# US 12,191,357 B2 · Quantum control devices and methods

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- Number: US 12,191,357 B2
- Document ID: US12191357B2
- Status: Granted
- Kind: B2
- Application number: 17/462,733
- Filed: 2021-08-31
- Published: 2023-06-15
- Granted: 2025-01-07
- Earliest claimed: 2019-03-08
- Assignees: Infinite Potential Laboratories LP
- Applicants: Infinite Potential Laboratories LP
- Inventors: Steve MacLean; François Fillion-Gourdeau; Pierre Louis Joseph Lévesque; Jean-Philippe W. MacLean
- Web page: https://patentgrep.com/patent/US12191357B2

## CPC

- H10D 62/882: {Graphene}
- G06N 10/40: Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
- H10D 48/383: {Quantum effect devices, e.g. of devices using quantum reflection, diffraction or interference effects}
- H10D 48/3835: {Semiconductor qubit devices comprising a plurality of quantum mechanically interacting semiconductor quantum dots, e.g. Loss-DiVincenzo spin qubits}
- H10D 62/122: {oriented at angles to substrates, e.g. perpendicular to substrates}
- H10N 99/05: {Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G06N: COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

In a general aspect, a quantum control device includes a substrate having a substrate surface. An insulator layer is disposed over the substrate surface and defines a cavity. The insulator layer includes an insulator surface that defines an opening to the cavity. The quantum control device also includes a field-responsive layer over the insulator surface. The field-responsive layer includes a target region that resides over the opening to the cavity. The quantum control device additionally includes a projection extending from the substrate into the cavity and terminating at a tip. The projection is configured to produce an electric field that interacts with a quantum state in the target region. The tip resides in the cavity and configured to concentrate the electric field produced by the projection.

## Claims

### Claim 1

A quantum control device comprising:
a substrate comprising a substrate surface;
an insulator layer over the substrate surface and defining a cavity, the insulator layer comprising an insulator surface that defines an opening to the cavity;
a field-responsive layer over the insulator surface and comprising a target region that resides over the opening to the cavity; and
a projection that extends from the substrate into the cavity and terminates at a tip, the projection configured to produce an electric field that interacts with a quantum state in the target region, the tip residing in the cavity and configured to concentrate the electric field produced by the projection.

### Claim 2 (depends on 1)

The quantum control device of claim 1, wherein the tip resides in the cavity less than 100 nm from the target region.

### Claim 3 (depends on 1)

The quantum control device of claim 1, wherein the projection has a height-to-width ratio in a range of 2:1 to 10000:1.

### Claim 4 (depends on 1)

The quantum control device of claim 1, wherein the tip of the projection is configured to concentrate the electric field to a magnitude of at least 1×109 V/m in the target region.

### Claim 5 (depends on 1)

The quantum control device of claim 1, wherein the field-responsive layer comprises a plurality of layers.

### Claim 6 (depends on 5)

The quantum control device of claim 5, wherein the plurality of layers comprises:
a target layer containing the target region; and
an intermediate layer disposed between the insulator layer and the target layer;
wherein a thickness of the intermediate layer is part of a distance between the tip of the projection and the target region of the field-responsive layer.

### Claim 7 (depends on 1)

The quantum control device of claim 1, comprising:
an addressing layer below the substrate that comprises an electrical contact opposite a base of the projection.

### Claim 8 (depends on 7)

The quantum control device of claim 7, wherein the electrical contact is configured to receive an electrical signal from the substrate, the electrical signal characterizing the quantum state of the target region, the substrate configured to transfer the electrical signal from the projection to the electrical contact.

### Claim 9 (depends on 1)

The quantum control device of claim 1, comprising:
a laser configured to direct a beam of light onto the target region; and
an electron spectrometer configured to receive electrons emitted from the target region in response to receiving the beam of light.

### Claim 10 (depends on 9)

The quantum control device of claim 9, comprising an optical spectrometer configured to receive photons from the target region.

### Claim 11 (depends on 1)

The quantum control device of claim 1, comprising:
an optical waveguide defined by the insulator layer, the field-responsive layer, the cavity, or any combination thereof;
wherein the optical waveguide is configured to propagate photons that couple to the quantum state of the target region.

### Claim 12

A quantum control method comprising:
generating an electric field from a projection on a substrate, the projection extending from a substrate surface of the substrate into a cavity defined by an insulator layer, the insulator layer disposed over the substrate surface and comprising an insulator surface that defines an opening to the cavity;
receiving the electric field at a target region of a field-responsive layer, the field-responsive layer disposed over the insulating layer, the target region residing over the opening of the cavity; and
controlling the electric field to interact with a quantum state in the target region of the field-responsive layer.

### Claim 13 (depends on 12)

The quantum control method of claim 12, comprising:
wherein generating the electric field at the projection comprises concentrating the electric field with a tip of the projection; and
wherein receiving the electric field at the target region comprises receiving the concentrated electric field at the target region.

### Claim 14 (depends on 13)

The quantum control method of claim 13, wherein the concentrated electric field has a magnitude of at least 1×109 V/m in the target region.

### Claim 15 (depends on 12)

The quantum control method of claim 12, comprising:
transferring an electrical signal from the projection to an electrical contact below the substrate and opposite a base of the projection, the electrical signal characterizing the quantum state of the target region.

### Claim 16 (depends on 12)

The quantum control method of claim 12, comprising:
receiving a beam of light at the target region of the field-responsive layer.

### Claim 17 (depends on 16)

The quantum control method of claim 16, comprising:
receiving, at an electron spectrometer, electrons emitted from the target region in response to the beam of light.

### Claim 18 (depends on 12)

The quantum control method of claim 12, wherein controlling the electric field to interact with the quantum state comprises altering a magnitude of the electric field to alter the quantum state in the target region of the field-responsive layer.

### Claim 19 (depends on 12)

The quantum control method of claim 12, comprising:
while generating the electric field, transferring an electron from the projection to the target region of the field-responsive layer.

### Claim 20 (depends on 12)

The quantum control method of claim 12,
wherein the projection terminates at a tip; and
wherein the tip resides in the cavity less than 100 nm from the target region.

### Claim 21 (depends on 12)

The quantum control method of claim 12, wherein the projection has a height-to-width ratio in a range of 2:1 to 10000:1.