# US 12,191,372 B2 · Crystal, semiconductor element and semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,191,372 B2 - Document ID: US12191372B2 - Status: Granted - Kind: B2 - Application number: 17/951,512 - Filed: 2022-09-23 - Published: 2023-01-19 - Granted: 2025-01-07 - Earliest claimed: 2020-01-10 - Assignees: Flosfia Inc. - Applicants: Flosfia Inc. - Inventors: Ryohei Kanno; Osamu Imafuji; Kazuyoshi Norimatsu; Yuji Kato - Web page: https://patentgrep.com/patent/US12191372B2 ## CPC - H10D 64/62: Electrodes ohmically coupled to a semiconductor - H10D 8/60: Schottky-barrier diodes - H10D 62/80: characterised by the materials - H10D 62/875: {being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874)} - H10D 99/00: Subject matter not provided for in other groups of this subclass - H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections - H02M 3/33569: {having several active switching elements (H02M3/3353 takes precedence)} - H02M 3/33573: {Full-bridge at primary side of an isolation transformer} - H02M 3/33576: {having at least one active switching element at the secondary side of an isolation transformer} - H10D 62/117: {Shapes of semiconductor bodies} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P) ## Abstract A crystal that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. A crystal, including: a corundum structured crystalline oxide, the crystalline oxide including gallium and/or indium, and the crystalline oxide further including a metal of Group 4 of the periodic table. The crystal is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system. ## Claims ### Claim 1 A multilayer structure comprising: a semiconductor layer including a dopant and a corundum structured crystalline oxide semiconductor as a major component, the corundum structured crystalline oxide semiconductor containing a first metal that is gallium and/or indium; a crystal film on the semiconductor layer, the crystal film including a corundum structured crystalline oxide, the corundum structured crystalline oxide containing a second metal of Group 4 of the periodic table and a third metal that is gallium and/or indium; and a metal layer on the crystal film, the metal layer including a fourth metal of Group 4 of the periodic table as a major component, wherein a composition ratio of the second metal to the second and third metals contained in the crystal film is greater than a composition ratio of the dopant to the semiconductor layer. ### Claim 2 (depends on 1) The multilayer structure according to claim 1, wherein the second metal of Group 4 of the periodic table in the corundum structured crystalline oxide includes at least a metal selected from titanium, zirconium and hafnium. ### Claim 3 (depends on 1) The multilayer structure according to claim 1, wherein the second metal of Group 4 of the periodic table in the crystal film is a same metal element as the fourth metal of Group 4 of the periodic table in the metal layer. ### Claim 4 (depends on 1) The multilayer structure according to claim 1, wherein the second metal of Group 4 of the periodic table in the crystal film is titanium, and the fourth metal of Group 4 of the periodic table in the metal layer is titanium. ### Claim 5 (depends on 1) The multilayer structure according to claim 1, wherein the corundum structured crystalline oxide semiconductor contains gallium, and the corundum structured crystalline oxide contains gallium. ### Claim 6 (depends on 1) The multilayer structure according to claim 1, wherein an amount of the first metal contained in the semiconductor layer is larger than an amount of the third metal contained in the crystal film by a composition ratio, and an amount of the fourth metal of Group 4 of the periodic table contained in the metal layer is larger than an amount of the second metal of Group 4 contained in the crystal film by a composition ratio. ### Claim 7 (depends on 1) The multilayer structure according to claim 1, wherein an amount of the second metal of Group 4 of the periodic table contained in the crystal film is larger than an amount of the third metal contained in the crystal film by a composition ratio. ### Claim 8 (depends on 1) The multilayer structure according to claim 1, wherein the crystal film is represented by a chemical formula of α-(TiXGa1−X)2O3, 0.5