# US 12,193,247 B2 · Imaging device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,193,247 B2 - Document ID: US12193247B2 - Status: Granted - Kind: B2 - Application number: 18/061,233 - Filed: 2022-12-02 - Published: 2023-03-30 - Granted: 2025-01-07 - Earliest claimed: 2019-09-05 - Assignees: Panasonic Intellectual Property Management Co., Ltd. - Applicants: Panasonic Intellectual Property Management Co., Ltd. - Inventors: Yoshihiro Sato; Satoshi Shibata; Ryota Sakaida - Web page: https://patentgrep.com/patent/US12193247B2 ## CPC - H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements} - H10F 39/011: {Manufacture or treatment of image sensors covered by group H10F39/12} - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 39/811: {Interconnections} - H10K 39/32: Organic image sensors - Y02E 10/549: Organic PV cells - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region. Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region. ## Claims ### Claim 1 An imaging device comprising: an imaging region including a plurality of pixels, each pixel including a photoelectric converter to generate a charge; a first doped region electrically connected to the photoelectric converter; a peripheral region located outside of the imaging region, with a circuit to drive the plurality of pixels being provided in the peripheral region; a second doped region of a first conductivity type located between the imaging region and the peripheral region; and a plurality of first contact plugs connected to the second doped region; a third doped region of a second conductivity type located between the peripheral region and the second doped region; and a plurality of second contact plugs provided in the third doped region, and a semiconductor substrate having the first doped regions, the second doped region, and the third doped region, wherein the semiconductor substrate further includes, inside the semiconductor substrate, an impurity layer of the second conductivity type that is located in a position deeper than the first doped regions; and the third doped region includes two portions each extending, in a cross section perpendicular to a surface of the semiconductor substrate, from the surface and reaching the impurity layer. ### Claim 2 (depends on 1) The imaging device of claim 1, wherein the third doped region surrounds the imaging region in an annular shape in plan view. ### Claim 3 (depends on 1) The imaging device of claim 1, further comprising a fourth doped region of the first conductivity type located between the peripheral region and the third doped region; and a plurality of third contact plugs provided in the fourth doped region. ### Claim 4 (depends on 2) The imaging device of claim 2, further comprising a fourth doped region of the first conductivity type located between the peripheral region and the third doped region; and a plurality of third contact plugs provided in the fourth doped region. ### Claim 5 (depends on 1) The imaging device of claim 1, wherein the semiconductor substrate further includes a plurality of fourth doped regions of the first conductivity type extending through the impurity layer. ### Claim 6 (depends on 5) The imaging device of claim 5, wherein the plurality of fourth doped regions include one or more doped regions located below the plurality of first contact plugs, the one or more doped regions being connected at one end to the second doped region. ### Claim 7 (depends on 1) The imaging device of claim 1, further comprising a first carbon-containing layer that contains carbon, the first carbon-containing layer being located between the plurality of first contact plugs and the second doped region. ### Claim 8 (depends on 7) The imaging device of claim 7, further comprising an isolation located between the imaging region and the plurality of first contact plugs in plan view. ### Claim 9 (depends on 7) The imaging device of claim 7, wherein a peak in carbon concentration along a depth direction of the semiconductor substrate in the first carbon-containing layer appears at a position shallower than a lower end of an isolation. ### Claim 10 (depends on 7) The imaging device of claim 7, further comprising a first silicide layer located between the plurality of first contact plugs and the first carbon-containing layer. ### Claim 11 (depends on 10) The imaging device of claim 10, wherein the first silicide layer comprises nickel. ### Claim 12 (depends on 1) The imaging device of claim 1, wherein, each pixel includes an electrically conductive portion that includes in a portion thereof a third contact plug electrically connected to the first doped region; the electrically conductive portion includes a first silicide layer; and the photoelectric converter is electrically connected to the first doped region via the electrically conductive portion. ### Claim 13 (depends on 12) The imaging device of claim 12, wherein the electrically conductive portion includes a first carbon-containing layer located between the first silicide layer and the first doped region. ### Claim 14 (depends on 12) The imaging device of claim 12, wherein the semiconductor substrate in each pixel includes a first carbon-containing layer located between the first doped region and the third contact plug. ### Claim 15 (depends on 1) The imaging device of claim 1, wherein the second doped region surrounds the imaging region in an annular shape in plan view. ### Claim 16 (depends on 1) The imaging device of claim 1, wherein the first conductivity type is P-type. ### Claim 17 An imaging device having a plurality of pixels, the imaging device comprising: a semiconductor substrate in which a plurality of doped regions are provided; and a photoelectric converter to generate a charge, wherein, each pixel includes: a portion of the photoelectric converter; one of the plurality of doped regions; and a contact plug electrically connected to the one of the plurality of doped regions; and the semiconductor substrate includes a carbon-containing layer that contains carbon, the carbon-containing layer being located between the doped regions and the contact plugs. ### Claim 18 (depends on 17) The imaging device of claim 17, wherein the portion of the photoelectric converter is electrically connected to the doped region via the contact plug. ### Claim 19 An imaging device comprising: an imaging region including a plurality of pixels, each pixel including a photoelectric converter to generate a charge, and a first doped region electrically connected to the photoelectric converter; a peripheral region located outside of the imaging region, with a circuit to drive the plurality of pixels being provided in the peripheral region; a second doped region of a first conductivity type located between the imaging region and the peripheral region; a plurality of first contact plugs connected to the second doped region, and a carbon-containing layer that contains carbon, the carbon-containing layer being located below the plurality of first contact plugs. ### Claim 20 (depends on 19) The imaging device of claim 19, further comprising an isolation located between the imaging region and the plurality of first contact plugs in plan view, wherein a peak in carbon concentration along a depth direction of the semiconductor substrate in the carbon-containing layer appears at a position shallower than a lower end of the isolation.