# US 12,191,280 B2 · Ceramic carrier and build up carrier for light-emitting diode (LED) array > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,191,280 B2 - Document ID: US12191280B2 - Status: Granted - Kind: B2 - Application number: 18/303,378 - Filed: 2023-04-19 - Published: 2023-08-10 - Granted: 2025-01-07 - Earliest claimed: 2020-01-07 - Assignees: Lumileds LLC - Applicants: Lumileds LLC - Inventors: Loon-Kwang Tan; Tze Yang Hin - Web page: https://patentgrep.com/patent/US12191280B2 ## CPC - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10W 90/00: Package configurations - H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) - H10W 70/65: Shapes or dispositions of interconnections - H10W 70/685: comprising multiple insulating layers - H10W 99/00: Subject matter not provided for in other groups of this subclass - H10H 20/0364: {of interconnections} - H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) - H10W 70/692: Ceramics or glasses - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Circuit boards, LED lighting systems and methods of manufacture are described. A circuit board includes a ceramic carrier and a body on the ceramic carrier. The body includes dielectric layers and slots formed completely through a thickness of the dielectric layers. The slots are filled with a dielectric material. A conductive pad is provided on a surface of each of the slots opposite the ceramic carrier. ## Claims ### Claim 1 A method of manufacturing a light-emitting diode (LED) lighting system, the method comprising: adhering a first ceramic carrier to a second ceramic carrier; forming a plurality of first metal pads on each of the first and second ceramic carriers with spaces between each of the plurality of first metal pads on each of the first and second ceramic carriers; forming a layer of a dielectric material over the plurality of first metal pads and filling the spaces between each of the plurality of first metal pads; forming a plurality of vias in the layer of the dielectric material with a respective one of the plurality of vias formed over each of the plurality of first metal pads; filling the plurality of vias with a metal material; and forming a second metal pad over each of the plurality of vias; and separating the first ceramic carrier from the second ceramic carrier after the forming the plurality of first metal pads, the forming the layer of the dielectric material, the forming the plurality of vias, the filling the plurality of vias and the forming the second metal pad. ### Claim 2 (depends on 1) The method of claim 1, wherein the forming the plurality of first metal pads comprises: forming a metal layer over the first ceramic carrier and the second ceramic carrier; forming a photoresist layer over the metal layer; removing portions of the photoresist layer in regions corresponding to the first metal pads to form a plurality of cavities; filling the plurality of cavities with the metal material; and removing all remaining portions of the photoresist layer. ### Claim 3 (depends on 1) The method of claim 1, wherein the forming the plurality of vias in the layer of the dielectric material comprises one of drilling and laser direct imaging to form a plurality of micro-vias or slots. ### Claim 4 (depends on 1) The method of claim 1, further comprising soldering individual LED devices onto the second metals pads. ### Claim 5 (depends on 1) The method of claim 1, further comprising soldering a monolithic LED array onto the second metal pads. ### Claim 6 (depends on 1) The method of claim 1, wherein the first and second ceramic carriers are formed from Aluminum Nitride (AlN). ### Claim 7 (depends on 1) The method of claim 1, wherein the forming the plurality of vias further comprises forming the plurality of vias in pairs such that adjacent pairs of the plurality of vias are spaced apart by spaces each having a width in a range of 20 μm to 200 μm. ### Claim 8 (depends on 7) The method of claim 7, wherein a spacing between each of the vias in each pair is smaller than the spacing between the adjacent pairs. ### Claim 9 (depends on 1) The method of claim 1, wherein each of the plurality of vias has a width in a range of 50 μm to 200 μm. ### Claim 10 (depends on 1) The method of claim 1, wherein the metal material comprises one of copper, silver and nickel. ### Claim 11 (depends on 1) The method of claim 1, wherein the forming the layer of the dielectric material further comprises forming a stack of dielectric layers. ### Claim 12 (depends on 1) The method of claim 1, wherein the stack of dielectric layers comprises an organic dielectric material. ### Claim 13 (depends on 12) The method of claim 12, wherein the stack of dielectric layers has a total thickness in a range of 20 μm to 50 μm. ### Claim 14 (depends on 12) The method of claim 12, wherein the stack of dielectric layers comprises a plurality of dielectric layers stacked one on top of the other with no intervening metal between adjacent layers. ### Claim 15 (depends on 1) The method of claim 1, wherein the forming the plurality of vias in the layer of the dielectric material comprises one of drilling and laser direct imaging to form a plurality of micro-vias or slots. ### Claim 16 (depends on 1) The method of claim 1, further comprising soldering individual LED devices onto the second metals pads.