# US 12,191,342 B2 · Asymmetric 8-shaped inductor and corresponding switched capacitor array

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- Number: US 12,191,342 B2
- Document ID: US12191342B2
- Status: Granted
- Kind: B2
- Application number: 17/544,883
- Filed: 2021-12-07
- Published: 2022-08-11
- Granted: 2025-01-07
- Earliest claimed: 2021-02-09
- Assignees: Mediatek Inc.
- Applicants: Mediatek Inc.
- Inventors: Ruey-Bo Sun
- Web page: https://patentgrep.com/patent/US12191342B2

## CPC

- H03B 5/1265: {switched capacitors}
- H10D 1/20: Inductors
- H01F 27/2804: {Printed windings}
- H01F 27/29: Terminals; Tapping arrangements {for signal inductances}
- H01F 27/40: Structural association with built-in electric component, e.g. fuse
- H01G 4/40: Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
- H03B 5/1206: {using multiple transistors for amplification}
- H03B: GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS (generators adapted for electrophonic musical instruments G10H; masers or lasers H01S; generation of oscillations in plasma H05H)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)

## Abstract

A semiconductor device includes a substrate; a first terminal and a second terminal; and a conductor arranged on the substrate between the first terminal and the second terminal to constitute an inductor shaped for forming a first loop and a second loop. A first crossing of the conductor with itself is present between the first loop and the second loop. The first loop and the second loop define a first enclosed area and a second enclosed area, respectively. The first enclosed area is smaller than the second enclosed area.

## Claims

### Claim 1

A semiconductor device, comprising:
a substrate;
a first terminal and a second terminal; and
a conductor arranged on the substrate between the first terminal and the second terminal to constitute an inductor shaped for forming a first loop and a second loop, wherein a first crossing of the conductor with itself is present between the first loop and the second loop, wherein the first loop and the second loop define a first enclosed area and a second enclosed area, respectively, and wherein the first enclosed area is smaller than the second enclosed area, wherein the conductor is provided with a second crossing with itself between the terminals and the second loop.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the first terminal and a second terminal are two terminals of a switched capacitor array.

### Claim 3 (depends on 2)

The semiconductor device according to claim 2, wherein the second loop is disposed closer to the switched capacitor array and the first loop is disposed farther away from the switched capacitor array.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein the inductor is at least partially surrounded by a ground metal ring.

### Claim 5 (depends on 4)

The semiconductor device according to claim 4, wherein the ground metal ring is constructed at a top metal layer over the substrate.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, wherein the conductor is further shaped for forming a third loop and a fourth loop, wherein a third crossing of the conductor with itself is present between the third loop and the fourth loop, and wherein the third loop and the fourth loop define a third enclosed area and a fourth enclosed area, respectively, and wherein the fourth enclosed area is greater than the third enclosed area.

### Claim 7 (depends on 6)

The semiconductor device according to claim 6, wherein the conductor is further provided with a fourth crossing with itself connecting the first loop with the third loop thereby further defining the boundaries of the first enclosed area and the third enclosed area.

### Claim 8 (depends on 7)

The semiconductor device according to claim 7, wherein the first loop is connected between the fourth loop and the second loop, the fourth loop is connected between the first loop and the third loop to obtain an 8-shaped structure in series with an 8-shaped structure.

### Claim 9 (depends on 8)

The semiconductor device according to claim 8, wherein the third loop is arranged within the first loop and the fourth loop is arranged within the second loop thereby forming a fifth crossing for further defining the fourth enclosed area, and forming a sixth crossing for further defining the first and second enclosed area, to obtain an 8-within-8 shaped structure.

### Claim 10 (depends on 1)

The semiconductor device according to claim 1, wherein the inductor is part of an inductor-capacitor voltage-controlled oscillator.

### Claim 11

An inductor device, comprising:
a substrate;
a first terminal and a second terminal;
a conductor arranged on the substrate between the first terminal and the second terminal to constitute an inductor shaped for forming a first loop and a second loop, wherein a first crossing of the conductor with itself is present between the first loop and the second loop, wherein the first loop and the second loop define a first enclosed area and a second enclosed area, respectively, and wherein the first enclosed area is smaller than the second enclosed area; and
a switched capacitor array comprising a connecting part, wherein the connecting part is merged with the second loop.

### Claim 12 (depends on 11)

The inductor device according to claim 11, wherein the first terminal and a second terminal are two terminals connected to a switched capacitor array.

### Claim 13 (depends on 12)

The inductor device according to claim 12, wherein the second loop is disposed closer to the switched capacitor array and the first loop is disposed farther away from the switched capacitor array.

### Claim 14 (depends on 11)

The inductor device according to claim 11, further comprising a ground metal ring, wherein the ground metal ring partially surrounded the conductor.

### Claim 15 (depends on 14)

The inductor device according to claim 14, wherein the ground metal ring is constructed at a top metal layer over the substrate.

### Claim 16 (depends on 11)

The inductor device according to claim 11, wherein the conductor is provided with a second crossing with itself between the terminals and the second loop.

### Claim 17 (depends on 16)

The inductor device according to claim 16, wherein the conductor is further shaped for forming a third loop and a fourth loop, wherein a third crossing of the conductor with itself is present between the third loop and the fourth loop, and wherein the third loop and the fourth loop define a third enclosed area and a fourth enclosed area, respectively, and wherein the fourth enclosed area is greater than the third enclosed area.

### Claim 18 (depends on 17)

The inductor device according to claim 17, wherein the conductor is further provided with a fourth crossing with itself connecting the first loop with the third loop thereby further defining the boundaries of the first enclosed area and the third enclosed area.

### Claim 19 (depends on 18)

The inductor device according to claim 18, wherein the first loop is connected between the fourth loop and the second loop, the fourth loop is connected between the first loop and the third loop to obtain an 8-shaped structure in series with an 8-shaped structure.

### Claim 20 (depends on 19)

The inductor device according to claim 19, wherein the third loop is arranged within the first loop and the fourth loop is arranged within the second loop thereby forming a fifth crossing for further defining the fourth enclosed area, and forming a sixth crossing for further defining the first and second enclosed area, to obtain an 8-within-8 shaped structure.