# US 12,191,348 B2 · Capacitors of semiconductor device capable of operating in high frequency operation environment

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- Number: US 12,191,348 B2
- Document ID: US12191348B2
- Status: Granted
- Kind: B2
- Application number: 18/462,909
- Filed: 2023-09-07
- Published: 2023-12-28
- Granted: 2025-01-07
- Earliest claimed: 2020-04-21
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Jaeho Lee; Boeun Park; Younggeun Park; Jooho Lee
- Web page: https://patentgrep.com/patent/US12191348B2

## CPC

- H10D 1/684: {the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers}
- H01G 4/06: Solid dielectrics
- H01G 4/10: Metal-oxide dielectrics {(H01G4/085 takes precedence)}
- H01G 4/30: Stacked capacitors (H01G4/33 takes precedence)
- H10D 1/696: {comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688)}
- H10W 44/20: at high-frequency [HF] or radio frequency [RF]
- H10W 44/241: {for passive devices or passive elements}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Provided are capacitors of semiconductor devices, wherein the capacitors may be used in a high-frequency operation environment. A capacitor includes a first electrode layer, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer, wherein the dielectric layer includes a plurality of unit dielectric layers, and the unit dielectric layer includes first and second sub-dielectric layers that have different dielectric constants and conductivities from each other and are connected in series, and the first and second sub-dielectric layers have a conductivity difference so that the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer.

## Claims

### Claim 1

A capacitor comprising:
a first electrode layer;
a dielectric layer on the first electrode layer; and
a second electrode layer on the dielectric layer,
wherein the dielectric layer comprises a plurality of unit dielectric layers sequentially stacked and configured to be in contact with each other, a first unit dielectric layer of the plurality of unit dielectric layers comprises two sub-dielectric layers, and a second unit dielectric layer of the plurality of unit dielectric layers comprises two sub-dielectric layers, and
wherein each of the two sub-dielectric layers comprises a first sub-dielectric layer and a second sub-dielectric layer, the first sub-dielectric layer and the second sub-dielectric layer having different dielectric constants and conductivities, and are connected in series.

### Claim 2 (depends on 1)

The capacitor of claim 1, wherein a difference in conductivity between one of the first and second sub-dielectric layers and the other sub-dielectric layer is 10 times or more.

### Claim 3 (depends on 1)

The capacitor of claim 1, wherein the dielectric layer has a dielectric constant of 1,000 or less.

### Claim 4 (depends on 1)

The capacitor of claim 1, wherein a sub-dielectric layer of the first and second sub-dielectric layers, having a lower conductivity, has a dielectric constant greater than that of the other sub-dielectric layer, having higher conductivity.

### Claim 5 (depends on 1)

The capacitor of claim 1, wherein the dielectric layer comprises 2 to 4 unit dielectric layers that are sequentially stacked.

### Claim 6 (depends on 1)

The capacitor of claim 1, wherein one of the first and second sub-dielectric layers includes a non-perovskite structure, and the other sub-dielectric layer includes an ABO3-based perovskite structure.

### Claim 7 (depends on 6)

The capacitor of claim 6, wherein the non-perovskite structure comprises a metal oxide layer including one of Hf, Zr, Nb, and Al.

### Claim 8 (depends on 6)

The capacitor of claim 6, wherein, in ABO3,
‘A’ is one of Sr, Ba, Bi, and La, and
‘B’ is one of Ti, Ta, Ru, Hf, Zr, and Mo.

### Claim 9 (depends on 1)

The capacitor of claim 1, wherein the dielectric layer comprises one of a ferroelectric layer, a paraelectric layer, and an anti-ferroelectric layer.

### Claim 10 (depends on 1)

The capacitor of claim 1, wherein the dielectric layer has a thickness of about 12 nm or less.

### Claim 11 (depends on 10)

The capacitor of claim 10, wherein the dielectric layer has a thickness of about 10 nm or less.

### Claim 12 (depends on 10)

The capacitor of claim 10, wherein the dielectric layer has a dielectric constant in a range of about 100 to about 1,000.

### Claim 13 (depends on 1)

The capacitor of claim 1, wherein the dielectric layer has a thickness of about 5 nm or less and has a dielectric constant of about 50 to about 100.

### Claim 14 (depends on 1)

The capacitor of claim 1, wherein the first sub-dielectric layer has a first thickness and the second sub-dielectric layer has a second thickness,
wherein the first thickness is less than the second thickness, a dielectric constant of the first sub-dielectric layer is greater than a dielectric constant of the second sub-dielectric layer, and a conductivity of the first sub-dielectric layer is 10 or more times greater than a conductivity of the second sub-dielectric layer.

### Claim 15 (depends on 1)

The capacitor of claim 1, wherein an operation frequency-capacitance relationship of the capacitor exhibits a constant capacitance at operation frequencies of up 106 hertz or more.

### Claim 16

An apparatus comprising a capacitor, wherein the capacitor comprising:
a first electrode layer;
a dielectric layer on the first electrode layer; and
a second electrode layer on the dielectric layer,
wherein the dielectric layer comprises a plurality of unit dielectric layers sequentially stacked and configured to be in contact with each other, a first unit dielectric layer of the plurality of unit dielectric layers comprises two sub-dielectric layers, and a second unit dielectric layer of the plurality of unit dielectric layers comprises two sub-dielectric layers, and
wherein each of the two sub-dielectric layers comprises a first sub-dielectric layer and a second sub-dielectric layer, the first sub-dielectric layer and the second sub-dielectric layer having different dielectric constants and conductivities, and are connected in series.

### Claim 17 (depends on 16)

The apparatus of claim 16, further comprising a transistor connected to the capacitor.

### Claim 18

An apparatus comprising:
a first capacitor; and
a second capacitor,
wherein the first capacitor comprises a first dielectric layer and the second capacitor comprises a second dielectric layer,
wherein each of the first and second dielectric layers comprises one or more unit dielectric layers and each of the one or more unit dielectric layers includes two sub-dielectric layers, and
wherein a number of the one or more unit dielectric layers of the first dielectric layer is different from that of the one or more unit dielectric layers of the second dielectric layer such that an operating frequency in which a capacitance decreases for the first capacitor is different from an operating frequency in which a capacitance decreases for the second capacitor.

### Claim 19 (depends on 18)

The apparatus of claim 18, wherein
the one or more unit dielectric layers of at least one of the first dielectric layer or the second dielectric layer comprises a plurality of unit dielectric layers sequentially stacked and configured to be in contact with each other, a first unit dielectric layer of the plurality of unit dielectric layers comprises the two sub-dielectric layers, and a second unit dielectric layer of the plurality of unit dielectric layers comprises the two sub-dielectric layers,
each of the two sub-dielectric layers comprises a first sub-dielectric layer and a second sub-dielectric layer, the first sub-dielectric layer and the second sub-dielectric layer having different dielectric constants and conductivities, and are connected in series, and
the capacitance of the at least one of the first dielectric layer or the second dielectric layer converges to the capacitance of the unit dielectric layer as a result of a conductivity difference between the first and second sub-dielectric layers.