# US 12,191,339 B2 · Light emitting diode and manufacturing method therefor

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- Number: US 12,191,339 B2
- Document ID: US12191339B2
- Status: Granted
- Kind: B2
- Application number: 17/441,123
- Filed: 2020-06-10
- Published: 2022-12-22
- Granted: 2025-01-07
- Earliest claimed: 2020-03-03
- Assignees: Hcp Technology Co., Ltd.
- Applicants: Hcp Technology Co., Ltd.
- Inventors: Wenrong Zhuang; Ming Sun; Xiaochao Fu; Jingquan Lu
- Web page: https://patentgrep.com/patent/US12191339B2

## CPC

- H10H 20/034: {of coatings}
- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- H10H 20/0137: {the light-emitting regions comprising nitride materials}
- H10H 20/018: {Bonding of wafers}
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/8162: {Current-blocking structures}
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/855: Optical field-shaping means, e.g. lenses
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/833: Transparent materials
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

Disclosed are a light emitting diode and a method for manufacturing a light emitting diode. The light emitting diode includes a first-type layer, a light emitting layer, a second-type layer and an electrode layer; the first-type layer includes a first-type gallium nitride; the light emitting layer is located on the first-type layer; the light emitting layer includes a quantum point; the second-type layer is located on the light emitting layer; the second-type layer includes a second-type gallium nitride or an indium tin oxide; and the electrode layer is located on the second-type layer.

## Claims

### Claim 1

A light emitting diode, comprising:
a first-type layer, which comprises a first-type gallium nitride;
a light emitting layer, which is located on the first-type layer and comprises a quantum dot;
a second-type layer, which is located on the light emitting layer and comprises an indium tin oxide (ITO);
an electrode layer, which is located on the second-type layer;
a black matrix, which is located between the first-type layer and the second-type layer and comprises a first window, and the light emitting layer is located within the first window; and
an insulating layer, which covers an upper surface of the electrode layer, a side surface of the electrode layer, and a side surface of the second-type layer.

### Claim 2 (depends on 1)

The light emitting diode of claim 1, wherein a thickness of the second-type layer is in a range of 20 nm to 300 nm.

### Claim 3 (depends on 1)

The light emitting diode of claim 1, wherein the light emitting layer comprises a single-layer quantum dot layer.

### Claim 4 (depends on 3)

The light emitting diode of claim 3, wherein the single-layer quantum dot layer emits at least one of red light, green light, or blue light.

### Claim 5 (depends on 1)

The light emitting diode of claim 1, wherein the light emitting layer comprises a composite structure of a superlattice quantum well layer and a quantum dot layer.

### Claim 6 (depends on 5)

The light emitting diode of claim 5, wherein the superlattice quantum well layer emits blue light, and the quantum dot layer emits at least one of red light or green light.

### Claim 7 (depends on 3)

The light emitting diode of claim 3, wherein a thickness of the quantum dot layer is in a range of 2 nm to 20 μm.

### Claim 8 (depends on 1)

The light emitting diode of claim 1, wherein the electrode layer comprises the indium tin oxide (ITO).

### Claim 9 (depends on 1)

The light emitting diode of claim 1, wherein the insulating layer comprises a second window, and the black matrix comprises a third window;
wherein the light emitting diode further comprises:
a first electrode located within the second window; and
a second electrode located within the third window.