# US 12,191,283 B2 · Manufacturing method of three-dimensional stacking structure

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- Number: US 12,191,283 B2
- Document ID: US12191283B2
- Status: Granted
- Kind: B2
- Application number: 17/751,692
- Filed: 2022-05-24
- Published: 2022-09-08
- Granted: 2025-01-07
- Earliest claimed: 2019-08-28
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Hsien-Wei Chen; Jie Chen; Ming-Fa Chen
- Web page: https://patentgrep.com/patent/US12191283B2

## CPC

- H10W 74/129: {forming a chip-scale package [CSP]}
- H10W 90/00: Package configurations
- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- H10W 40/228: {the projecting parts being wire-shaped or pin-shaped}
- H10W 74/014: {using batch processing}
- H10W 74/016: {using moulds}
- H10W 80/00: Direct bonding of chips, wafers or substrates
- H10W 70/09: extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
- H10W 72/01: {Manufacture or treatment}
- H10W 72/0198: {batch processes}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/874: {On different surfaces}
- H10W 72/941: {Dispositions of bond pads}
- H10W 72/951: {Materials of bond pads}
- H10W 72/963: {Providing mechanical bonding or support, e.g. dummy bond pads}
- H10W 72/965: {Providing thermal transfer}
- H10W 72/967: {Multiple bond pads having different functions}
- H10W 80/102: {Controlling the environment during the bonding, e.g. the temperature or pressure}
- H10W 80/301: {Bonding techniques, e.g. hybrid bonding}
- H10W 80/312: {characterised by the direct bonding of electrically conductive pads}
- H10W 80/327: {characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers}
- H10W 90/20: Configurations of stacked chips
- H10W 90/28: the stacked chips having different sizes, e.g. chip stacks having a pyramidal shape
- H10W 90/288: {characterised by arrangements for thermal management of the stacked chips}
- H10W 90/291: {characterised by containers, encapsulations, or other housings for the stacked chips}
- H10W 90/297: {characterised by the through-semiconductor vias [TSVs] in the stacked chips}
- H10W 90/792: {between multiple chips}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A stacking structure including a first die, a second die stacked on the first die, and a filling material is provided. The first die has a first bonding structure, and the first bonding structure includes first bonding pads and a first heat dissipating element. The second die has a second bonding structure, and the second bonding structure includes second bonding pads and a second heat dissipating element. The first bonding pads are bonded with the second bonding pads. The first heat dissipating element is connected to one first bonding pad of the first bonding pads and the second heat dissipating element is connected to one second bonding pad of the second bonding pads. The filling material is disposed over the first die and laterally around the second die. The first and second dies are bonded through the first and second bonding structures.

## Claims

### Claim 1

A method for forming stacking structures, comprising:
providing a first substrate with first bonding structures, wherein the first bonding structure includes a first bonding film, first bonding pads embedded in the first bonding film and a first heat dissipating element;
providing second dies onto the first substrate, each second die having a second bonding structure, wherein the second bonding structure includes a second bonding film, second bonding pads embedded in the second bonding film and a second heat dissipating element;
bonding the second dies with the first substrate through bonding the first and second bonding structures, wherein the first and second heat dissipating elements are electrically floating; and
performing a dicing process to cut through the first substrate to form the stacking structures.

### Claim 2 (depends on 1)

The method of claim 1, further comprising forming a filling material over the first substrate and covering the second dies.

### Claim 3 (depends on 2)

The method of claim 2, wherein forming a filling material over the first substrate and covering the second dies comprises performing a molding process to form the filling material on the first substrate and performing a planarization process to partially remove the filling material so that the filling material laterally wraps the second dies.

### Claim 4 (depends on 2)

The method of claim 2, wherein performing the dicing process includes cutting through the filling material and the first substrate without cutting through the second dies to separate the stacking structures.

### Claim 5 (depends on 2)

The method of claim 2, further comprising forming a redistribution layer on the second dies and the filling material.

### Claim 6 (depends on 1)

The method of claim 1, wherein bonding the second dies onto the first substrate comprises performing a heating process.

