# US 12,191,324 B2 · Array substrate, manufacturing method of array substrate, and display panel > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,191,324 B2 - Document ID: US12191324B2 - Status: Granted - Kind: B2 - Application number: 17/593,659 - Filed: 2021-07-26 - Published: 2023-07-06 - Granted: 2025-01-07 - Earliest claimed: 2021-06-24 - Assignees: Wuhan China Star Optoelectronics Technology Co., Ltd. - Applicants: Wuhan China Star Optoelectronics Technology Co., Ltd. - Inventors: Fan Gong; Fei Ai; Jiyue Song - Web page: https://patentgrep.com/patent/US12191324B2 ## CPC - H10F 39/107: {having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays} - H10D 86/0231: {using masks, e.g. half-tone masks} - H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors} - H10D 86/60: wherein the TFTs are in active matrices - H10F 39/016: {of thin-film-based image sensors} - H10F 39/12: Image sensors - H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract An array substrate, a manufacturing method of the array substrate, and a display panel are provided. The array substrate includes a photosensitive sensor. The photosensitive sensor includes a photosensitive module and a storage module. The photosensitive module includes a photosensitive semiconductor layer. The storage module includes a first electrode plate and a second electrode plate. Wherein, the photosensitive semiconductor layer is disposed on an extension section of a drain electrode. A number of film layer of the photosensitive sensor is decreased, and photomasks are saved. ## Claims ### Claim 1 An array substrate, comprising: a substrate; a thin film transistor disposed on the substrate and comprising a gate electrode, an active layer, and a source electrode and a drain electrode connected to the active layer; a photosensitive sensor, wherein the photosensitive sensor comprises a photosensitive module and a storage module, the photosensitive module comprises a photosensitive semiconductor layer, and the storage module comprises a first electrode plate and a second electrode plate; and a first insulation layer disposed on the photosensitive semiconductor layer and the thin film transistor, wherein the storage module is disposed on the first insulation layer, wherein the photosensitive semiconductor layer is disposed on an extension section of the drain electrode, the first electrode plate is electrically connected to a side of the photosensitive semiconductor layer away from the extension section of the drain electrode, and the second electrode plate is electrically connected to the drain electrode. ### Claim 2 (depends on 1) The array substrate as claimed in claim 1, wherein the storage module comprises a storage capacitor, and the first electrode plate and the second electrode plate compose the storage capacitor. ### Claim 3 (depends on 2) The array substrate as claimed in claim 2, wherein the second electrode plate is disposed on the first insulation layer, and the array substrate further comprises: a second insulation layer disposed on the second electrode plate, wherein the first electrode plate is disposed on the second insulation layer, and the first electrode plate is connected to the photosensitive semiconductor layer through a first via hole in the first insulation layer and the second insulation layer. ### Claim 4 (depends on 3) The array substrate as claimed in claim 3, wherein the array substrate further comprises: a connection electrode disposed on the second insulation layer, wherein the second insulation layer comprises a second via hole, the first insulation layer and the second insulation layer comprises a third via hole, an end of the connection electrode is connected to the second electrode plate through the second via hole, and another end of the connection electrode is connected to the drain electrode through the third via hole. ### Claim 5 (depends on 3) The array substrate as claimed in claim 3, wherein the first insulation layer comprises a fourth via hole, and the second electrode plate is connected to the drain electrode through the fourth via hole. ### Claim 6 (depends on 2) The array substrate as claimed in claim 2, wherein the first electrode plate is disposed on the first insulation layer, and the array substrate further comprises: a second insulation layer disposed on the first electrode plate, wherein the second electrode plate is disposed on the second insulation layer, the first electrode plate is connected to the photosensitive semiconductor layer through a fifth via hole in the first insulation layer, and the second electrode plate is connected to the drain electrode through a sixth via hole in the first insulation layer and the second insulation layer. ### Claim 7 (depends on 3) The array substrate as claimed in claim 3, wherein the photosensitive semiconductor layer is made of amorphous silicon. ### Claim 8 (depends on 7) The array substrate as claimed in claim 7, wherein the photosensitive semiconductor layer comprises N-type amorphous silicon disposed on the extension section of the drain electrode and intrinsic amorphous silicon disposed on the N-type amorphous silicon, or the photosensitive semiconductor layer comprises the N-type amorphous silicon disposed on the extension section of the drain electrode, the intrinsic amorphous silicon disposed on the N-type amorphous silicon, and P-type amorphous silicon disposed on the intrinsic amorphous silicon. ### Claim 9 (depends on 7) The array substrate as claimed in claim 7, wherein the array substrate further comprises: a common electrode disposed on the first insulation layer; and a pixel electrode disposed on the second insulation layer; wherein the common electrode and a corresponding electrode plate on the first insulation layer are manufactured by a same metal, and the pixel electrode and a corresponding electrode plate on the second insulation