# US 12,191,849 B2 · High-voltage power supply device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,191,849 B2 - Document ID: US12191849B2 - Status: Granted - Kind: B2 - Application number: 17/951,700 - Filed: 2022-09-23 - Published: 2023-06-01 - Granted: 2025-01-07 - Earliest claimed: 2021-11-26 - Assignees: Shimadzu Corporation - Applicants: Shimadzu Corporation - Inventors: Haruki Osa - Web page: https://patentgrep.com/patent/US12191849B2 ## CPC - H01J 49/022: {Circuit arrangements, e.g. for generating deviation currents or voltages (regulating electric or magnetic variables in general, e.g. current, magnetic field G05F); Components associated with high voltage supply (high voltage supply per se H02M)} - H03K 17/567: Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT - H01F 19/04: Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range (resonant circuits H03H) - H01F 30/16: Toroidal transformers - H02M 1/08: Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters - H02M 3/158: including plural semiconductor devices as final control devices for a single load - H02M 7/217: using semiconductor devices only - H03K 17/063: {in field-effect transistor switches} - H01J 49/10: Ion sources; Ion guns - H03K 17/102: {in field-effect transistor switches} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P) ## Abstract A high-voltage power supply device includes a voltage generation unit for outputting a DC high-voltage, a switching unit using a semiconductor switching element, the switching unit being configured to output an output voltage by the voltage generation unit to a voltage output terminal in a conduction state, a driver for driving a control terminal of the semiconductor switching element, and a controller for controlling the switching unit via the driver. The driver includes a high-frequency transformer provided with primary and secondary windings, a distribution of a stray capacitance per number of unit turns of the primary winding between the primary and secondary windings in an extension direction of the primary winding being symmetrical to a midpoint of the primary winding, a rectifier for rectifying an AC current induced in the secondary winding, and a balanced output type high-frequency excitation unit for exciting the primary winding differentially. ## Claims ### Claim 1 A high-voltage power supply device comprising: a voltage generation unit having a first voltage generation unit configured to output a DC high-voltage of positive polarity and a second voltage generation unit configured to output a DC high-voltage of negative polarity; a switching unit using a semiconductor switching element, the switching unit including a first switching unit configured to output the DC high-voltage of positive polarity to a voltage output terminal when the first switching unit is in a conduction state and a second switching unit configured to output the DC high-voltage of negative polarity to the voltage output terminal when the second switching unit is in a conduction state; a driver configured to drive a control terminal of the semiconductor switching element in the switching unit; and a controller configured to control conduction/non-conduction of the first switching unit and the second switching unit via the driver, wherein the driver includes: a high-frequency transformer provided with a primary winding and a secondary winding, a distribution of a stray capacitance per number of unit turns of the primary winding between the primary winding and the secondary winding in an extension direction of the primary winding being symmetrical to a midpoint of the primary winding; a rectifier configured to rectify an AC current induced in the secondary winding of the high-frequency transformer; and a balanced output type high-frequency excitation unit configured to excite the primary winding of the high-frequency transformer differentially. ### Claim 2 (depends on 1) The high-voltage power supply device as recited in claim 1, wherein the switching unit is composed of a plurality of semiconductor switching elements connected in series, and wherein the driver includes a plurality of circuits for driving corresponding control terminals of the plurality of semiconductor switching elements. ### Claim 3 (depends on 1) The high-voltage power supply device as recited in claim 1, wherein the high-frequency transformer includes a core of a toroidal shape, a primary winding penetrating through a central opening of the core, and a secondary winding wound around the core. ### Claim 4 (depends on 2) The high-voltage power supply device as recited in claim 2, wherein the high-frequency transformer includes a core of a toroidal shape, a primary winding penetrating through a central opening of the core, and a secondary winding wound around the core. ### Claim 5 (depends on 2) The high-voltage power supply device as recited in claim 2, wherein the high-frequency transformer includes a core of a toroidal shape, a primary winding penetrating through a central opening of the core, and a secondary winding wound around the core, wherein a plurality of primary windings of a plurality of high-frequency transformers respectively corresponding to the plurality of semiconductor switching elements are connected in series, the plurality of primary windings being included in the drivers for driving the corresponding plurality of semiconductor switching elements, and wherein the plurality of primary windings connected in series are excited by the high-frequency excitation unit differentially. ### Claim 6 (depends on 1) The high-voltage power supply device as recited in claim 1, wherein the primary winding and the secondary winding of the high-frequency transformer are electrically insulated by an insulating coating of the primary winding. ### Claim 7 (depends on 1) The high-voltage power supply device as recited in claim 1, wherein the semiconductor switching element is either one of a MOSFET and an IGBT. ### Claim 8 (depends on 2) The high-voltage power supply device as recited in claim 2, wherein the semiconductor switching element is either one of a MOSFET and an IGBT. ### Claim 9 (depends on 3) The high-voltage power supply device as recited in claim 3, wherein the semiconductor switching element is either one of a MOSFET and an IGBT. ### Claim 10 (depends on 4) The high-voltage power supply device as recited in claim 4, wherein the semiconductor switching element is either one of a MOSFET and an IGBT. ### Claim 11 (depends on 5) The high-voltage power supply device as recited in claim 5, wherein the semiconductor switching element is either one of a MOSFET and an IGBT. ### Claim 12 (depends on 6) The high-voltage power supply device as recited in claim 6, wherein the semiconductor switching element is either one of a MOSFET and an IGBT.