Method of manufacturing a semiconductor transducer device with multilayer diaphragm and semiconductor transducer device with multilayer diaphragm
AssigneeSciosense B.V.
InventorsAlessandro Faes, Jörg Siegert, Willem Frederik Adrianus Besling, Remco Henricus Wilhelmus Pijnenburg
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Abstract
In an embodiment a method includes providing a semiconductor body, forming a sacrificial layer above a surface of the semiconductor body, applying a diaphragm on the sacrificial layer and removing the sacrificial layer by introducing an etchant into openings of the diaphragm, wherein applying the diaphragm comprises applying a first layer, reducing a roughness of a surface of the first layer facing away from the semiconductor body thereby providing a processed surface, and patterning and structuring the first layer to form the openings.
Claims10
A method for producing a semiconductor transducer device, the method comprising:
- providing a semiconductor body;
- forming a sacrificial layer above a surface of the semiconductor body;
- applying a diaphragm on the sacrificial layer;
- and
- removing the sacrificial layer by introducing an etchant into openings of the diaphragm,
- wherein applying the diaphragm comprises:
- applying a first layer comprising tungsten, wherein the first layer is a layer of a finished diaphragm with a largest thickness,
- reducing a roughness of a surface of the first layer facing away from the semiconductor body thereby providing a processed surface, and
- patterning and structuring the first layer to form the openings,
- wherein applying the diaphragm comprises applying a third layer comprising at least one of titanium or titanium nitride,
- wherein the first layer is applied on a surface of the third layer facing away from the semiconductor body, and
- wherein the processed surface has a roughness profile with an arithmetic average between 2 nm and 10 nm inclusive.
A method of producing a semiconductor transducer device, the method comprising:
- providing a semiconductor body;
- forming a sacrificial layer above a surface of the semiconductor body;
- applying a diaphragm on the sacrificial layer;
- and
- removing the sacrificial layer by introducing an etchant into openings of the diaphragm,
- wherein applying the diaphragm comprises:
- applying a third layer comprising at least one of titanium or titanium nitride,
- applying a first layer comprising tungsten, wherein the first layer is a layer of a finished diaphragm with a largest thickness, and wherein the first layer is applied on a surface of the third layer facing away from the semiconductor body,
- reducing a roughness of a surface of the first layer facing away from the semiconductor body thereby providing a processed surface, wherein the processed surface has a roughness profile with arithmetic average between 2 nm and 10 nm inclusive, and
- patterning and structuring the first layer to form the openings.
Dependencies are inferred from the claim text.