# US 12,193,207 B2 · Semiconductor device and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,193,207 B2 - Document ID: US12193207B2 - Status: Granted - Kind: B2 - Application number: 17/476,794 - Filed: 2021-09-16 - Published: 2022-03-17 - Granted: 2025-01-07 - Earliest claimed: 2020-09-14 - Assignees: Changxin Memory Technologies, Inc. - Applicants: Changxin Memory Technologies, Inc. - Inventors: Xinran Liu; Yule Sun - Web page: https://patentgrep.com/patent/US12193207B2 ## CPC - H10B 12/03: {Making the capacitor or connections thereto} - H10D 1/716: {having vertical extensions} - H10B 12/00: Dynamic random access memory [DRAM] devices - H10B 12/033: {the capacitor extending over the transistor} - H10B 12/30: {DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells} - H10B: ELECTRONIC MEMORY DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract The present disclosure provides a semiconductor device and a method for manufacturing the same, and relates to the field of semiconductor technologies. The manufacturing method includes: providing a substrate and forming a film layer stack structure thereon; etching the film layer stack structure to form a first region containing a through hole through which the substrate is exposed and a second region containing a hole section through which the substrate is not exposed; and patterning and etching the second region to remove the film layer stack structure within the second region. ## Claims ### Claim 1 A method for manufacturing a semiconductor device, comprising: providing a substrate and forming a film layer stack structure thereon; etching the film layer stack structure to form a first region containing a through hole through which the substrate is exposed and a second region containing a hole section through which the substrate is not exposed; and patterning and etching the second region to remove the film layer stack structure within the second region; and, wherein there are a plurality of the through holes, the substrate directly opposite to the first region comprises a plurality of storage node contact plugs, and each of the storage node contact plugs is exposed through each of the through holes in a one-to-one correspondence. ### Claim 2 (depends on 1) The method according to claim 1, wherein etching the film layer stack structure to form a first region containing a through hole through which the substrate is exposed and a second region containing a hole section through which the substrate is not exposed comprises: forming a mask material layer on a side of the film layer stack structure facing away from the substrate; forming a photoresist layer on a surface of the mask material layer facing away from the substrate; exposing and developing the photoresist layer to form a plurality of developing regions, wherein the mask material layer is exposed through each of the developing regions; etching the mask material layer in the developing region to form a mask pattern; and anisotropically etching the film layer stack structure based on the mask pattern, wherein the substrate acts as an etching stop layer, and the through hole is formed in the film layer stack structure disposed in the first region and the hole section is formed in the film layer stack structure disposed in the second region. ### Claim 3 (depends on 1) The method according to claim 1, wherein patterning and etching the second region to remove the film layer stack structure within the second region comprises: forming a photoresist layer on a surface of the first region; etching the film layer stack structure within the second region and the substrate directly opposite to the second region; and removing the photoresist layer. ### Claim 4 (depends on 3) The method according to claim 3, wherein etching the film layer stack structure within the second region and the substrate directly opposite to the second region comprises: dry etching the film layer stack structure within the second region in a direction perpendicular to the film layer stack structure by using an etching gas. ### Claim 5 (depends on 4) The method according to claim 4, wherein the etching gas comprises at least one of carbon tetrafluoride gas or sulfur hexafluoride gas. ### Claim 6 (depends on 1) The method according to claim 1, wherein the first region is a central region of the film layer stack structure, and the second region is an edge region of the film layer stack structure. ### Claim 7 (depends on 1) The method according to claim 1, wherein the method further comprises: forming a capacitor array in each of the through holes. ### Claim 8 (depends on 7) The method according to claim 7, wherein the film layer stack structure comprises a supporting layer and a sacrificial layer which are overlapped in a direction perpendicular to the substrate, and forming the capacitor array in each of the through holes comprises: forming a lower electrode layer in each of the through holes, wherein the lower electrode layer is contacted and connected with the storage node contact plug; removing each of the sacrificial layers; forming a capacitor dielectric layer on a surface of a structure formed by the lower electrode layer and the supporting layer; forming an upper electrode layer on a surface of the capacitor dielectric layer facing away from the lower electrode layer; and forming a conductive layer covering the upper electrode layer, wherein the conductive layer fills the through hole and a gap between two adjacent capacitors. ### Claim 9 (depends on 1) A semiconductor device, wherein the semiconductor device is prepared by the method for manufacturing a semiconductor device according to claim 1. ### Claim 10 (depends on 2) A semiconductor device, wherein the semiconductor device is prepared by the method for manufacturing a semiconductor device according to claim 2. ### Claim 11 (depends on 3) A semiconductor device, wherein the semiconductor device is prepared by the method for manufacturing a semiconductor device according to claim 3. ### Claim 12 (depends on 4) A semiconductor device, wherein the semiconductor device is prepared by the method for manufacturing a semiconductor device according to claim 4. ### Claim 13 (depends on 5) A semiconductor device, wherein the semiconductor device is prepared by the method for manufacturing a semiconductor device according to claim 5. ### Claim 14 (depends on 6) A semiconductor device, wherein the semiconductor device is prepared by the method for manufacturing a semiconductor device according to claim 6. ### Claim 15 (depends on 8) A semiconductor device, wherein the semiconductor device is prepared by the method for manufacturing a semiconductor device according to claim 8. ### Claim 16 (depends on 9) A semiconductor device, wherein the semiconductor device is prepared by the method for manufacturing a semiconductor device according to claim 9.