# US 12,191,363 B2 · Methods of gate contact formation for vertical transistors

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- Number: US 12,191,363 B2
- Document ID: US12191363B2
- Status: Granted
- Kind: B2
- Application number: 18/406,460
- Filed: 2024-01-08
- Published: 2024-05-09
- Granted: 2025-01-07
- Earliest claimed: 2020-12-15
- Assignees: BeSang, Inc.
- Applicants: Sang-Yun Lee
- Inventors: Sang-Yun Lee
- Web page: https://patentgrep.com/patent/US12191363B2

## CPC

- H10D 30/694: {characterised by the shapes, relative sizes or dispositions of the gate electrodes}
- H10B 12/05: {Making the transistor}
- H10B 12/31: {having a storage electrode stacked over the transistor}
- H10B 12/50: {Peripheral circuit region structures}
- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 43/35: with cell select transistors, e.g. NAND
- H10B 43/40: characterised by the peripheral circuit region
- H10D 30/025: {of vertical IGFETs (of VDMOS H10D30/0291; of vertical TFTs H10D30/0318)}
- H10D 30/0413: {of FETs having charge-trapping gate insulators, e.g. MNOS transistors}
- H10D 30/63: Vertical IGFETs (H10D30/66 {, H10D30/6728, H10D30/689, H10D30/693} take precedence)
- H10D 30/6728: {Vertical TFTs}
- H10D 30/693: {Vertical IGFETs having charge trapping gate insulators}
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10D 64/01: Manufacture or treatment
- H10W 90/00: Package configurations
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Structures and methods that facilitate the formation of gate contacts for vertical transistors constructed with semiconductor pillars and spacer-like gates are disclosed. In a first embodiment, a gate contact rests on an extended gate region, a piece of a gate film, patterned at a side of a vertical transistor at the bottom of the gate. In a second embodiment, an extended gate region is patterned on top of one or more vertical transistors, resulting in a modified transistor structure. In a third embodiment, a gate contact rests on a top surface of a gate merged between two closely spaced vertical transistors. Optional methods and the resultant intermediate structures are included in the first two embodiments in order to overcome the related topography and ease the photolithography. The third embodiment includes alternatives for isolating the gate contact from the semiconductor pillars or for isolating the affected semiconductor pillars from the substrate.

## Claims

### Claim 1

A method of fabricating a vertical transistor, comprising:
providing a substrate;
forming a semiconductor pillar over said substrate;
disposing a gate dielectric over said semiconductor pillar;
disposing a gate film over said gate dielectric and over said substrate;
patterning a gate mask over said gate film next to said semiconductor pillar;
etching said gate film with said gate mask with a sufficient over-etch to form a gate; and wherein:
said gate is formed vertically around a middle portion of said semiconductor pillar over said gate dielectric;
said gate mask overlaps at least partly with said gate;
an extended gate region is formed under said gate mask and extends horizontally from a bottom edge of said gate; and
a sharp gate piece is formed vertically where said extended gate region overlaps said gate.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
doping a first region with a first doping type in said middle portion of said semiconductor pillar;
doping a second region with a second doping type in a top portion of said semiconductor pillar, that extends partly into said middle portion from said top portion, and is contiguous with said first region; and
doping a third region with said second doping type in a bottom portion of said semiconductor pillar, that extends partly into said middle portion from said bottom portion, and is contiguous with said first region.

### Claim 3 (depends on 1)

The method of claim 1, further comprising:
disposing a dielectric film over said substrate up to a bottom surface of said extended gate region and surrounding a bottom portion of said semiconductor pillar.

### Claim 4 (depends on 3)

The method of claim 3, wherein the operation of disposing said dielectric film comprises:
disposing a dielectric layer over said substrate and over said semiconductor pillar;
planarizing said dielectric layer such that at least a portion of said dielectric layer remains over said semiconductor pillar; and
etching said dielectric layer incompletely after planarization to become said dielectric film.

### Claim 5 (depends on 1)

The method of claim 1, further comprising:
disposing a gate contact on said extended gate region;
providing a gate bias line; and wherein:
said gate contact is conductively coupled to said extended gate region; and
said gate bias line is coupled to said gate contact.

