# US 12,191,318 B2 · Display panel and display device

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- Number: US 12,191,318 B2
- Document ID: US12191318B2
- Status: Granted
- Kind: B2
- Application number: 18/229,040
- Filed: 2023-08-01
- Published: 2023-11-23
- Granted: 2025-01-07
- Earliest claimed: 2020-12-30
- Assignees: Xiamen Tianma Micro-Electronics Co., Ltd.
- Applicants: Xiamen Tianma Micro-Electronics Co., Ltd.
- Inventors: Shui He; Ping An; Yaqi Kuang
- Web page: https://patentgrep.com/patent/US12191318B2

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/471: {having different architectures, e.g. having both top-gate and bottom-gate TFTs}
- H10D 30/6734: {having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor, a second transistor and a third transistor, where the first transistor, the second transistor and the third transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.

## Claims

### Claim 1

A display panel, comprising:
a base substrate;
a first transistor, a second transistor and a third transistor, wherein the first transistor, the second transistor and the third transistor are formed on the base substrate, wherein the first transistor comprises a first active layer, a first gate, a first source and a first drain, and wherein the first active layer comprises silicon; wherein the second transistor comprises a second active layer, a second gate, a second source, and a second drain, and wherein the second active layer comprises an oxide semiconductor; wherein the third transistor comprises a third active layer, a fourth gate, a third source and a third drain, and the third active layer comprises an oxide semiconductor;
a first insulating layer and a second insulating layer, wherein the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer, and wherein the second insulating layer is disposed on one side of the second active layer facing towards the base substrate; and
a fourth insulating layer and a fifth insulating layer, wherein the fourth insulating layer is disposed on one side of the third active layer facing away from the base substrate and between the third active layer and the fourth gate, and wherein the fifth insulating layer is disposed on one side of the third active layer facing towards the base substrate;
wherein a concentration of oxygen in the first insulating layer is lower than a concentration of oxygen in the second insulating layer, and a concentration of oxygen in the fourth insulating layer is lower than a concentration of oxygen in the fifth insulating layer;
wherein the display panel comprises a pixel circuit and a driver circuit providing a drive signal for the pixel circuit, wherein the driver circuit comprises the second transistor, the pixel circuit comprises the third transistor, and wherein the pixel circuit comprises the first transistor or the driver circuit comprises the first transistor;
wherein a ratio of the concentration of oxygen to a concentration of silicon in the first insulating layer is A, wherein a ratio of the concentration of oxygen to a concentration of silicon in the second insulating layer is B, and A<B.

### Claim 2 (depends on 1)

The display panel of claim 1, wherein
the third transistor is a switch transistor of the pixel circuit; and
wherein a difference between the concentration C1 of oxygen in the first insulating layer and the concentration C2 of oxygen in the second insulating layer is R1=C2−C1, wherein a difference between the concentration C4 of oxygen in the fourth insulating layer and the concentration C5 of oxygen in the fifth insulating layer is R2=C5−C4, and R1≥R2.

### Claim 3 (depends on 1)

The display panel of claim 1, wherein
the third transistor is a switch transistor of the pixel circuit, and
wherein the concentration of oxygen in the first insulating layer is lower than the concentration of oxygen in the fourth insulating layer.

### Claim 4 (depends on 1)

The display panel of claim 1, wherein
the third transistor is a drive transistor of the pixel circuit; and
wherein a difference between the concentration C1 of oxygen in the first insulating layer and the concentration C2 of oxygen in the second insulating layer is R1=C2−C1, and wherein a difference between the concentration C4 of oxygen in the fourth insulating layer and the concentration C5 of oxygen in the fifth insulating layer is R2=C5−C4, and wherein R1≤R2.

### Claim 5 (depends on 1)

The display panel of claim 1, wherein
the third transistor is a drive transistor of the pixel circuit; and
wherein the concentration of oxygen in the first insulating layer is higher than the concentration of oxygen in the fourth insulating layer.

### Claim 6 (depends on 1)

The display panel of claim 1, wherein
the first insulating layer comprises silicon oxide SiOx and the second insulating layer comprises silicon oxide SiOy, wherein x is a ratio of a number of oxygen atoms to a number of silicon atoms in the first insulating layer, wherein y is a ratio of a number of oxygen atoms to a number of silicon atoms in the second insulating layer, and wherein x<y.

### Claim 7 (depends on 1)

The display panel of claim 1, wherein
the second transistor comprises a third gate disposed on one side of the second insulating layer facing towards the base substrate, and wherein a thickness of the first insulating layer is less than a thickness of the second insulating layer.

### Claim 8 (depends on 1)

A display device, comprising the display panel of claim 1.

### Claim 9 (depends on 1)

The display panel of claim 1, wherein
the display panel further comprises a fourth transistor, wherein the fourth transistor comprises a fourth active layer, a fourth source, a fourth drain, and a fifth gate, and wherein the fourth active layer contains an oxide semiconductor; and
wherein the display panel further comprises a sixth insulating layer and a seventh insulating layer, wherein the sixth insulating layer is disposed on one side of the fourth active layer facing away from the base substrate and between the fourth active layer and the fifth gate, and wherein the seventh insulating layer is disposed on one side of the fourth active layer facing towards the base substrate, wherein
a concentration of oxygen in the sixth insulating layer is lower than a concentration of oxygen in the seventh insulating layer.

