# US 12,191,403 B2 · Method of manufacturing merged PiN Schottky (MPS) diode

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- Number: US 12,191,403 B2
- Document ID: US12191403B2
- Status: Granted
- Kind: B2
- Application number: 18/619,182
- Filed: 2024-03-28
- Published: 2024-07-11
- Granted: 2025-01-07
- Earliest claimed: 2022-03-31
- Assignees: LEAP Semiconductor Corp.
- Applicants: LEAP Semiconductor Corp.
- Inventors: Wei-Fan Chen; Kuo-Chi Tsai
- Web page: https://patentgrep.com/patent/US12191403B2

## CPC

- H10D 8/60: Schottky-barrier diodes
- H10D 8/051: {of Schottky diodes}
- H10D 8/50: PIN diodes
- H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}
- H10D 62/107: {Buried supplementary regions, e.g. buried guard rings (multi-RESURF H10D62/111)}
- H10D 62/8325: {Silicon carbide}
- H10D 64/23: Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A merged PiN Schottky (MPS) diode includes a substrate, a first epitaxial layer of a first conductivity type, doped regions of a second conductivity type, a second epitaxial layer of the first conductivity type, and a Schottky metal layer. The first epitaxial layer is disposed on the first surface of the substrate. The doped regions are disposed in a surface of the first epitaxial layer, wherein the doped regions consist of first portions and second portions, the first portions are electrically floating, and the second portions are electrically connected to a top metal. The second epitaxial layer is disposed on the surface of the first epitaxial layer, wherein trenches are formed in the second epitaxial layer to expose the second portions of the doped regions. The Schottky metal layer is conformally deposited on the second epitaxial layer and the exposed second portions of the doped regions.

## Claims

### Claim 1

A method of manufacturing a merged PiN Schottky (MPS) diode, comprising:
forming a first epitaxial layer of a first conductivity type on a first surface of a substrate;
forming a plurality of doped regions of a second conductivity type in a surface of the first epitaxial layer, wherein the doped regions consist of first portions and second portions;
forming a second epitaxial layer of the first conductivity type on the surface of the first epitaxial layer;
forming a plurality of trenches in the second epitaxial layer to expose the second portions of the doped regions; and
conformally depositing a Schottky metal layer on the second epitaxial layer and the second portions of the doped regions, wherein the first portions are electrically floating, and the second portions are electrically connected to a top metal.

### Claim 2 (depends on 1)

The method of manufacturing the MPS diode of claim 1, wherein the first portions and the second portions are alternately arranged along a direction perpendicular to an extension direction of the trenches.

### Claim 3 (depends on 1)

The method of manufacturing the MPS diode of claim 1, wherein a doping concentration of the second epitaxial layer is equal to or higher than that of the first epitaxial layer.

### Claim 4 (depends on 1)

The method of manufacturing the MPS diode of claim 1, wherein a doping concentration of the second epitaxial layer is 1.2 times to 3 times that of the first epitaxial layer.

### Claim 5 (depends on 1)

The method of manufacturing the MPS diode of claim 1, wherein after conformally depositing the Schottky metal layer, further comprising forming the top metal layer on the Schottky metal layer to fill the trenches.

### Claim 6 (depends on 5)

The method of manufacturing the MPS diode of claim 5, wherein after forming the top metal layer, further comprising forming a backside metal disposed on a second surface of the substrate, and the second surface is opposite to the first surface.