# US 12,193,254 B2 · Quantum dot light-emitting device, manufacturing method and display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,193,254 B2 - Document ID: US12193254B2 - Status: Granted - Kind: B2 - Application number: 18/501,065 - Filed: 2023-11-03 - Published: 2024-02-22 - Granted: 2025-01-07 - Earliest claimed: 2019-05-31 - Assignees: Boe Technology Group Co., Ltd. - Applicants: BOE Technology Group Co., Ltd. - Inventors: Wenhai Mei; Zhenqi Zhang; Aidi Zhang - Web page: https://patentgrep.com/patent/US12193254B2 ## CPC - H10K 50/115: comprising active inorganic nanostructures, e.g. luminescent quantum dots - H10K 50/16: Electron transporting layers - H10K 85/40: Organosilicon compounds, e.g. TIPS pentacene - H10K 85/761: {Biomolecules or bio-macromolecules, e.g. proteins, chlorophyl, lipids or enzymes} - G03F 7/162: {Coating on a rotating support, e.g. using a whirler or a spinner} - G03F 7/168: {Finishing the coated layer, e.g. drying, baking, soaking} - H10K 71/12: using liquid deposition, e.g. spin coating - H10K 71/40: Thermal treatment, e.g. annealing in the presence of a solvent vapour - H10K 2102/321: {Inverted OLED, i.e. having cathode between substrate and anode} - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A quantum dot light-emitting device, a manufacturing method and a display device are provided. The quantum dot light-emitting device includes a cathode and an electron transport layer arranged on one side of the cathode, wherein the electron transport layer comprises a plurality of pixel regions; an adhesive layer arranged on one side of the electron transport layer, away from the cathode; a quantum dot film layer arranged on one side of the adhesive layer, away from the electron transport layer, wherein both the quantum dot film layer and the adhesive layer are located in the pixel regions; wherein the adhesive layer is respectively connected to the electron transport layer and the quantum dot film layer through at least one of chemical bonding and physical entanglement. ## Claims ### Claim 1 A quantum dot light-emitting device, comprising: a cathode and an electron transport layer arranged on one side of the cathode, wherein the electron transport layer comprises a plurality of pixel regions; an adhesive layer arranged on one side of the electron transport layer, away from the cathode; and a quantum dot film layer arranged on one side of the adhesive layer, away from the electron transport layer, wherein both the quantum dot film layer and the adhesive layer are located in the pixel regions; wherein the adhesive layer is respectively connected to the electron transport layer and the quantum dot film layer through at least one of chemical bonding and physical entanglement. ### Claim 2 (depends on 1) The quantum dot light-emitting device of claim 1, wherein material constituting the adhesive layer comprises a silane material, wherein the silane material comprises a first functional group and a second functional group, wherein the first functional group comprises at least one of an halogen atom, a hydroxyl group, an alkyl ether bond, an acetoxy group, a methoxy group, an amino group and an imino group, and the second functional group comprises at least one of a sulfhydryl group, an amino group, a carboxyl group and a methyl group. ### Claim 3 (depends on 1) The quantum dot light-emitting device of claim 1, wherein material constituting the adhesive layer comprises an avidin, the avidin comprises biotin and streptavidin connected to each other, and the streptavidin comprises an hydroxyl group and an amino group, and the biotin comprises a sulfur atom, a nitrogen atom and a carboxyl group. ### Claim 4 (depends on 2) The quantum dot light-emitting device of claim 2, wherein the number of atoms in a main chain of the silane material is less than 7. ### Claim 5 (depends on 2) The quantum dot light-emitting device of claim 2, wherein the silane material comprises trimethylchlorosilane, hexamethyldisilazane, tert-Butyldimethylsilyl chloride, triisopropoxysilane, dimethyldiacetoxysilane, di-tert-butyldichlorosilane or mercaptopropyltrimethoxysilane. ### Claim 6 (depends on 1) The quantum dot light-emitting device of claim 1, wherein material constituting the electron transport layer comprises metal oxide. ### Claim 7 (depends on 6) The quantum dot light-emitting device of claim 6, a surface of the metal oxide having a hydroxyl group. ### Claim 8 (depends on 6) The quantum dot light-emitting device of claim 6, wherein the metal oxide comprises at least one of zinc oxide, titanium oxide and nickel oxide. ### Claim 9 (depends on 1) The quantum dot light-emitting device of claim 1, further comprising: a hole transport layer arranged on one side of the quantum dot film layer, away from the adhesive layer; a hole injection layer arranged on one side of the hole transport layer, away from the quantum dot film layer; and an anode arranged on one side of the hole injection layer, away from the hole transport layer. ### Claim 10 A quantum dot light-emitting device, comprising: a cathode, an electron transport layer, a quantum dot film layer, and an adhesive layer arranged between the electron transport layer and the quantum dot film layer, wherein material constituting the adhesive layer comprises at least one of trimethylchlorosilane, hexamethyldisilazane, tert-Butyldimethylsilyl chloride, triisopropoxysilane, dimethyldiacetoxysilane, di-tert-butyldichlorosilane and mercaptopropyltrimethoxysilane. ### Claim 11 A method for manufacturing a quantum dot light-emitting device, comprising: forming an electron transport layer on one side of a cathode, wherein the electron transport layer comprises a plurality of pixel regions; and forming an adhesive layer and a quantum dot film layer, wherein the adhesive layer is arranged on one side of the electron transport layer, away from the cathode, and the quantum dot film layer is arranged on one side of the adhesive layer, away from the electron transport layer; wherein the adhesive layer is respectively connected to the electron transport layer and the quantum dot film layer through at least one of chemical bonding and physical entanglement. ### Claim 12 (depends on 1) A display device, comprising a housing and the quantum dot light-emitting device of claim 1, wherein the housing comprises a front frame and a back panel, and the front frame and the back panel form an accommodation space, and wherein the quantum dot light-emitting device is located inside the accommodation space, and a light-emitting side of the quantum dot light-emitting device is arranged away from the back panel.