### Claim 6 (depends on 1)

The method of claim 1, further comprising:
disposing a second dielectric layer over said gate film;
planarizing said second dielectric layer such that at least a portion of said second dielectric layer remains over said gate film over said semiconductor pillar;
etching said second dielectric layer with said gate mask before etching said gate film such that a block of said second dielectric layer is formed over said extended gate region;
disposing a pre-metal dielectric such that said pre-metal dielectric embeds said block of said second dielectric layer;
planarizing said pre-metal dielectric, optionally together with said block of said second dielectric layer to form a flat or nearly flat surface;
disposing a gate contact through said pre-metal dielectric and through said block of said second dielectric layer; and wherein:
said gate mask is disposed over said second dielectric layer after planarizing said second dielectric layer;
said gate contact is conductively coupled to said extended gate region; and
said block of said second dielectric layer has a geometry taller than said semiconductor pillar.

### Claim 7 (depends on 1)

The method of claim 1, wherein the operation of forming said semiconductor pillar comprises:
disposing a semiconductor layer over said substrate;
patterning a pillar mask over said semiconductor layer; and
etching said semiconductor layer with said pillar mask to form said semiconductor pillar.

### Claim 8 (depends on 7)

The method of claim 7, wherein the operation of disposing said semiconductor layer comprises:
providing a donor wafer comprising a semiconductor material as at least a topmost layer;
bonding said donor wafer to said substrate; and
partly removing said donor wafer to leave said semiconductor layer.

### Claim 9 (depends on 8)

The method of claim 8, further comprising:
disposing a conductive bonding layer over said substrate prior to bonding.

### Claim 10

A method of fabricating a plurality of vertical transistors, comprising:
providing a substrate;
forming a plurality of semiconductor pillars over said substrate;
disposing a gate dielectric over each of said plurality of semiconductor pillars;
disposing a gate film over said gate dielectric and over said substrate;
patterning a gate mask over said gate film;
etching said gate film with said gate mask with a sufficient over-etch to form a gate; and wherein:
said gate is formed vertically around a middle portion of each of said plurality of semiconductor pillars over said gate dielectric;
said plurality of semiconductor pillars are arranged in an array with at least one row;
said gate mask has a plurality of mask regions such that each of said plurality of mask regions is patterned next to at least one of said plurality of vertical transistors in a respective one of said at least one row;
each of said plurality of mask regions overlaps at least partly with said gate of said at least one of said plurality of vertical transistors in said respective one of said at least one row;
extended gate regions are formed such that each of said extended gate regions is formed under each of said plurality of mask regions and extends horizontally from a bottom edge of said gate of at least one of said plurality of vertical transistors in said respective one of said at least one row;
a space between immediate neighbors of said plurality of semiconductor pillars within each of said at least one row is sufficiently narrow and said gate film is sufficiently thick such that said plurality of vertical transistors are coupled at said gate along each of said at least one row; and
where said plurality of semiconductor pillars are arranged in said array with at least two rows, a space between said at least two rows is sufficiently wide and said gate film is sufficiently thin such that said plurality of vertical transistors are disconnected at said gate between said at least two rows.

### Claim 11 (depends on 10)

The method of claim 10, further comprising:
doping a first region with a first doping type in said middle portion of each of said plurality of semiconductor pillars;
doping a second region with a second doping type in a top portion of each of said plurality of semiconductor pillars, extending partly into said middle portion from said top portion, and contiguous with said first region; and
doping a third region with said second doping type in a bottom portion of each of said plurality of semiconductor pillars, extending partly into said middle portion from said bottom portion, and contiguous with said first region.

### Claim 12 (depends on 10)

The method of claim 10, further comprising:
disposing a dielectric film over said substrate up to a bottom surface of said extended gate regions and surrounding a bottom portion of each of said plurality of semiconductor pillars.

### Claim 13 (depends on 12)

The method of claim 12, wherein the operation of disposing said dielectric film comprises:
disposing a dielectric layer over said substrate and over said plurality of semiconductor pillars;
planarizing said dielectric layer such that at least a portion of said dielectric layer remains over each of said plurality of semiconductor pillars; and
etching said dielectric layer incompletely after planarization to become said dielectric film.

