# US 12,191,326 B2 · Solid-state imaging device

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- Number: US 12,191,326 B2
- Document ID: US12191326B2
- Status: Granted
- Kind: B2
- Application number: 18/377,671
- Filed: 2023-10-06
- Published: 2024-02-01
- Granted: 2025-01-07
- Earliest claimed: 2018-07-31
- Assignees: Sony Semiconductor Solutions Corporation
- Applicants: Sony Semiconductor Solutions Corporation
- Inventors: Toshiaki Ono
- Web page: https://patentgrep.com/patent/US12191326B2

## CPC

- H10F 39/1825: {Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures}
- H10F 39/8023: {Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery}
- B60R 1/001: {integrated in the windows, e.g. Fresnel lenses}
- G02B 23/2407: {Optical details}
- H04N 25/17: Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
- H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors
- H04N 25/766: comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
- H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
- H10F 39/192: {Colour image sensors}
- H10F 39/8037: {the integrated elements comprising a transistor}
- H10F 39/8053: {Colour filters}
- H10F 39/812: {Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region}
- H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels}
- H10K 39/32: Organic image sensors
- H04N 23/12: with one sensor only
- H04N 23/555: {for picking-up images in sites, inaccessible due to their dimensions or hazardous conditions, e.g. endoscopes or borescopes}
- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/8063: {Microlenses}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- B60R: VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A solid-state imaging device according to an embodiment of the present disclosure includes a stacked photoelectric converter for each of pixels. The stacked photoelectric converter has a plurality of photoelectric conversion elements stacked therein. The plurality of photoelectric conversion elements each has different wavelength selectivity. This solid-state imaging device further includes a plurality of data output lines from which pixel signals based on electric charges outputted from the photoelectric conversion elements are outputted. A plurality of data output lines is provided for each predetermined unit pixel column. The plurality of the data output lines is equal in number to an integer multiple of the photoelectric conversion elements stacked in the stacked photoelectric converter.

## Claims

### Claim 1

A solid-state imaging device, comprising:
a plurality of pixels;
a plurality of stacked photoelectric converters, wherein one stacked photoelectric converter of the plurality of stacked photoelectric converters is included in each pixel of the plurality of pixels, each of the stacked photoelectric converters having a plurality of photoelectric conversion elements stacked therein, the plurality of photoelectric conversion elements each having different wavelength selectivity; and
a plurality of data output lines from which pixel signals are outputted, the pixel signals being based on electric charges outputted from the photoelectric conversion elements,
wherein a number of the data output lines is provided for each of a plurality of predetermined unit pixel columns,
wherein the number of the data output lines provided for each of the plurality of predetermined unit pixel columns is equal to an integer multiple of the photoelectric conversion elements stacked in each of the stacked photoelectric converter,
wherein a first stacked photoelectric converter of the plurality of photoelectric converters includes a first photoelectric conversion element, a second photoelectric conversion element, and a first color filter provided between the first photoelectric conversion element and the second photoelectric conversion element,
wherein a second stacked photoelectric converter of the plurality of photoelectric converters includes a third photoelectric conversion element, a fourth photoelectric conversion element, and a second color filter provided between the third photoelectric conversion element and the fourth photoelectric conversion element,
wherein the first photoelectric conversion element and the third photoelectric conversion element are configured to selectively perform photoelectric conversion of light of a first color,
wherein the second photoelectric conversion element is configured to perform photoelectric conversion of light of a second color that has transmitted through the first photoelectric conversion element and the first color filter,
wherein the fourth photoelectric conversion element is configured to perform photoelectric conversion of light of a third color that has transmitted through the third photoelectric conversion element and the second color filter,
wherein a first data output line is provided for the first photoelectric conversion element and the third photoelectric conversion element, and
wherein a second data output line is provided for the second photoelectric conversion element and the fourth photoelectric conversion element.

### Claim 2 (depends on 1)

The solid-state imaging device according to claim 1, further comprising a pixel circuit for a plurality of the photoelectric conversion elements having a same wavelength selectivity, the pixel circuit outputting the pixel signals to the data output lines, the pixel signals being based on the electric charges outputted from the photoelectric conversion elements, wherein
a plurality of the respective data output lines is provided for wavelength selectivity types of the photoelectric conversion elements in each of the unit pixel columns or a plurality of the data output lines is provided for each of wavelength selectivity types of the photoelectric conversion elements in each of the unit pixel columns.

### Claim 3 (depends on 1)

The solid-state imaging device according to claim 1, further comprising a pixel circuit for each of the photoelectric conversion elements, the pixel circuit outputting the pixel signal to the data output line, the pixel signal being based on the electric charge outputted from the photoelectric conversion element, wherein
a plurality of the respective data output lines is provided for wavelength selectivity types of the photoelectric conversion elements in each of the unit pixel columns or a plurality of the data output lines is provided for each of wavelength selectivity types of the photoelectric conversion elements in each of the unit pixel columns.

### Claim 4 (depends on 1)

The solid-state imaging device according to claim 1, further comprising a column processing circuit for each of the data output lines.

### Claim 5 (depends on 1)

The solid-state imaging device according to claim 1, further comprising a changeover switch that switches coupling between any of two of a plurality of the data output lines and a column processing circuit.

### Claim 6 (depends on 1)

The solid-state imaging device according to claim 1, wherein at least one element among a plurality of the photoelectric conversion elements includes a photoelectric conversion layer in each of the stacked photoelectric converters, the photoelectric conversion layer being formed by using an organic material.