# US 12,192,660 B2 · Photoelectric conversion device, photoelectric conversion system, and moving body > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,192,660 B2 - Document ID: US12192660B2 - Status: Granted - Kind: B2 - Application number: 18/352,371 - Filed: 2023-07-14 - Published: 2023-11-09 - Granted: 2025-01-07 - Earliest claimed: 2021-02-03 - Assignees: Canon Kabushiki Kaisha - Applicants: Canon Kabushiki Kaisha - Inventors: Yusuke Onuki - Web page: https://patentgrep.com/patent/US12192660B2 ## CPC - H04N 25/59: by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance - H04N 25/772: comprising A/D, V/T, V/F, I/T or I/F converters - H04N 25/771: comprising storage means other than floating diffusion - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION ## Abstract A photoelectric conversion device includes a photoelectric converter, a first node configured to be supplied with charges from the photoelectric converter, an amplification transistor configured to output a signal corresponding to a voltage of the first node, a first transistor configured to open/close a path between the first node and a second node not included in a path from the photoelectric converter to the first node, and a second transistor configured to open/close a path between the second node and a third node. A second capacitance which is added to the second node when the second transistor is set in a conductive state is larger than a first capacitance which is added to the first node when the first transistor is set in a conductive state. ## Claims ### Claim 1 A photoelectric conversion device comprising: a photoelectric converter; a first node configured to be supplied with charges from the photoelectric converter; an amplification transistor configured to output a signal corresponding to a voltage of the first node; a first transistor configured to open/close a path between the first node and a second node not included in a path from the photoelectric converter to the first node; and a second transistor configured to open/close a path between the second node and a third node, wherein a gate length of the second transistor is longer than a gate length of the first transistor. ### Claim 2 (depends on 1) The device according to claim 1, wherein a gate width of the second transistor is equal to a gate width of the first transistor. ### Claim 3 (depends on 1) The device according to claim 1, wherein a channel length direction of the first transistor and the second transistor is parallel to one side of the photoelectric converter. ### Claim 4 (depends on 1) The device according to claim 1, wherein the first transistor, the second transistor, and a third transistor are arranged in a first active region, and wherein the amplification transistor is arranged in a second active region. ### Claim 5 (depends on 4) The device according to claim 4, wherein the selection transistor is arranged in the second active region. ### Claim 6 (depends on 1) The device according to claim 1, wherein a second capacitance which is added to the second node when the second transistor is set in a conductive state is larger than a first capacitance which is added to the first node when the first transistor is set in a conductive state. ### Claim 7 (depends on 1) The device according to claim 1, wherein a third capacitance which is added to the third node when a third transistor is set in a conductive state is larger than the second capacitance which is added to the second node when the second transistor is set in a conductive state. ### Claim 8 (depends on 1) The device according to claim 1, wherein a difference between a gate width of the first transistor and a gate width of the second transistor is smaller than a difference between a gate length of the first transistor and a gate length of the second transistor. ### Claim 9 (depends on 1) A photoelectric conversion system comprising: the photoelectric conversion device according to claim 1; and a signal processor configured to process a signal output from the photoelectric conversion device. ### Claim 10 (depends on 1) A moving body comprising: the photoelectric conversion device according to claim 1; a distance information acquisition unit configured to acquire distance information to a target object from distance measurement information based on a signal from the photoelectric conversion device; and a control unit configured to control the moving body based on the distance information. ### Claim 11 A photoelectric conversion device comprising: a photoelectric converter; a first node configured to be supplied with charges from the photoelectric converter; an amplification transistor configured to output a signal corresponding to a voltage of the first node; a first transistor configured to open/close a path between the first node and a second node not included in a path from the photoelectric converter to the first node; a second transistor configured to open/close a path between the second node and a third node; a third transistor arranged in a path between the third node and a fourth node; and a reset transistor configured to reset a potential of the first node, and to open/close a path between the fourth node and a predetermined voltage line, wherein a fixed potential that sets the third transistor in a conductive state is applied to a gate of the third transistor from the predetermined voltage line. ### Claim 12 (depends on 11) The device according to claim 11, wherein a capacitance of the third transistor is larger than a capacitance of the first transistor. ### Claim 13 (depends on 11) The device according to claim 11, wherein a capacitance of the third transistor is larger than a capacitance of the first node when the first transistor is in a non-conductive state. ### Claim 14 (depends on 11) The device according to claim 11, wherein a gate width of the second transistor is equal to a gate width of the first transistor. ### Claim 15 (depends on 11) The device according to claim 11, wherein a difference between a gate width of the first transistor and a gate width of the second transistor is smaller than a difference between a gate length of the first transistor and a gate length of the second transistor. ### Claim 16 (depends on 11) The device according to claim 11, wherein a channel length direction of the first transistor and the second transistor is parallel to one side of the photoelectric converter. ### Claim 17 (depends on 11) The device according to claim 11, wherein the first transistor, the second transistor, and the third transistor are arranged in a first active region, and wherein the amplification transistor is arranged in a second active region. ### Claim 18 (depends on 17) The device according to claim 17, wherein the selection transistor is arranged in the second active region. ### Claim 19 (depends on 11) A photoelectric conversion system comprising: the photoelectric conversion device according to claim 11; and a signal processor configured to process a signal output from the photoelectric conversion device. ### Claim 20 (depends on 11) A moving body comprising: the photoelectric conversion device according to claim 11; a distance information acquisition unit configured to acquire distance information to a target object from distance measurement information based on a signal from the photoelectric conversion device; and a control unit configured to control the moving body based on the distance information. ### Claim 21 A photoelectric conversion device comprising: a photoelectric converter; a first node configured to be supplied with charges from the photoelectric converter; an amplification transistor configured to output a signal corresponding to a voltage of the first node; a first transistor configured to open/close a path between the first node and a second node not included in a path from the photoelectric converter to the first node; a second transistor configured to open/close a path between the second node and a third node; a third transistor arranged in a path between the third node and a fourth node; and a reset transistor configured to reset a potential of the first node, and to open/close a path between the fourth node and a predetermined voltage line, wherein a predetermined voltage line is connected to a gate of the third transistor. ### Claim 22 (depends on 21) The device according to claim 21, wherein a capacitance of the third transistor is larger than a capacitance of the first transistor. ### Claim 23 (depends on 21) The device according to claim 21, wherein a capacitance of the third transistor is larger than a capacitance of the first node when the first transistor is in a non-conductive state. ### Claim 24 (depends on 21) The device according to claim 21, wherein a gate width of the second transistor is equal to a gate width of the first transistor. ### Claim 25 (depends on 21) The device according to claim 21, wherein a difference between a gate width of the first transistor and a gate width of the second transistor is smaller than a difference between a gate length of the first transistor and a gate length of the second transistor. ### Claim 26 (depends on 21) A photoelectric conversion system comprising: the photoelectric conversion device according to claim 21; and a signal processor configured to process a signal output from the photoelectric conversion device. ### Claim 27 (depends on 21) A moving body comprising: the photoelectric conversion device according to claim 21; a distance information acquisition unit configured to acquire distance information to a target object from distance measurement information based on a signal from the photoelectric conversion device; and a control unit configured to control the moving body based on the distance information.