### Claim 14 (depends on 10)

The method of claim 10, further comprising:
disposing a second dielectric layer on said gate film;
planarizing said second dielectric layer such that at least a portion of said second dielectric layer remains over said gate film over each of said plurality of semiconductor pillars;
etching said second dielectric layer with said gate mask before etching said gate film such that blocks of said second dielectric layer are formed under said gate mask;
disposing and planarizing a pre-metal dielectric such that said pre-metal dielectric embeds said blocks of said second dielectric layer;
disposing gate contacts; and wherein:
said gate mask is disposed over said second dielectric layer after planarizing said second dielectric layer;
each of said blocks of said second dielectric layer is formed under a respective one of said plurality of mask regions;
each of said gate contacts is formed through said pre-metal dielectric and through a respective one of said blocks of said second dielectric layer;
each of said gate contacts is conductively coupled to a respective one of said extended gate regions; and
said blocks of said second dielectric layer have a geometry taller than said plurality of semiconductor pillars.

### Claim 15 (depends on 10)

The method of claim 10, wherein the operation of forming said plurality of semiconductor pillars comprises:
disposing a semiconductor layer over said substrate;
patterning a pillar mask over said semiconductor layer; and
etching said semiconductor layer with said pillar mask to form said plurality of semiconductor pillars.

### Claim 16 (depends on 15)

The method of claim 15, wherein the operation of disposing said semiconductor layer comprises:
providing a donor wafer comprising a semiconductor material as at least a topmost layer;
bonding said donor wafer to said substrate; and
partly removing said donor wafer to leave said semiconductor layer.

### Claim 17 (depends on 16)

The method of claim 16, further comprising:
disposing a conductive bonding layer over said substrate prior to bonding.

### Claim 18 (depends on 10)

The method of claim 10, wherein the operation of forming said plurality of semiconductor pillars comprises:
disposing a semiconductor layer over said substrate;
patterning a first mask over said semiconductor layer;
etching said semiconductor layer with said first mask to form a plurality of semiconductor strips, each of which stretches along a first direction of said at least one row;
patterning a second mask over said plurality of semiconductor strips;
etching said plurality of semiconductor strips with said second mask to form said plurality of semiconductor pillars; and wherein:
each of said plurality of semiconductor strips is formed in a respective one of said at least one row; and
said second mask consists of a plurality of mask region strips, each of which stretches along a second direction perpendicular to said first direction.

### Claim 19 (depends on 10)

The method of claim 10, further comprising:
disposing gate contacts on said extended gate regions;
providing gate bias lines; and wherein:
each of said gate contacts is conductively coupled to a respective one of said extended gate regions;
each of said at least one row has one or more of said gate contacts;
each of said at least one row has a respective one of said gate bias lines; and
each of said gate bias lines is coupled to said one or more of said gate contacts in each of said at least one row.

### Claim 20 (depends on 10)

The method of claim 10, wherein:
each of said at least one of said plurality of vertical transistors in said respective one of said at least one row is at an end of said respective one of said at least one row; and
each of said extended gate regions extends outward from said end of said respective one of said at least one row.

### Claim 21 (depends on 10)

The method of claim 10, further comprising:
forming a plurality of storage capacitors; and wherein:
each of said plurality of storage capacitors is coupled to a respective one of said plurality of semiconductor pillars to form a type of DRAM cell.

### Claim 22 (depends on 21)

The method of claim 21, wherein:
each of said plurality of storage capacitors occupies a top part of said respective one of said plurality of semiconductor pillars; and
said top part of said respective one of said plurality of semiconductor pillars is spaced away from said gate of each of said plurality of vertical transistors.

### Claim 23 (depends on 21)

The method of claim 21, further comprising:
constructing a memory logic circuitry under said plurality of vertical transistors for a memory operation; and wherein:
said memory logic circuitry is electrically coupled to said extended gate regions and to said plurality of semiconductor pillars for said memory operation; and
each of said plurality of vertical transistors serves as a switch for said memory operation.

### Claim 24 (depends on 10)

The method of claim 10, wherein:
said gate dielectric comprises a charge trapping layer to form a type of nonvolatile memory cells.

