# US 12,191,392 B2 · Semiconductor device including two-dimensional material

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- Number: US 12,191,392 B2
- Document ID: US12191392B2
- Status: Granted
- Kind: B2
- Application number: 17/505,955
- Filed: 2021-10-20
- Published: 2022-07-28
- Granted: 2025-01-07
- Earliest claimed: 2021-01-25
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Van Luan Nguyen; Minsu Seol; Eunkyu Lee; Junyoung Kwon; Hyeonjin Shin; Minseok Yoo
- Web page: https://patentgrep.com/patent/US12191392B2

## CPC

- H10D 30/6704: {having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device}
- H10D 30/481: {FETs having two-dimensional material channels, e.g. transition metal dichalcogenide [TMD] FETs}
- H10D 30/675: {Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 62/80: characterised by the materials
- H10D 62/882: {Graphene}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device according to an embodiment may include a substrate, an adhesive layer, and a semiconductor layer. The semiconductor layer includes a 2D material having a layered structure. The adhesive layer is interposed between the substrate and the semiconductor layer, and has adhesiveness to a 2D material.

## Claims

### Claim 1

A semiconductor device comprising:
a substrate;
a semiconductor layer comprising a two-dimensional (2D) material having a layered structure;
an adhesive layer adhering the substrate to the semiconductor layer; and
an electrode spaced apart from the semiconductor layer such that an insulator separates the electrode and the semiconductor layer and such that the electrode corresponds to a channel region in the semiconductor layer, and
wherein an adhesive energy between the adhesive layer and the 2D material is two or more times greater than an adhesive energy between the substrate and the 2D material.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the adhesive layer comprises a metal thin film.

### Claim 3 (depends on 2)

The semiconductor device of claim 2, wherein the metal thin film comprises at least one of copper (Cu), nickel (Ni), gold (Au), or platinum (PT).

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein the adhesive layer comprises an insulating material layer.

### Claim 5 (depends on 4)

The semiconductor device of claim 4, wherein the insulating material layer comprises a metal oxide layer.

### Claim 6 (depends on 5)

The semiconductor device of claim 5, wherein the metal oxide layer comprises TiO2.

### Claim 7 (depends on 4)

The semiconductor device of claim 4, wherein the insulating material layer comprises a self-assembled monolayer.

### Claim 8 (depends on 7)

The semiconductor device of claim 7, wherein the self-assembled monolayer comprises a compound having at least one of a —NH2 functional group or a —SH2 functional group.

### Claim 9 (depends on 1)

The semiconductor device of claim 1, wherein the 2D material comprises at least one of graphene, black phosphorous, or a transition-metal dichalcogenide.

### Claim 10 (depends on 1)

The semiconductor device of claim 1, wherein the 2D material comprises a transition-metal element and a chalcogen element.

### Claim 11 (depends on 10)

The semiconductor device of claim 10, wherein
the adhesive layer comprises a self-assembled monolayer, and
the self-assembled monolayer comprises a compound having at least one of a —NH2 functional group or a —SH2 functional group.

### Claim 12 (depends on 1)

The semiconductor device of claim 1, further comprising:
a first electrode in contact with the semiconductor layer; and
a second electrode in contact with the semiconductor layer and separated from the first electrode, and
wherein the electrode corresponding to the channel region is between the first and second electrodes.

### Claim 13 (depends on 11)

The semiconductor device of claim 11, wherein the 2D material comprises a transition-metal dichalcogenide.

### Claim 14

A semiconductor device comprising:
a substrate;
a channel layer including a 2D material;
an adhesive layer adhering the substrate to the channel layer, wherein an adhesive energy between the adhesive layer and the 2D material is two or more times greater than an adhesive energy between the substrate and the 2D material;
a source electrode in contact with the channel layer;
a drain electrode in contact with the channel layer and separated from the source electrode; and
a gate electrode separated from the channel layer.

### Claim 15 (depends on 14)

The semiconductor device of claim 14, wherein the channel layer has a layered structure.

### Claim 16 (depends on 15)

The semiconductor device of claim 15, wherein the 2D material comprises at least one of graphene, black phosphorus, or a transition-metal dichalcogenide.

### Claim 17 (depends on 16)

The semiconductor device of claim 16, wherein the adhesive layer comprises at least one of copper (Cu), nickel (Ni), gold (Au), or platinum (PT).

### Claim 18 (depends on 16)

The semiconductor device of claim 16, wherein the adhesive layer comprises TiO2.

### Claim 19 (depends on 16)

The semiconductor device of claim 16, wherein the adhesive layer comprises a self-assembled monolayer.

### Claim 20 (depends on 19)

The semiconductor device of claim 19, wherein the self-assembled monolayer comprises a compound including at least one of a —NH2 functional group or a —SH2 functional group.