# US 12,192,657 B2 · Solid-state image sensor and imaging device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,192,657 B2 - Document ID: US12192657B2 - Status: Granted - Kind: B2 - Application number: 18/020,733 - Filed: 2021-08-04 - Published: 2023-09-21 - Granted: 2025-01-07 - Earliest claimed: 2020-09-28 - Assignees: Sony Semiconductor Solutions Corporation - Applicants: Sony Semiconductor Solutions Corporation - Inventors: Kazuki Hizu - Web page: https://patentgrep.com/patent/US12192657B2 ## CPC - H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components - G01J 1/02: Details - G01J 1/42: using electric radiation detectors (optical or mechanical part G01J1/04; by comparison with a reference light or electric value G01J1/10) - H04N 25/709: Circuitry for control of the power supply - H04N 25/773: comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD] - H04N 25/79: Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors - H10F 30/20: the devices having potential barriers, e.g. phototransistors - H10F 30/225: the potential barrier working in avalanche mode, e.g. avalanche photodiodes - H10F 39/12: Image sensors - H10F 39/809: {of hybrid image sensors} - H04N 25/131: including elements passing infrared wavelengths - H04N 25/133: including elements passing panchromatic light, e.g. filters passing white light - H04N 25/134: {based on three different wavelength filter elements} - H04N 25/135: {based on four or more different wavelength filter elements} - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N) - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract Improved is performance of a solid-state image sensor that detects presence or absence of a photon. The solid-state image sensor includes a light-receiving substrate and a logic substrate. In the solid-state image sensor, there is disposed, on the light-receiving substrate, a plurality of avalanche photodiodes, each of the avalanche photodiodes generating a current corresponding to incident of a photon. Furthermore, in the solid-state image sensor, there is disposed, on the logic substrate, a counter that counts the number of photons on the basis of a current of a selected avalanche photodiode among the plurality of avalanche photodiodes. ## Claims ### Claim 1 A solid-state image sensor comprising: a light-receiving substrate on which a plurality of avalanche photodiodes is disposed, each of the avalanche photodiodes generating a current corresponding to incidence of a photon; and a logic substrate on which a counter is disposed, the counter counting a number of the photons on a basis of the current of a selected avalanche photodiode among the plurality of avalanche photodiodes, wherein the plurality of avalanche photodiodes includes first and second avalanche photodiodes, and there are further disposed, on the logic substrate, a detection circuit that generates a pulse signal on a basis of a voltage according to the current and outputs the pulse signal to the counter, a first selection transistor that opens and closes a path between one end of the first avalanche photodiode and the detection circuit, a second selection transistor that opens and closes a path between one end of the second avalanche photodiode and the detection circuit, and a control circuit that controls a voltage of each gate of the first and second selection transistors. ### Claim 2 (depends on 1) The solid-state image sensor according to claim 1, wherein, in a case where at least one of the first and second selection transistors is in a closed state, the control circuit supplies the gate with a voltage higher than a difference between a potential of the one end after a potential drop due to the photon and each threshold voltage of the first and second selection transistors. ### Claim 3 (depends on 1) The solid-state image sensor according to claim 1, wherein the counter includes first and second counters, the detection circuit includes a first detection circuit that generates a first pulse signal and supplies the first pulse signal to the first counter, and a second detection circuit that generates a second pulse signal and supplies the second pulse signal to the second counter, the first selection transistor opens and closes a path between one end of the first avalanche photodiode and the first detection circuit, the second selection transistor opens and closes a path between one end of the second avalanche photodiode and the second detection circuit, there are further disposed, on the logic substrate, a third selection transistor that opens and closes a path between one end of the first avalanche photodiode and the second detection circuit, and a fourth selection transistor that opens and closes a path between one end of the second avalanche photodiode and the second detection circuit, and the control circuit further controls voltage of each gate of the third and fourth selection transistors. ### Claim 4 (depends on 1) The solid-state image sensor according to claim 1, wherein the control circuit includes an on-state voltage generation unit that generates a voltage according to a predetermined reference voltage as an on-state voltage, and a selector that selects either an off-state voltage different from the on-state voltage or the on-state voltage, and supplies the selected voltage to the gate. ### Claim 5 (depends on 1) The solid-state image sensor according to claim 1, wherein the detection circuit includes a first detection circuit that generates a first pulse signal and a second detection circuit that generates a second pulse signal, the first selection transistor opens and closes a path between one end of the first avalanche photodiode and the first detection circuit, the second selection transistor opens and closes a path between one end of the second avalanche photodiode and the second detection circuit, and there are further disposed, on the logic substrate, a first pulse-shaping circuit that shortens a pulse width of the first pulse signal, a second pulse-shaping circuit that shortens a pulse width of the second pulse signal, and a logical OR gate that supplies the counter with a logical OR of the first and second pulse signals having shortened pulse widths. ### Claim 6 (depends on 1) The solid-state image sensor according to claim 1, wherein there is further disposed, on the logic substrate, a clip transistor that fixes a potential of the