# US 12,191,312 B2 · Light-emitting device and electronic device using the same

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- Number: US 12,191,312 B2
- Document ID: US12191312B2
- Status: Granted
- Kind: B2
- Application number: 18/131,905
- Filed: 2023-04-07
- Published: 2024-04-18
- Granted: 2025-01-07
- Earliest claimed: 2008-07-10
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Satoshi Seo; Kaoru Hatano
- Web page: https://patentgrep.com/patent/US12191312B2

## CPC

- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/0214: {using temporary substrates}
- H10D 86/40: characterised by multiple TFTs
- H10D 86/411: {characterised by materials, geometry or structure of the substrates}
- H10D 86/60: wherein the TFTs are in active matrices
- H10H 20/8515: {not being in contact with the bodies}
- H10H 20/855: Optical field-shaping means, e.g. lenses
- H10K 59/124: Insulating layers formed between TFT elements and OLED elements
- H10K 59/38: comprising colour filters or colour changing media [CCM]
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10K 50/125: specially adapted for multicolour light emission, e.g. for emitting white light
- H10K 50/13: comprising stacked EL layers within one EL unit
- H10K 59/1201: {Manufacture or treatment}
- H10K 71/80: using temporary substrates
- H10K 2102/311: {Flexible OLED}
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; an interlayer insulating film over the color filter; and a white-emissive light-emitting element formed over the interlayer insulating film and being electrically connected to the thin film transistor.

## Claims

### Claim 1

A light-emitting device comprising:
a transistor over a substrate, the transistor comprising an oxide semiconductor;
a light-emitting element over the transistor; and
a color filter overlapping with the light-emitting element,
wherein the light-emitting element comprises:
a first light-emitting layer comprising a first light-emitting substance;
a second light-emitting layer over the first light-emitting layer, the second light-emitting layer comprising a second light-emitting substance;
a third light-emitting layer over the second light-emitting layer, the third light-emitting layer comprising a third light-emitting substance; and
a fourth light-emitting layer over the third light-emitting layer, the fourth light-emitting layer comprising a fourth light-emitting substance, and
wherein the second light-emitting layer and the third light-emitting layer are adjacent to each other without an electrode therebetween.

### Claim 2 (depends on 1)

The light-emitting device according to claim 1, wherein the oxide semiconductor comprises indium, gallium, and zinc.

### Claim 3

A light-emitting device comprising:
a transistor over a substrate, the transistor comprising an oxide semiconductor;
a light-emitting element over the transistor; and
a color filter overlapping with the light-emitting element,
wherein the light-emitting element comprises:
a first light-emitting layer comprising a first light-emitting substance;
a second light-emitting layer over the first light-emitting layer, the second light-emitting layer comprising a second light-emitting substance;
a third light-emitting layer over the second light-emitting layer, the third light-emitting layer comprising a third light-emitting substance;
a fourth light-emitting layer over the third light-emitting layer, the fourth light-emitting layer comprising a fourth light-emitting substance; and
an anode and a cathode,
wherein the second light-emitting layer and the third light-emitting layer are adjacent to each other without an electrode therebetween, and
wherein the first light-emitting layer, the second light-emitting layer, the third light-emitting layer, and the fourth light-emitting layer are positioned between the anode and the cathode.

### Claim 4 (depends on 3)

The light-emitting device according to claim 3, wherein the oxide semiconductor comprises indium, gallium, and zinc.