layer are manufactured by a same metal. ### Claim 10 (depends on 7) The array substrate as claimed in claim 7, wherein the array substrate further comprises: a pixel electrode, disposed on the first insulation layer; and a common electrode disposed on the second insulation layer; wherein the pixel electrode and a corresponding electrode on the first insulation layer are manufactured by a same metal, and the common electrode and a corresponding electrode plate on the second insulation layer are manufactured by a same metal. ### Claim 11 (depends on 7) The array substrate as claimed in claim 7, wherein an orthogonal projection of the first electrode plate on the substrate and an orthogonal projection of the photosensitive semiconductor layer on the substrate at least partially overlap with each other, and a material of the first electrode plate is a transparent material. ### Claim 12 (depends on 9) The array substrate as claimed in claim 9, wherein the first electrode plate is electrically connected to the common electrode. ### Claim 13 A manufacturing method of an array substrate, comprising following manufacturing steps: providing a base substrate, and manufacturing a thin film transistor on the base substrate, wherein the thin film transistor comprises a gate electrode, an active layer, a source electrode and a drain electrode connected to the active layer; forming a photosensitive semiconductor layer on an extension section of the drain electrode; forming a first insulation layer on the photosensitive semiconductor layer and thin film transistor, and forming a first metal layer with a patterned shape on the first insulation layer, wherein the first metal layer comprises one of a first electrode plate or a second electrode plate; and forming a second insulation layer on the first metal layer, and forming a second metal layer with a patterned shape on the second insulation layer, wherein the second metal layer comprises another one of the first electrode plate or the second electrode plate, the first electrode plate is electrically connected to the photosensitive semiconductor layer through a via hole, the second electrode plate is electrically connected to the drain electrode through another via hole, and the first electrode plate and the second electrode plate compose a storage capacitor; wherein the storage capacitor is disposed on the first insulation layer. ### Claim 14 A display panel, comprising an array substrate, wherein the array substrate comprises: a substrate; a thin film transistor disposed on the substrate and comprising a gate electrode, an active layer, and a source electrode and a drain electrode connected to the active layer; a photosensitive sensor, wherein the photosensitive sensor comprises a photosensitive module and a storage module, the photosensitive module comprises a photosensitive semiconductor layer, and the storage module comprises a first electrode plate and a second electrode plate; and a first insulation layer disposed on the photosensitive semiconductor layer and the thin film transistor, wherein the storage module is disposed on the first insulation layer, wherein the photosensitive semiconductor layer is disposed on an extension section of the drain electrode, the first electrode plate is electrically connected to a side of the photosensitive semiconductor layer away from the extension section of the drain electrode, and the second electrode plate is electrically connected to the drain electrode. ### Claim 15 (depends on 14) The display panel as claimed in claim 14, wherein the storage module comprises a storage capacitor, and the first electrode plate and the second electrode plate compose the storage capacitor. ### Claim 16 (depends on 15) The display panel as claimed in claim 15, wherein the second electrode plate is disposed on the first insulation layer, and the array substrate further comprises: a second insulation layer disposed on the second electrode plate, wherein the first electrode plate is disposed on the second insulation layer, and the first electrode plate is connected to the photosensitive semiconductor layer through a first via hole in the first insulation layer and the second insulation layer. ### Claim 17 (depends on 16) The display panel as claimed in claim 16, wherein the array substrate further comprises: a connection electrode disposed on the second insulation layer, wherein the second insulation layer comprises a second via hole, the first insulation layer and the second insulation layer comprises a third via hole, an end of the connection electrode is connected to the second electrode plate through the second via hole, and another end of the connection electrode is connected to the drain electrode through the third via hole. ### Claim 18 (depends on 16) The display panel as claimed in claim 16, wherein the array substrate further comprises: the first insulation layer comprising a fourth via hole, wherein the second electrode plate is connected to the drain electrode through the fourth via hole. ### Claim 19 (depends on 15) The display panel as claimed in claim 15, wherein the first electrode plate is disposed on the first insulation layer, and the array substrate further comprises: a second insulation layer disposed on the first electrode plate, wherein the second electrode plate is disposed on the second insulation layer, the first electrode plate is connected to the photosensitive semiconductor layer through a fifth via hole in the first insulation layer, and the second electrode plate is connected to the drain electrode through a sixth via hole in the first insulation layer and the second insulation layer. ### Claim 20 (depends on 14) The display panel as claimed in claim 14, wherein the display panel further comprises a driving chip, and the second electrode plate is electrically connected to the driving chip through a wiring.