# US 12,193,269 B2 · Display apparatus and method of manufacturing the same

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- Number: US 12,193,269 B2
- Document ID: US12193269B2
- Status: Granted
- Kind: B2
- Application number: 17/357,894
- Filed: 2021-06-24
- Published: 2022-03-03
- Granted: 2025-01-07
- Earliest claimed: 2020-09-03
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: Kohei Ebisuno; Kwanyong Pak; Youngwon Kim; Jinseok Oh; Jin Jeon; Jingoo Jung; Kyunghyun Choi
- Web page: https://patentgrep.com/patent/US12193269B2

## CPC

- H10K 59/124: Insulating layers formed between TFT elements and OLED elements
- H10D 86/0212: {comprising manufacture, treatment or coating of substrates}
- H10K 59/1213: {the pixel elements being TFTs}
- H10K 77/10: Substrates, e.g. flexible substrates
- H10D 86/411: {characterised by materials, geometry or structure of the substrates}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 59/1201: {Manufacture or treatment}
- H10K 59/8731: {multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers}
- H10K 59/879: {comprising refractive means, e.g. lenses}
- H10K 59/8791: {Arrangements for improving contrast, e.g. preventing reflection of ambient light}
- Y02E 10/549: Organic PV cells
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

A display apparatus includes a main display area, and a component area including pixel groups spaced apart from each other and a transmission area between the pixel groups. The display apparatus further includes a substrate including a first base layer, a compensation layer, a first barrier layer, and a second barrier layer sequentially stacked on one another, a bottom metal layer between the first barrier layer and the second barrier layer, a buffer layer on the second barrier layer, main display elements on the substrate of the main display area, and auxiliary display elements on the substrate of the component area.

## Claims

### Claim 1

A display apparatus comprising:
a main display area; and
a component area comprising pixel groups spaced apart from each other and a transmission area between the pixel groups,
the display apparatus further comprising:
a substrate comprising a first base layer, a compensation layer, a first barrier layer, and a second barrier layer sequentially stacked on one another;
a bottom metal layer between the first barrier layer and the second barrier layer;
a buffer layer above the second barrier layer;
main display elements on the substrate of the main display area;
auxiliary display elements on the substrate of the component area; and
a thin film transistor comprising a semiconductor layer above the buffer layer,
wherein the buffer layer comprises:
a first buffer layer having a thickness of 80 Å to 250 Å; and
a second buffer layer on the first buffer layer and having a thickness of 1,000 Å to 4,000 Å,
wherein the second barrier layer comprises a first layer and a second layer on the first layer, and
wherein the second layer is greater in amount of chlorine than the first layer.

### Claim 2 (depends on 1)

The display apparatus of claim 1, wherein the first buffer layer comprises silicon nitride, and the second buffer layer comprises silicon oxide.

### Claim 3 (depends on 1)

The display apparatus of claim 1, wherein a refractive index of the first buffer layer is 1.8 to 2, and a refractive index of the second buffer layer is 1.3 to 1.6.

### Claim 4 (depends on 1)

The display apparatus of claim 1, wherein a thickness of the compensation layer is 500 Å to 2,000 Å.

### Claim 5 (depends on 1)

The display apparatus of claim 1, wherein the compensation layer comprises silicon oxynitride.

### Claim 6 (depends on 1)

The display apparatus of claim 1, wherein a refractive index of the compensation layer is 1.65 to 1.75.

### Claim 7 (depends on 1)

The display apparatus of claim 1, wherein a thickness of the first barrier layer is 500 Å to 2,000 Å.

### Claim 8 (depends on 1)

The display apparatus of claim 1, wherein the first barrier layer comprises silicon oxide.

### Claim 9 (depends on 8)

The display apparatus of claim 8, wherein the second barrier layer comprises a same material as the first barrier layer.

### Claim 10 (depends on 1)

The display apparatus of claim 1, wherein a refractive index of the first barrier layer is 1.3 to 1.6.

### Claim 11 (depends on 1)

The display apparatus of claim 1, wherein a thickness of the second barrier layer is 2,000 Å to 4,000 Å.

### Claim 12 (depends on 1)

The display apparatus of claim 1, further comprising a second base layer below the first base layer, and a third barrier layer between the first base layer and the second base layer.

### Claim 13 (depends on 1)

The display apparatus of claim 1, wherein the bottom metal layer comprises a first hole corresponding to the transmission area.

### Claim 14 (depends on 1)

The display apparatus of claim 1, wherein the bottom metal layer is arranged to correspond to the auxiliary display elements.

### Claim 15 (depends on 1)

The display apparatus of claim 1, wherein the bottom metal layer is directly on the first barrier layer.

### Claim 16 (depends on 1)

The display apparatus of claim 1, further comprising a thin-film encapsulation layer that covers the main display elements and the auxiliary display elements,
wherein the thin-film encapsulation layer comprises at least one inorganic encapsulation layer and at least one organic encapsulation layer.

### Claim 17 (depends on 1)

The display apparatus of claim 1, wherein the first buffer layer is directly on the second barrier layer.

### Claim 18 (depends on 1)

The display apparatus of claim 1, further comprising a component arranged below the substrate to correspond to the component area.

### Claim 19 (depends on 1)

A method of manufacturing the display apparatus of claim 1,
the method comprising:
forming the compensation layer on the first base layer;
forming the first barrier layer on the compensation layer;
forming the bottom metal layer on the first barrier layer;
forming the second barrier layer on the bottom metal layer; and
forming the buffer layer on the second barrier layer.

### Claim 20 (depends on 19)

The method of claim 19, wherein the forming of the buffer layer comprises:
forming the first buffer layer on the second barrier layer; and
forming the second buffer layer on the first buffer layer.

### Claim 21 (depends on 20)

The method of claim 20, wherein the forming of the first buffer layer comprises forming the first buffer layer on the second barrier layer by utilizing a gas comprising chlorine.

### Claim 22 (depends on 20)

The method of claim 20, further comprising, before the forming of the first buffer layer, radiating plasma comprising chlorine (Cl2) gas onto an upper surface of the second barrier layer.

### Claim 23 (depends on 20)

The method of claim 20, wherein the first buffer layer comprises silicon nitride, and the second buffer layer comprises silicon oxide.

### Claim 24 (depends on 19)

The method of claim 19, wherein a thickness of the first barrier layer is 500 Å to 2,000 Å.

### Claim 25 (depends on 19)

The method of claim 19, wherein a thickness of the second barrier layer is 2,000 Å to 4,000 Å.

### Claim 26 (depends on 19)

The method of claim 19, wherein materials of the first barrier layer and the second barrier layer are the same.

### Claim 27 (depends on 1)

The display apparatus of claim 1, wherein the semiconductor layer is directly above the second buffer layer.

### Claim 28 (depends on 1)

The display apparatus of claim 1, wherein the first buffer layer is directly on the second barrier layer, the second buffer layer is directly on the first buffer layer, and the semiconductor layer is directly on the second buffer layer.