# US 12,191,378 B2 · Fin field effect transistor device structure

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- Number: US 12,191,378 B2
- Document ID: US12191378B2
- Status: Granted
- Kind: B2
- Application number: 17/669,688
- Filed: 2022-02-11
- Published: 2022-05-26
- Granted: 2025-01-07
- Earliest claimed: 2020-01-30
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Ta-Chun Ma; Yee-Chia Yeo
- Web page: https://patentgrep.com/patent/US12191378B2

## CPC

- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 30/6213: {having rounded corners}
- H10D 30/0245: {by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins}
- H10D 30/6211: {having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates}
- H10D 62/299: {having lateral doping variations (IGFETs having lightly doped source or drain extensions H10D30/601)}
- H10P 14/3802: {Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A fin field effect transistor device structure includes a fin structure formed over a substrate. The structure also includes a liner layer and an isolation structure surrounding the fin structure. The structure also includes a gate dielectric layer formed over the fin structure and the isolation structure. The structure also includes a gate structure formed over the gate dielectric layer. The structure also includes source/drain epitaxial structures formed on opposite sides of the gate structure. The fin structure includes a protruding portion laterally extending over the liner layer.

## Claims

### Claim 1

A fin field effect transistor device structure, comprising:
a fin structure formed over a substrate;
a liner layer and an isolation structure surrounding the fin structure;
a gate dielectric layer formed over the fin structure and the isolation structure;
a gate structure formed over the gate dielectric layer; and
source/drain epitaxial structures formed on opposite sides of the gate structure;
wherein the fin structure comprises a protruding portion laterally extending over the liner layer.

### Claim 2 (depends on 1)

The fin field effect transistor device structure as claimed in claim 1, wherein a bottom surface of the protruding portion of the fin structure is in direct contact with a top surface of the liner layer.

### Claim 3 (depends on 1)

The fin field effect transistor device structure as claimed in claim 1, wherein the fin structure comprises:
a bottom portion with a first dopant concentration;
a middle portion with the first dopant concentration; and
a top portion with a second dopant concentration;
wherein the first dopant concentration is higher than the second concentration, and the protruding portion of the fin structure protrudes from a sidewall of the middle portion.

### Claim 4 (depends on 3)

The fin field effect transistor device structure as claimed in claim 3, wherein a width of the middle portion of the fin structure is wider than a width of the bottom portion of the fin structure, and the width of the middle portion of the fin structure is wider than a width of the top portion of the fin structure.

### Claim 5 (depends on 4)

The fin field effect transistor device structure as claimed in claim 4, wherein the middle portion of the fin structure has a curved top surface above a top surface of the liner layer.

### Claim 6 (depends on 1)

The fin field effect transistor device structure as claimed in claim 1, wherein the protruding portion of the fin structure over the liner layer is poly-crystalline.

### Claim 7 (depends on 1)

The fin field effect transistor device structure as claimed in claim 1, wherein a portion of the gate dielectric layer is sandwiched between the protruding portion of the fin structure and the liner layer.

### Claim 8

A fin field effect transistor device structure, comprising:
a fin structure formed over a substrate;
a liner layer and an isolation structure surrounding a doped portion of the fin structure, wherein the doped portion of the fin structure has a higher dopant concentration than a top portion of the fin structure;
a cap layer covering the fin structure and the liner layer; and
a gate structure, comprising a gate dielectric and a gate electrode, covering the cap layer and the isolation structure,
wherein the cap layer and the fin structure are made of a same semiconductor material.

### Claim 9 (depends on 8)

The fin field effect transistor device structure as claimed in claim 8, wherein a top surface of the doped portion of the fin structure is higher than a bottom surface of the cap layer.

### Claim 10 (depends on 8)

The fin field effect transistor device structure as claimed in claim 8, wherein a sidewall of the cap layer is aligned with a sidewall of the liner layer.

### Claim 11 (depends on 8)

The fin field effect transistor device structure as claimed in claim 8, wherein a top portion of the fin structure is narrower than the doped portion of the fin structure.

### Claim 12 (depends on 8)

The fin field effect transistor device structure as claimed in claim 8, wherein the doped portion of the fin structure has a tip potion, wherein the tip portion is narrower than a bottom portion of the doped portion of the fin structure.

### Claim 13 (depends on 8)

The fin field effect transistor device structure as claimed in claim 8, wherein a top surface of the doped portion of the fin structure is higher than a top surface of the isolation structure.

### Claim 14 (depends on 8)

The fin field effect transistor device structure as claimed in claim 8, wherein the doped portion of the fin structure adjacent to a top surface of the isolation structure has a curved sidewall.

### Claim 15

A fin field effect transistor device structure, comprising:
a fin structure comprising a cap layer formed over a substrate, wherein the cap layer is a semiconductor material;
a liner layer and an isolation structure surrounding a doped portion of the fin structure; and
a gate structure formed over the fin structure and the isolation structure,
wherein the fin structure is over the liner layer, and a bottommost surface of the cap layer extends along a top surface of the liner layer.

### Claim 16 (depends on 15)

The fin field effect transistor device structure as claimed in claim 15, wherein the fin structure is in direct contact with the liner layer.

### Claim 17 (depends on 15)

The fin field effect transistor device structure as claimed in claim 15, wherein the fin structure has a protruding portion protrudes from a sidewall,
wherein the protruding portion is over the liner layer.

### Claim 18 (depends on 17)

The fin field effect transistor device structure as claimed in claim 17, wherein the protruding portion is separated from the liner layer.

### Claim 19 (depends on 17)

The fin field effect transistor device structure as claimed in claim 17, wherein the gate structure comprises an interfacial layer conformally formed over the fin structure,
wherein the interfacial layer is thinner than the liner layer.

### Claim 20 (depends on 8)

The fin field effect transistor device structure as claimed in claim 8, wherein the cap layer directly contacts the fin structure.