# US 12,191,626 B1 · Vertically emitting laser devices and chip-scale-package laser devices and laser-based, white light emitting devices

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- Number: US 12,191,626 B1
- Document ID: US12191626B1
- Status: Granted
- Kind: B1
- Application number: 17/444,273
- Filed: 2021-08-02
- Granted: 2025-01-07
- Earliest claimed: 2020-07-31
- Assignees: KYOCERA SLD Laser, Inc.
- Applicants: KYOCERA SLD Laser, Inc.
- Inventors: Melvin McLaurin
- Web page: https://patentgrep.com/patent/US12191626B1

## CPC

- H01S 5/0217: {Removal of the substrate}
- H01S 5/0087: {for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials}
- H01S 5/0215: {Bonding to the substrate}
- H01S 5/0216: {using an intermediate compound, e.g. a glue or solder}
- H01S 5/02255: using beam deflecting elements
- H01S 5/028: Coatings {; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers}
- H01S 5/18305: {with emission through the substrate, i.e. bottom emission}
- H01S 5/18344: {characterized by the mesa, e.g. dimensions or shape of the mesa}
- H01S 5/18369: {based on dielectric materials}
- H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
- H01S 5/423: {having a vertical cavity}
- H10D 8/043: {of planar diodes}
- H10D 8/051: {of Schottky diodes}
- H10D 8/411: {PN diodes having planar bodies}
- H10D 8/422: {PN diodes having the PN junctions in mesas}
- H10D 8/60: Schottky-barrier diodes
- H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT}
- H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 84/05: using Group III-V technology
- H10H 20/018: {Bonding of wafers}
- H10H 20/821: of the light-emitting regions, e.g. non-planar junctions
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10P 95/112: {leaving a reusable substrate, e.g. epitaxial lift off}
- H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}
- H10D 62/149: {Source or drain regions of field-effect devices}
- H10D 62/343: {Gate regions of field-effect devices having PN junction gates}
- H10D 64/256: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)}
- H10D 64/513: {within recesses in the substrate, e.g. trench gates, groove gates or buried gates}
- H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors}
- H10D 84/82: of only field-effect components
- H10H 20/0137: {the light-emitting regions comprising nitride materials}
- H10H 20/0364: {of interconnections}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Horizontal Cavity Surface Emitting Lasers (HCSELs) with angled facets may be fabricated by a chemical or physical etching process, and the epitaxially grown semiconductor device layers may be transferred through a selective etch and release process from their original epitaxial substrate to a carrier wafer.

## Claims

### Claim 1

A method for manufacturing a semiconductor light emitting device, the method comprising:
providing a gallium and nitrogen containing substrate having a surface region;
forming a release material overlying the surface region;
forming a gallium and nitrogen containing epitaxial material overlying the release material, the epitaxial material comprising at least an intrinsic-type or unintentionally doped gallium and nitrogen containing region or at least an n-type gallium and nitrogen containing region or at least a p-type gallium and nitrogen containing region or at least a combination of one or more n-type gallium and nitrogen containing regions, p-type gallium and nitrogen containing regions, or unintentionally doped gallium and nitrogen containing regions;
patterning the epitaxial material and the release material to form mesas separated by a first pitch and arranged in an array, each mesa corresponding to at least one semiconductor device;
forming a bonding media overlying at least a portion of the mesas;
bonding the bonding media to a carrier wafer to form bonded structures;
releasing the bonded structures by at least partially removing the release material to transfer a plurality of mesas to the carrier wafer, wherein each pair of transferred mesas is separated by a second pitch that is greater than the first pitch; and
processing at least one of the plurality of mesas to form the semiconductor light emitting device having a cavity with facets on each end, at least one of the facets being an angled facet that is at an angle relative to the other facet, the angled facet configured to provide an intra-cavity beam deflector that alters a path of a light beam within the cavity to facilitate emission of the light beam from the cavity.

### Claim 2 (depends on 1)

The method of claim 1 wherein the angled facet is formed before the bonding step.

### Claim 3 (depends on 1)

The method of claim 1 wherein the angled facet is formed after the bonding step.

### Claim 4 (depends on 1)

The method of claim 1 wherein the facets on each end of the cavity are both angled facets, and one of the angled facets has a reentrant profile and the other angled facet has a convex profile.

### Claim 5 (depends on 1)

The method of claim 1 wherein the semiconductor light emitting device is a surface emitting device configured to emit a laser beam in a direction perpendicular to a length of the cavity.

### Claim 6 (depends on 1)

The method of claim 1 wherein the semiconductor light emitting device is configured to emit a laser beam in an upward direction away from the carrier wafer.

### Claim 7 (depends on 1)

The method of claim 1 wherein the semiconductor light emitting device is configured to emit a laser beam downward toward the carrier wafer.

### Claim 8 (depends on 1)

The method of claim 1 wherein the angled facet is formed before the bonding step, and the method further comprises forming an anti-reflective coating on an exit aperture of the cavity before the bonding step.

### Claim 9 (depends on 1)

The method of claim 1 wherein the angled facet is formed after the bonding step, and the method further comprises forming an anti-reflective coating on an exit aperture of the cavity after the bonding step.

### Claim 10 (depends on 1)

The method of claim 1 wherein processing the at least one of the plurality of mesas to form the semiconductor light emitting device includes forming an exit aperture adjacent to each of the facets.

### Claim 11

A method for manufacturing a chip-scale package, the method comprising:
providing a gallium and nitrogen containing substrate having a surface region;
forming a release material overlying the surface region;
forming a gallium and nitrogen containing epitaxial material overlying the release material, the epitaxial material comprising at least an intrinsic-type or unintentionally doped gallium and nitrogen containing region or at least an n-type gallium and nitrogen containing region or at least a p-type gallium and nitrogen containing region or at least a combination of one or more n-type gallium and nitrogen containing regions, p-type gallium and nitrogen containing regions, or unintentionally doped gallium and nitrogen containing regions;
patterning the epitaxial material and the release material to form mesas separated by a first pitch and arranged in an array, each mesa corresponding to at least one semiconductor device;
forming a bonding media overlying at least a portion of the mesas;
bonding the bonding media to a carrier wafer to form bonded structures;
releasing the bonded structures by at least partially removing the release material to transfer a plurality of mesas to the carrier wafer, wherein each pair of transferred mesas is separated by a second pitch that is greater than the first pitch;
processing at least one of the plurality of mesas to form a semiconductor light emitting device having a cavity with facets on each end, at least one of the facets being an angled facet configured to provide an intra-cavity beam deflector that alters a path of a laser light within the cavity to facilitate emission of the laser light from the cavity;
providing a wavelength converting member configured to absorb the laser light emitted from the cavity and down convert the absorbed laser light, wherein the down converted laser light mixes with scattered laser light to provide white light from the wavelength converting member; and
encapsulating facet regions of the semiconductor light emitting device with a coating material to provide the chip-scale package.

### Claim 12 (depends on 11)

The method of claim 11 wherein the carrier wafer provides the wavelength converting member, and the angled facet is configured to direct the laser light toward the carrier wafer.

### Claim 13 (depends on 11)

The method of claim 11 wherein the wavelength converting member overlies the semiconductor light emitting device, and the angled facet is configured to direct the laser light upward toward the wavelength converting member.

### Claim 14 (depends on 11)

The method of claim 11 further comprising forming a reflective coating on a surface of the wavelength converting member.