# US 12,191,274 B2 · Nano-twinned structure on metallic thin film surface and method for forming the same

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- Number: US 12,191,274 B2
- Document ID: US12191274B2
- Status: Granted
- Kind: B2
- Application number: 17/833,822
- Filed: 2022-06-06
- Published: 2023-03-23
- Granted: 2025-01-07
- Earliest claimed: 2021-09-22
- Assignees: Materials Technology Corporation
- Applicants: AG Materials Technology Co., Ltd.
- Inventors: Tung-Han Chuang; Po-Ching Wu; Pei-Ing Lee; Hsing-Hua Tsai
- Web page: https://patentgrep.com/patent/US12191274B2

## CPC

- H10W 72/013: {of die-attach connectors}
- C23C 14/025: {Metallic sublayers}
- C23C 14/14: Metallic material, boron or silicon
- C23C 14/16: on metallic substrates or on substrates of boron or silicon
- C23C 14/22: characterised by the process of coating
- C23C 14/24: Vacuum evaporation
- C23C 14/5833: {Ion beam bombardment}
- C23C 30/00: Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process (C23C26/00, C23C28/00 take precedence)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A nano-twinned structure on a metallic thin film surface is provided. The nano-twinned structure includes a substrate, an adhesive-lattice-buffer layer over the substrate, and a metallic thin film including Ag, Cu, Au, Pd or Ni over the adhesive-lattice-buffer layer. The bottom region of the metallic thin film has equi-axial coarse grains. The surface region of the metallic thin film contains parallel-arranged high-density twin boundaries (Σ3+Σ9) with a pitch from 1 nm to 100 nm. The quantity of the parallel-arranged twin boundaries is 50% to 80% of the total quantity of twin boundaries in the cross-sectional view of the metallic thin film. The parallel-arranged twin boundaries include 30% to 90% [111] crystal orientation. The nano-twinned structure on the metallic thin film surface is formed through a post-deposition ion bombardment on the evaporated metallic thin film surface after the evaporation process.

## Claims

### Claim 1

A method for forming a nano-twinned structure on a metallic thin film surface, comprising:
forming an adhesive-lattice-buffer layer on a substrate;
forming a metallic thin film comprising equi-axial coarse grains on the adhesive-lattice-buffer layer by evaporation; and
performing an ion-beam bombardment, having a temperature of 0° C. to 50° C. and a voltage of 0.01 KeV to 1 KeV, on a surface of the metallic thin film to transform an upper portion of the equi-axial coarse grains into a nano-twinned structure, wherein the nano-twinned structure comprises parallel-arranged twin boundaries (Σ3+Σ9) with a twin spacing of 2 nm to 10 nm, and the parallel-arranged twin boundaries account for 50% to 80% of total twin boundaries in a cross-sectional view of the metallic thin film, wherein the parallel-arranged twin boundaries comprise 30% to 90% [111] crystal orientation.

### Claim 2 (depends on 1)

The method as claimed in claim 1, wherein the adhesive-lattice-buffer layer is formed by sputtering or evaporation.

### Claim 3 (depends on 1)

The method as claimed in claim 1, wherein the ion-beam bombardment has a time of 15 minutes to 10 hours.

### Claim 4 (depends on 1)

The method as claimed in claim 1, further comprising forming a diffusion-barrier-reaction layer between the adhesive-lattice-buffer layer and the metallic thin film by evaporation, sputtering or electroplating.

### Claim 5 (depends on 1)

The method as claimed in claim 1, wherein the substrate comprises a silicon substrate, a silicon carbide substrate, a gallium arsenide substrate, a sapphire substrate or a glass substrate.