### Claim 10 (depends on 9)

The display panel of claim 9, wherein
the third transistor is a drive transistor of the pixel circuit, and wherein the fourth transistor is a switch transistor of the pixel circuit, wherein
a difference between the concentration C4 of oxygen in the fourth insulating layer and the concentration C5 of oxygen in the fifth insulating layer is R2=C5−C4, wherein a difference between the concentration C6 of oxygen in the sixth insulating layer and the concentration C7 of oxygen in the seventh insulating layer is R3=C7−C6, and wherein R2≥R3.

### Claim 11 (depends on 9)

The display panel of claim 9, wherein
the third transistor is a drive transistor of the pixel circuit, and wherein the fourth transistor is a switch transistor of the pixel circuit, and
the wherein concentration of oxygen in the fourth insulating layer is lower than the concentration of oxygen in the sixth insulating layer.

### Claim 12 (depends on 1)

The display panel of claim 1, wherein
in the second insulating layer, a concentration of oxygen on one side facing towards the second active layer is higher than a concentration of oxygen on one side facing away from the second active layer.

### Claim 13 (depends on 12)

The display panel of claim 12, wherein
the second insulating layer comprises a first sub-insulating layer and a second sub-insulating layer, wherein the second sub-insulating layer is disposed on one side of the first sub-insulating layer facing away from the second active layer, wherein each of the first sub-insulating layer and the second sub-insulating layer comprises silicon oxide, and wherein a concentration of oxygen in the first sub-insulating layer is higher than a concentration of oxygen in the second sub-insulating layer.

### Claim 14 (depends on 13)

The display panel of claim 13, wherein
a concentration of hydrogen in the second sub-insulating layer is higher than a concentration of oxygen in the first sub-insulating layer.

### Claim 15

A display panel, comprising:
a base substrate;
a first transistor, a second transistor and a third transistor, wherein the first transistor, the second transistor and the third transistor are formed on the base substrate, wherein the first transistor comprises a first active layer, a first gate, a first source, and a first drain, wherein the first active layer comprises silicon, wherein the second transistor comprises a second active layer, a second gate, a third gate, a second source, and a second drain, and wherein the second active layer comprises an oxide semiconductor; wherein the third transistor comprises a third active layer, a fourth gate, a third source and a third drain, and the third active layer comprises an oxide semiconductor;
a first insulating layer and a second insulating layer, wherein the first insulating layer is disposed between the second gate and the second active layer, wherein the second insulating layer is disposed between the third gate and the second active layer, and wherein a thickness of the first insulating layer is less than a thickness of the second insulating layer; and
a fourth insulating layer and a fifth insulating layer, wherein the fourth insulating layer is disposed on one side of the third active layer facing away from the base substrate and between the third active layer and the fourth gate, and wherein the fifth insulating layer is disposed on one side of the third active layer facing towards the base substrate;
wherein a concentration of oxygen in the first insulating layer is lower than a concentration of oxygen in the second insulating layer, and a concentration of oxygen in the fourth insulating layer is lower than a concentration of oxygen in the fifth insulating layer;
wherein the display panel comprises a pixel circuit and a driver circuit providing a drive signal for the pixel circuit, wherein the driver circuit comprises the second transistor, the pixel circuit comprises the third transistor, and wherein the pixel circuit comprises the first transistor or the driver circuit comprises the first transistor;
wherein a ratio of the concentration of oxygen to a concentration of silicon in the first insulating layer is A, wherein a ratio of the concentration of oxygen to a concentration of silicon in the second insulating layer is B, and A<B.

### Claim 16 (depends on 15)

A display device, comprising the display panel of claim 15.

### Claim 17

A display panel, comprising:
a base substrate;
a first transistor, a second transistor and a third transistor, wherein the first transistor, the second transistor and the third transistor are formed on the base substrate, wherein the first transistor comprises a first active layer, a first gate, a first source and a first drain, and wherein the first active layer comprises silicon; wherein the second transistor comprises a second active layer, a second gate, a second source, and a second drain, and wherein the second active layer comprises an oxide semiconductor; wherein the third transistor comprises a third active layer, a fourth gate, a third source and a third drain, and the third active layer comprises an oxide semiconductor;
a first insulating layer and a second insulating layer, wherein the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer, and wherein the second insulating layer is disposed on one side of the second active layer facing towards the base substrate; and
a fourth insulating layer and a fifth insulating layer, wherein the fourth insulating layer is disposed on one side of the third active layer facing away from the base substrate and between the third active layer and the fourth gate, and wherein the fifth insulating layer is disposed on one side of the third active layer facing towards the base substrate;
wherein a concentration of oxygen in the first insulating layer is lower than a concentration of oxygen in the second insulating layer, and a concentration of oxygen in the fourth insulating layer is lower than a concentration of oxygen in the fifth insulating layer;
wherein a ratio of the concentration of oxygen to a concentration of silicon in the first insulating layer is A, wherein a ratio of the concentration of oxygen to a concentration of silicon in the second insulating layer is B, and A<B.

### Claim 18 (depends on 17)

A display device, comprising the display panel of claim 17.