on 1)

The displaying backplane according to claim 1, wherein the displaying backplane further comprises a third grid covering the first grid;
wherein in a direction along a length of the first channel region, a size of the third grid is greater than or equal to a size of the first grid.

### Claim 3 (depends on 1)

The displaying backplane according to claim 1, wherein each of the first no-channel regions comprises a lightly doped region and a first conductorized region, and the first conductorized region is located on one side of the lightly doped region that is farther away from the first channel region; or, the first no-channel regions are second conductorized regions; and
the second no-channel regions are third conductorized regions.

### Claim 4 (depends on 1)

The displaying backplane according to claim 1, wherein the displaying backplane further comprises:
a second grid insulating layer covering the second grid and the first grid insulating layer;
an inter-layer-medium layer provided on the second grid insulating layer;
a first source, a first drain, a second source and a second drain that are provided on the inter-layer-medium layer, wherein the first source is connected to the first active layer by a first via hole, the first drain is connected to the first active layer by a second via hole, the second source is connected to the second active layer by a third via hole, the second drain is connected to the second active layer by a fourth via hole, and all of the first via hole, the second via hole, the third via hole and the fourth via hole penetrate the inter-layer-medium layer, the second grid insulating layer and the first grid insulating layer;
a planarization layer covering the first source, the first drain, the second source, the second drain and the inter-layer-medium layer;
an anode layer provided on the planarization layer, wherein the anode layer is connected to the first drain by a fifth via hole penetrating the planarization layer; and
a pixel defining layer provided on the planarization layer, wherein the pixel defining layer partially covers the anode layer, and the pixel defining layer has a plurality of pixel openings exposing the anode layer.

### Claim 5 (depends on 1)

A displaying device, wherein the displaying device comprises the displaying backplane according to claim 1.

### Claim 6 (depends on 5)

The displaying device according to claim 5, wherein the displaying device further comprises an organic luminescent layer provided within the pixel openings, a cathode layer covering the organic luminescent layer and the displaying backplane, and a packaging layer provided on the cathode layer;
wherein, the packaging layer is an organic packaging layer, an inorganic packaging layer, or a laminated-layer structure of an organic packaging layer and an inorganic packaging layer.