# US 12,191,819 B2 · Hybrid input LNA RF frontend architecture

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- Number: US 12,191,819 B2
- Document ID: US12191819B2
- Status: Granted
- Kind: B2
- Application number: 17/523,584
- Filed: 2021-11-10
- Published: 2023-05-11
- Granted: 2025-01-07
- Earliest claimed: 2021-11-10
- Assignees: Murata Manufacturing Co., Ltd.
- Applicants: Murata Manufacturing Co., Ltd.
- Inventors: Emre Ayranci; Miles Sanner
- Web page: https://patentgrep.com/patent/US12191819B2

## CPC

- H03F 1/223: {with MOSFET's}
- H03F 3/19: with semiconductor devices only
- H03F 1/565: {using inductive elements}
- H03F 3/193: with field-effect devices (H03F3/195 takes precedence)
- H03F 3/68: Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics {(power amplifiers using a combination of several semiconductor amplifiers H03F3/211; combinations of amplifiers using coupling networks with distributed constants H03F3/602)}
- H03F 3/72: Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F 2200/165: A filter circuit coupled to the input of an amplifier
- H03F 2200/222: A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
- H03F 2200/294: the amplifier being a low noise amplifier [LNA]
- H03F 2200/451: the amplifier being a radio frequency amplifier
- H03F: AMPLIFIERS

## Abstract

Methods and devices for realizing RF processing paths associated to different frequency bands are presented. According to one aspect, the RF processing paths are provided by a hybrid input LNA RF frontend that includes RF processing paths that are dedicated to specific frequency bands and RF processing paths that are shared between several frequency bands. Sharing of the RF processing paths is provided by an input combiner network and/or a multi-input cascode amplifier that includes a cascode transistor that is coupled to at least two input transistors. Further presented in a toolkit that includes circuit blocks that can be used in specific combinations to customize the RF processing paths to achieve specific performance or cost optimization. A decision tree based on performance and cost priorities assigned to each of the frequency bands is used to provide the specific combinations.

## Claims

### Claim 1

A multi-input multi-band low noise amplifier (LNA) comprising:
a dedicated RF processing path comprising a dedicated cascode amplifier comprising a dedicated input transistor and a dedicated output cascode transistor that is coupled to a high side node;
a multi-input shared cascode amplifier comprising a plurality of input transistors and a shared output cascode transistor coupled to the plurality of input transistors, the shared output cascode transistor being coupled to the high side node and the high side node being coupled to a supply voltage through a tunable inductor;
a shared RF processing path for processing of at least two respective frequency bands, the shared RF processing path comprising an input band selection switch configured to selectively couple an input RF signal of each of the at least two respective frequency bands to a shared input transistor of the plurality of input transistors;
wherein the high side node is further coupled to the supply voltage through at least a resistor or a capacitor.

### Claim 2 (depends on 1)

The multi-input multi-band low noise amplifier (LNA) of claim 1, wherein:
the dedicated RF processing path further comprises a dedicated input matching circuit coupled to the dedicated input transistor of the dedicated cascode amplifier, and
the shared RF processing path further comprises a shared input matching circuit coupled between the input band selection switch and the shared input transistor of the multi-input shared cascode amplifier.

### Claim 3 (depends on 1)

The multi-input multi-band low noise amplifier (LNA) of claim 1, further comprising:
an additional RF processing path for processing of a respective frequency band, the additional RF processing path comprising:
a dedicated input matching circuit coupled to a dedicated input transistor of the plurality of input transistors of the multi-input shared cascode amplifier.

### Claim 4 (depends on 1)

The multi-input multi-band low noise amplifier (LNA) of claim 1, wherein:
the dedicated output cascode transistor is unconditionally coupled to the high side node, and
the shared output cascode transistor is selectively coupled to the high side node via a switch.

### Claim 5 (depends on 3)

The multi-input multi-band low noise amplifier (LNA) of claim 3, wherein:
processing of the respective frequency bands via the dedicated, shared and additional RF processing paths is based on a priori assignment of a performance priority to each band of said frequency bands.

### Claim 6 (depends on 5)

The multi-input multi-band low noise amplifier (LNA) of claim 5, wherein:
the a priori assignment of the performance priority to each band of the said frequency bands is based on at least one of:
insertion loss of a band filter used to process a corresponding RF signal,
frequency spectrum of the each band, or
a target sensitivity performance for the each band.

### Claim 7 (depends on 5)

The multi-input multi-band low noise amplifier (LNA) of claim 5, wherein:
the RF processing performance is based on at least one of:
an insertion loss performance,
a sensitivity performance,
a linearity performance, or
a power consumption performance.

### Claim 8 (depends on 7)

The multi-input multi-band low noise amplifier (LNA) of claim 7, wherein:
the a priori assignment of the performance priority is configured to equalize an RF processing performance of the each band through the multi-input multi-band LNA with a reduced cost and physical size of said LNA.

### Claim 9 (depends on 7)

The multi-input multi-band low noise amplifier (LNA) of claim 7, wherein:
the a priori assignment of the performance priority is configured to equalize an RF sensitivity performance of said frequency bands through the multi-input multi-band LNA with a reduced cost and physical size of said LNA.

### Claim 10 (depends on 1)

The multi-input multi-band low noise amplifier (LNA) of claim 1, wherein:
a source of the dedicated output cascode transistor is coupled to a drain of the dedicated input transistor of the dedicated cascode amplifier, and
a source of the shared output cascode transistor is coupled to respective drains of the plurality of input transistors of the multi-input shared cascode amplifier.

### Claim 11 (depends on 10)

The multi-input multi-band low noise amplifier (LNA) of claim 10, wherein:
respective sources of the dedicated input transistor of the dedicated cascode transistor and of the plurality of input transistors of the multi-input shared cascode amplifier are coupled to a low side node.

### Claim 12 (depends on 11)

The multi-input multi-band low noise amplifier (LNA) of claim 11, wherein:
the low side node is coupled to a reference ground through a degeneration inductor.

### Claim 13 (depends on 12)

The multi-input multi-band low noise amplifier (LNA) of claim 12, wherein:
the degeneration inductor is tunable.

### Claim 14 (depends on 1)

The multi-input multi-band low noise amplifier (LNA) of claim 1, wherein:
the high side node is further coupled to a load through an output matching circuit.

### Claim 15 (depends on 14)

The multi-input multi-band low noise amplifier (LNA) of claim 14, wherein:
the output matching circuit comprises at least one capacitor.

### Claim 16 (depends on 15)

The multi-input multi-band low noise amplifier (LNA) of claim 15, wherein:
the at least one capacitor is tunable.

### Claim 17 (depends on 2)

The multi-input multi-band low noise amplifier (LNA) of claim 2, wherein:
each of the dedicated input matching circuit and the shared input matching circuit comprises an inductor.

### Claim 18 (depends on 17)

The multi-input multi-band low noise amplifier (LNA) of claim 17, wherein:
the inductor of the each of the dedicated input matching circuit and the shared input matching circuit is a fixed inductance surface mount device.

### Claim 19 (depends on 3)

The multi-input multi-band low noise amplifier (LNA) of claim 3, wherein:
the dedicated input matching circuit of the additional RF processing path comprises an inductor.

### Claim 20 (depends on 19)

The multi-input multi-band low noise amplifier (LNA) of claim 19, wherein:
the inductor of the dedicated input matching circuit of the additional RF processing path is a surface mount device with tunable inductance.

### Claim 21 (depends on 19)

The multi-input multi-band low noise amplifier (LNA) of claim 19, wherein:
the inductor of the dedicated input matching circuit of the additional RF processing path is an in-circuit inductor.