one end to a predetermined value. ### Claim 7 (depends on 1) An imaging device comprising the solid-state image sensor according to claim 1. ### Claim 8 (depends on 7) The imaging device according to claim 7, wherein, in a case where at least one of the first and second selection transistors is in a closed state, the control circuit supplies the gate with a voltage higher than a difference between a potential of the one end after a potential drop due to the photon and each threshold voltage of the first and second selection transistors. ### Claim 9 (depends on 7) The imaging device according to claim 7, wherein the counter includes first and second counters, the detection circuit includes a first detection circuit that generates a first pulse signal and supplies the first pulse signal to the first counter, and a second detection circuit that generates a second pulse signal and supplies the second pulse signal to the second counter, the first selection transistor opens and closes a path between one end of the first avalanche photodiode and the first detection circuit, the second selection transistor opens and closes a path between one end of the second avalanche photodiode and the second detection circuit, there are further disposed, on the logic substrate, a third selection transistor that opens and closes a path between one end of the first avalanche photodiode and the second detection circuit, and a fourth selection transistor that opens and closes a path between one end of the second avalanche photodiode and the second detection circuit, and the control circuit further controls voltage of each gate of the third and fourth selection transistors. ### Claim 10 (depends on 7) The imaging device according to claim 7, wherein the control circuit includes an on-state voltage generation unit that generates a voltage according to a predetermined reference voltage as an on-state voltage, and a selector that selects either an off-state voltage different from the on-state voltage or the on-state voltage, and supplies the selected voltage to the gate. ### Claim 11 A solid-state image sensor comprising: a light-receiving substrate on which a plurality of avalanche photodiodes is disposed, each of the avalanche photodiodes generating a current corresponding to incidence of a photon; and a logic substrate on which a counter is disposed, the counter counting a number of the photons on a basis of the current of a selected avalanche photodiode among the plurality of avalanche photodiodes, wherein the plurality of avalanche photodiodes includes first and second avalanche photodiodes, there is further disposed, on the logic substrate, a detection circuit that generates a pulse signal on a basis of a voltage according to the current and outputs the pulse signal to the counter, and there are further disposed, on the light-receiving substrate, a first selection transistor that opens and closes a path between one end of the first avalanche photodiode and the detection circuit, a second selection transistor that opens and closes a path between one end of the second avalanche photodiode and the detection circuit, and a clip transistor that fixes a potential of the one end to a predetermined value. ### Claim 12 (depends on 11) The solid-state image sensor according to claim 11, wherein there are further disposed, on the light-receiving substrate, a first resistor that is inserted between one end of the first avalanche photodiode and the first selection transistor, and a second resistor that is inserted between one end of the second avalanche photodiode and the second selection transistor. ### Claim 13 (depends on 11) An imaging device comprising the solid-state image sensor according to claim 11. ### Claim 14 A solid-state image sensor comprising: a light-receiving substrate on which a plurality of avalanche photodiodes is disposed, each of the avalanche photodiodes generating a current corresponding to incidence of a photon; a logic substrate on which a counter is disposed, the counter counting a number of the photons on a basis of the current of a selected avalanche photodiode among the plurality of avalanche photodiodes; and an intermediate substrate, wherein the plurality of avalanche photodiodes includes first and second avalanche photodiodes, and there are further disposed, on the intermediate substrate, a first selection transistor that opens and closes a path between one end of the first avalanche photodiode and a common node, and a second selection transistor that opens and closes a path between one end of the second avalanche photodiode and the common node. ### Claim 15 (depends on 14) The solid-state image sensor according to claim 14, wherein there is further disposed, on the logic substrate, a detection circuit that generates a pulse signal on a basis of a potential of the common node and outputs the pulse signal to the counter, and there is further disposed, on the intermediate substrate, a clip transistor that fixes a potential of the one end to a predetermined value. ### Claim 16 (depends on 14) The solid-state image sensor according to claim 14, wherein there is further disposed, on the intermediate substrate, a detection circuit that generates a pulse signal on a basis of a potential of the common node and outputs the pulse signal to the counter. ### Claim 17 (depends on 14) The solid-state image sensor according to claim 14, wherein there are further disposed, on the light-receiving substrate, a first resistor that is inserted between one end of the first avalanche photodiode and the first selection transistor, and a second resistor that is inserted between one end of the second avalanche photodiode and the second selection transistor. ### Claim 18 (depends on 17) The solid-state image sensor according to claim 17, wherein there is further disposed, on the logic substrate, a detection circuit that generates a pulse signal on a basis of a potential of the common node and outputs the pulse signal to the counter. ### Claim 19 (depends on 17) The solid-state image sensor according to claim 17, wherein there is further disposed, on the intermediate substrate, a detection circuit that generates a pulse signal on a basis of a potential of the common node and outputs the pulse signal to the counter. ### Claim 20 (depends on 14) An imaging device comprising the solid-state image sensor according to claim 14.