# US 12,191,391 B2 · Semiconductor device and method for fabricating the same

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- Number: US 12,191,391 B2
- Document ID: US12191391B2
- Status: Granted
- Kind: B2
- Application number: 18/244,892
- Filed: 2023-09-11
- Published: 2023-12-28
- Granted: 2025-01-07
- Earliest claimed: 2020-12-04
- Assignees: United Microelectronics Corp.
- Applicants: United Microelectronics Corp.
- Inventors: Shou-Wan Huang; Chun-Hsien Lin
- Web page: https://patentgrep.com/patent/US12191391B2

## CPC

- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 84/0177: {the gate conductors having different materials or different implants}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10D 84/0188: {Manufacturing their isolation regions}
- H10D 84/0193: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/8314: {the IGFETs characterised by having gate insulating layers with different properties}
- H10D 84/834: {comprising FinFETs}
- H10D 84/853: {comprising FinFETs}
- H10D 88/00: Three-dimensional [3D] integrated devices
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device includes a substrate having a first region and a second region, a first fin-shaped structure extending along a first direction on the first region, a double diffusion break (DDB) structure extending along a second direction to divide the first fin-shaped structure into a first portion and a second portion, and a first gate structure and a second gate structure extending along the second direction on the DDB structure.

## Claims

### Claim 1

A semiconductor device, comprising:
a substrate having a first region and a second region;
a first fin-shaped structure extending along a first direction on the first region;
a double diffusion break (DDB) structure extending along a second direction to divide the first fin-shaped structure into a first portion and a second portion;
a first gate structure and a second gate structure extending along the second direction on the DDB structure; and
a protrusion on the DDB structure and between the first gate structure and the second gate structure, wherein the protrusion and the DDB structure are made of same material.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the first gate structure overlaps the first portion and the DDB structure.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the second gate structure overlaps the second portion and the DDB structure.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, further comprising:
a second fin-shaped structure on the second region;
a single diffusion break (SDB) structure in the second fin-shaped structure to divide the second fin-shaped structure into a third portion and a fourth portion; and
a third gate structure on the SDB structure.

### Claim 5 (depends on 4)

The semiconductor device of claim 4, wherein the third gate structure overlaps the third portion, the fourth portion, and the SDB structure.

### Claim 6 (depends on 4)

The semiconductor device of claim 4, wherein a width of the first gate structure is equal to a width of the third gate structure.

### Claim 7 (depends on 4)

The semiconductor device of claim 4, wherein a width of the first gate structure is equal to a width of the second gate structure.

### Claim 8 (depends on 1)

The semiconductor device of claim 1, wherein the first region comprises a NMOS region and the second region comprises a PMOS region.