### Claim 7 (depends on 1)

The method of claim 1, wherein bonding the second dies onto the first substrate through bonding the first and second bonding structures includes bonding the second bonding pads with the first bonding pads.

### Claim 8 (depends on 1)

The method of claim 1, wherein one first bonding pad of the first bonding pads is connected with the first heat dissipating element and one second bonding pad of the second bonding pads is connected with the second heat dissipating element, and the one first bonding pad and the one second bonding pad are electrically floating.

### Claim 9

A method for forming stacking structures, comprising:
providing a first substrate having first dies, each first die having a first bonding structures, wherein the first bonding structure includes a first bonding film, first bonding pads embedded in the first bonding film and a first heat dissipating element;
providing second dies, each second die having a second bonding structure, wherein the second bonding structure includes a second bonding film, second bonding pads embedded in the second bonding film and a second heat dissipating element;
bonding the second dies with the first substrate through the first and second bonding structures, wherein the first dies and the second dies are electrically connected and the first and second heat dissipating elements are electrically floating;
forming a filling material over the first substrate and covering the second dies; and
performing a singulation process to cut through the filling material and the first substrate to form the stacking structures.

### Claim 10 (depends on 9)

The method of claim 9, wherein the filling material is formed over the first substrate and is in contact with one first bonding pad that is connected with the first heat dissipating element.

### Claim 11 (depends on 9)

The method of claim 9, wherein bonding the second dies onto the first substrate through the first and second bonding structures includes bonding one first bonding pad that is connected with the first heat dissipating element with one second bonding pad that is connected with the second heat dissipating element.

### Claim 12 (depends on 9)

The method of claim 9, wherein bonding the second dies onto the first substrate through the first and second bonding structures includes bonding one first bonding pad that is connected with the first heat dissipating element with one second bonding pad that is unconnected with the second heat dissipating element.

### Claim 13 (depends on 9)

The method of claim 9, wherein bonding the second dies onto the first substrate through the first and second bonding structures includes bonding one second bonding pad that is connected with the second heat dissipating element with one first bonding pad that is unconnected with the first heat dissipating element.

### Claim 14 (depends on 9)

The method of claim 9, wherein bonding the second dies onto the first substrate through the first and second bonding structures includes bonding the first and second bonding films and bonding the first and second bonding pads so that a bonding interface is located between the first and second bonding film and the first and second bonding pads.

### Claim 15 (depends on 9)

The method of claim 9, further comprising forming a redistribution layer on the second dies and the filling material and forming conductive terminals on the redistribution layer.

### Claim 16

A method for forming stacking structures, comprising:
providing a first substrate having a bonding region and a non-bonding region, wherein the first substrate includes first bonding structures, the first bonding structure includes a first bonding film, first bonding pads embedded in the first bonding film and a first heat dissipating element;
providing second dies onto the bonding region of the first substrate, wherein each second die has a second bonding structure, and the second bonding structure includes a second bonding film, second bonding pads embedded in the second bonding film and a second heat dissipating element;
bonding the second dies with the first substrate through bonding the first and second bonding pads of the first and second bonding structures, wherein the first and second heat dissipating elements are electrically floating;
forming a filling material in the non-bonding region on the first substrate and covering the second dies; and
performing a dicing process to cut through the filling material and the first substrate to form the stacking structures.

### Claim 17 (depends on 16)

The method of claim 16, wherein the first bonding structures include a third heat dissipating element located in the bonding region, and the third heat dissipating element is connected to one first bonding pad of the first bonding pads.

### Claim 18 (depends on 17)

The method of claim 17, wherein the one first bonding pad that is connected with the third heat dissipating element is in contact with the one second bonding pad that is connected with the second heat dissipating element.

### Claim 19 (depends on 16)

The method of claim 16, wherein the filling material is formed in the non-bonding region on the first substrate and is in contact with some of the first bonding pads.

### Claim 20 (depends on 16)

The method of claim 16, wherein the filling material is formed in the non-bonding region on the first substrate and is in contact with one first bonding pad that is connected with the first heat dissipating element.