# US 12,191,399 B2 · Semiconductor device and manufacturing method thereof

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,191,399 B2
- Document ID: US12191399B2
- Status: Granted
- Kind: B2
- Application number: 18/136,431
- Filed: 2023-04-19
- Published: 2023-11-09
- Granted: 2025-01-07
- Earliest claimed: 2015-04-15
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Tetsuhiro Tanaka; Mitsuhiro Ichijo; Toshiya Endo; Akihisa Shimomura; Yuji Egi; Sachiaki Tezuka; Shunpei Yamazaki
- Web page: https://patentgrep.com/patent/US12191399B2

## CPC

- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6704: {having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device}
- H10D 30/673: {characterised by the shapes, relative sizes or dispositions of the gate electrodes}
- H10D 30/6734: {having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs}
- H10D 30/6739: {Conductor-insulator-semiconductor electrodes}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

## Claims

### Claim 1

A semiconductor device comprising a first transistor, a second transistor, and a capacitor, the semiconductor device comprising:
a first insulating film over a substrate;
a first semiconductor layer including silicon over the first insulating film;
a second insulating film over the first semiconductor layer;
a first conductive layer over the second insulating film;
a third insulating film over the first conductive layer;
a second semiconductor layer including an oxide semiconductor over the third insulating film;
a fourth insulating film over the second semiconductor layer;
a second conductive layer over the fourth insulating film; and
a third conductive layer below the second semiconductor layer,
wherein the first conductive layer is configured to be a gate electrode of the first transistor,
wherein the second conductive layer is configured to be a first gate electrode of the second transistor,
wherein the third conductive layer is configured to be a second gate electrode of the second transistor,
wherein the first semiconductor layer is in electrical contact with the second semiconductor layer through a fourth conductive layer,
wherein the fourth conductive layer is in contact with one of a source and a drain of the second semiconductor layer,
wherein the fourth conductive layer has a region provided over the second conductive layer,
wherein a fifth conductive layer is in contact with the other of the source and the drain of the second semiconductor layer,
wherein the fifth conductive layer is configured to be one electrode of the capacitor, and
wherein the second semiconductor layer overlaps the first semiconductor layer in a region where the first conductive layer and the third conductive layer do not overlap each other.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the second semiconductor layer includes indium, gallium and zinc.

### Claim 3

A semiconductor device comprising a first transistor, a second transistor, and a capacitor, the semiconductor device comprising:
a first insulating film over a substrate;
a first semiconductor layer including silicon over the first insulating film;
a second insulating film over the first semiconductor layer;
a first conductive layer over the second insulating film;
a third insulating film over the first conductive layer;
a second semiconductor layer including an oxide semiconductor over the third insulating film;
a fourth insulating film over the second semiconductor layer;
a second conductive layer over the fourth insulating film;
a fifth insulating film over the second conductive layer; and
a third conductive layer below the second semiconductor layer,
wherein the first conductive layer is configured to be a gate electrode of the first transistor,
wherein the second conductive layer is configured to be a first gate electrode of the second transistor,
wherein the third conductive layer is configured to be a second gate electrode of the second transistor,
wherein the first semiconductor layer is in electrical contact with the second semiconductor layer through a fourth conductive layer,
wherein the fourth conductive layer is in contact with one of a source and a drain of the second semiconductor layer,
wherein the fourth conductive layer has a region provided in an opening provided in the fifth insulating film,
wherein a fifth conductive layer is in contact with the other of the source and the drain of the second semiconductor layer,
wherein the fifth conductive layer is configured to be one electrode of the capacitor, and
wherein the second semiconductor layer overlaps the first semiconductor layer in a region where the first conductive layer and the third conductive layer do not overlap each other.

### Claim 4 (depends on 3)

The semiconductor device according to claim 3, wherein the second semiconductor layer includes indium, gallium and zinc.