# US 12,193,238 B2 · Semiconductor devices

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,193,238 B2
- Document ID: US12193238B2
- Status: Granted
- Kind: B2
- Application number: 18/058,981
- Filed: 2022-11-28
- Published: 2023-03-23
- Granted: 2025-01-07
- Earliest claimed: 2020-02-04
- Assignees: SK hynix Inc.
- Applicants: SK hynix Inc.
- Inventors: Go Hyun Lee; Sung Wook Jung
- Web page: https://patentgrep.com/patent/US12193238B2

## CPC

- H10B 43/50: characterised by the boundary region between the core and peripheral circuit regions
- H10B 41/10: characterised by the top-view layout
- H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 41/35: with a cell select transistor, e.g. NAND
- H10B 41/50: characterised by the boundary region between the core region and the peripheral circuit region
- H10B 43/10: characterised by the top-view layout
- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 43/35: with cell select transistors, e.g. NAND
- H10W 20/42: Vias, e.g. via plugs
- H10B 43/40: characterised by the peripheral circuit region
- H10B: ELECTRONIC MEMORY DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes a plurality of first slits disposed at a boundary region of contiguous memory blocks isolating the memory blocks from each other, and disposed to be spaced apart from each other by a predetermined distance in a first direction; at least one word line disposed between the first slits disposed in a square shape; at least one drain selection line disposed over the word line; and a plurality of isolation patterns disposed to isolate each segment of the at least one drain selection line into units of a block. The at least one word line is integrated into a single structure.

## Claims

### Claim 1

A semiconductor device comprising:
a plurality of first slits disposed at a boundary region of contiguous memory blocks isolating the memory blocks from each other, and disposed to be spaced apart from each other by a predetermined distance in a first direction;
at least one word line disposed between the first slits disposed in a square shape;
at least one drain selection line disposed over the word line; and
a plurality of isolation patterns disposed to isolate each segment of the at least one drain selection line into units of a block,
wherein the at least one word line is integrated into a single structure.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the plurality of isolation patterns includes:
a first isolation pattern traversing a center region of the word line;
a second isolation pattern, arranged in the first direction with respect to the first isolation pattern, and
a third isolation pattern, arranged in the first direction with respect to the first isolation pattern opposite to the second isolation pattern.

### Claim 3 (depends on 2)

The semiconductor device according to claim 2, wherein the first, second and third isolation patterns isolate segments of the at least one drain selection line from each other.

### Claim 4 (depends on 2)

The semiconductor device according to claim 2, wherein:
the first isolation pattern extends in a second direction, and is longer in the second direction than each of the second isolation pattern and the third isolation pattern.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein the plurality of first slits includes a first outer slit and a second outer slit,
wherein the first and second outer slits are disposed at opposite sides of the word line with respect to the first direction, and extend in a second direction.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, wherein the at least one drain selection line are disposed between the plurality of first slits, and are spaced apart from each other by a predetermined distance based on the first direction.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, wherein each of the at least one drain selection line extends in a second direction.

### Claim 8 (depends on 2)

The semiconductor device according to claim 2, wherein the second isolation pattern extends in a second direction.

### Claim 9 (depends on 2)

The semiconductor device according to claim 2, wherein the third isolation pattern extends in a second direction.