### Claim 25 (depends on 24)

The method of claim 24, further comprising:
constructing a memory logic circuitry under said plurality of vertical transistors for a memory operation; and wherein:
said memory logic circuitry is electrically coupled to said extended gate regions and to said plurality of semiconductor pillars for said memory operation; and
each of said plurality of vertical transistors serves as a switch for said memory operation.

### Claim 26

A method of fabricating a plurality of vertical transistors in an array, comprising:
providing a substrate;
forming a plurality of semiconductor pillars arranged in a horizontal direction on said substrate;
disposing a dielectric film over said substrate up to a bottom portion of each of said plurality of semiconductor pillars;
disposing a gate dielectric over each of said plurality of semiconductor pillars;
disposing a gate film over said dielectric film and over said gate dielectric;
patterning a gate mask over said gate film in a middle position of said array;
etching said gate film with said gate mask with a sufficient over-etch to form a gate; and wherein:
said gate is formed around a middle portion of each of said plurality of semiconductor pillars over said gate dielectric;
a space between immediate neighbors of said plurality of semiconductor pillars is sufficiently narrow except at said middle position and said gate is sufficiently thick such that said plurality of vertical transistors are coupled at said gate except at said middle position; and
an extended gate region is formed under said gate mask and extends horizontally from a bottom edge of said gate of each of two of said plurality of transistors next to said middle position.

### Claim 27 (depends on 26)

The method of claim 26, further comprising:
doping a first region with a first doping type in said middle portion of each of said plurality of semiconductor pillars;
doping a second region with a second doping type in a top portion of each of said plurality of semiconductor pillars, extending partly into said middle portion from said top portion, and contiguous with said first region; and
doping a third region with said second doping type in said bottom portion of each of said plurality of semiconductor pillars, extending partly into said middle portion from said bottom portion, and contiguous with said first region.

### Claim 28 (depends on 26)

The method of claim 26, wherein the operation of disposing said dielectric film comprises:
disposing a dielectric layer over said substrate and over said plurality of semiconductor pillars;
planarizing said dielectric layer such that at least a portion of said dielectric layer remains over each of said plurality of semiconductor pillars; and
etching said dielectric layer incompletely after planarization to become said dielectric film.

### Claim 29 (depends on 26)

The method of claim 26, further comprising:
disposing a gate contact on said extended gate region;
providing a gate bias line; and wherein:
said gate bias line is coupled to said gate contact; and
said gate bias line is coupled to a gate voltage common to all of said plurality of vertical transistors.

### Claim 30 (depends on 26)

The method of claim 26, wherein:
said middle position divides said array into equal halves.

### Claim 31 (depends on 26)

The method of claim 26, further comprising:
disposing a second dielectric layer on said gate film;
planarizing said second dielectric layer such that at least a portion of said second dielectric layer remains over said gate film over each of said plurality of semiconductor pillars;
etching said second dielectric layer with said gate mask before etching said gate film such that a block of said second dielectric layer is formed over said extended gate region;
disposing a pre-metal dielectric such that said pre-metal dielectric embeds said block of said second dielectric layer;
planarizing said pre-metal dielectric, optionally together with said block of said second dielectric layer to form a flat or nearly flat surface;
disposing a gate contact through said pre-metal dielectric and through said block of said second dielectric layer; and wherein:
said gate mask is disposed over said second dielectric layer after planarizing said second dielectric layer;
said gate contact is conductively coupled to said extended gate region; and
said block of said second dielectric layer has a geometry taller than any of said plurality of semiconductor pillars.

### Claim 32 (depends on 26)

The method of claim 26, wherein the operation of forming said plurality of semiconductor pillars comprises:
disposing a semiconductor layer over said substrate;
patterning a pillar mask over said semiconductor layer; and
etching said semiconductor layer with said pillar mask to form said plurality of semiconductor pillars.

### Claim 33 (depends on 32)

The method of claim 32, wherein the operation of disposing said semiconductor layer comprises:
providing a donor wafer comprising a semiconductor material as at least a topmost layer;
bonding said donor wafer to said substrate; and
partly removing said donor wafer to leave said semiconductor layer.