# US 12,191,265 B2 · Antenna apparatus and method

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- Number: US 12,191,265 B2
- Document ID: US12191265B2
- Status: Granted
- Kind: B2
- Application number: 18/366,282
- Filed: 2023-08-07
- Published: 2023-11-30
- Granted: 2025-01-07
- Earliest claimed: 2021-02-26
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Feng-Wei Kuo; Wen-Shiang Liao
- Web page: https://patentgrep.com/patent/US12191265B2

## CPC

- H10W 44/20: at high-frequency [HF] or radio frequency [RF]
- H01Q 1/2283: {mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package}
- H01Q 1/241: {used in mobile communications, e.g. GSM (H01Q1/247, H01Q1/248 take precedence)}
- H01Q 9/0407: {Substantially flat resonant element parallel to ground plane, e.g. patch antenna (dipole H01Q9/285; monopole H01Q9/40)}
- H01Q 21/28: Combinations of substantially independent non-interacting antenna units or systems {(multiple beam H01Q25/00)}
- H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04)
- H10W 70/09: extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
- H10W 70/099: {Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers}
- H10W 70/611: {for connecting multiple chips together}
- H10W 70/614: {the multiple chips being integrally enclosed}
- H10W 70/65: Shapes or dispositions of interconnections
- H10W 70/685: comprising multiple insulating layers
- H10W 80/00: Direct bonding of chips, wafers or substrates
- H10W 90/00: Package configurations
- H10W 44/248: {for antennas}
- H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40)
- H10W 70/6528: {of the portions that connect to chips, wafers or package parts}
- H10W 72/241: {Dispositions, e.g. layouts}
- H10W 72/823: {Interconnections through encapsulations, e.g. pillars through molded resin on a lateral side a chip}
- H10W 72/853: {On the same surface}
- H10W 72/874: {On different surfaces}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 72/926: {Multiple bond pads having different sizes}
- H10W 72/9413: {on encapsulations}
- H10W 72/944: {Dispositions of multiple bond pads}
- H10W 90/10: Configurations of laterally-adjacent chips
- H10W 90/28: the stacked chips having different sizes, e.g. chip stacks having a pyramidal shape
- H10W 90/401: {characterised by multiple insulating or insulated package substrates, interposers or RDLs}
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H10W 90/722: {between stacked chips}
- H10W 90/732: {between stacked chips}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/792: {between multiple chips}
- H10W 99/00: Subject matter not provided for in other groups of this subclass
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H01Q: ANTENNAS, i.e. RADIO AERIALS (radiators or antennas for microwave heating H05B6/72)

## Abstract

A package structure includes a first die, a second die over and electrically connected to the first die, an insulating material around the second die, a first antenna extending through the insulating material and electrically connected to the second die, the first antenna being adjacent to a first sidewall of the second die, wherein the first antenna includes a first conductive plate extending through the insulating material, and a plurality of first conductive pillars extending through the insulating material, wherein the first conductive plate is between the plurality of first conductive pillars and the first sidewall of the second die.

## Claims

### Claim 1

A method comprising:
bonding a first die to a second die, wherein bonding the first die to the second die comprises bonding a feed line and first conductive pad of the second die to second conductive pads of the first die;
depositing an insulating material to surround the first die;
etching first openings in the insulating material to expose a third conductive pad of the second die, and etching a second opening in the insulating material to expose the feed line; and
depositing a conductive material in the first openings and the second opening to form a plurality of first conductive pillars in the first openings and a first conductive plate in the second opening.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
forming a redistribution structure over the insulating material, the first die, the plurality of first conductive pillars, and the first conductive plate;
forming first conductive connectors over the redistribution structure, the first conductive connectors being electrically connected to the plurality of first conductive pillars through the redistribution structure; and
forming second conductive connectors over the redistribution structure, the second conductive connectors being electrically connected to the second die through the first die and the feed line.

### Claim 3 (depends on 1)

The method of claim 1, wherein the dielectric constant of the insulating material is in a range from 3.9 to 4.2.

### Claim 4 (depends on 1)

The method of claim 1, wherein depositing the insulating material comprises performing a CVD process using tetra-ethyl-Ortho-silicate (TEOS) and oxygen as a precursor.

### Claim 5 (depends on 4)

The method of claim 4, wherein the insulating material comprises silicon oxide.

### Claim 6 (depends on 1)

The method of claim 1, wherein the second opening is between a sidewall of the first die and the first openings.

### Claim 7 (depends on 1)

The method of claim 1, further comprising:
after depositing the conductive material in the first openings and the second opening, performing a planarization process to level top surfaces of the conductive material with top surfaces of the insulating material and a top surface of the first die.

### Claim 8

A method comprising:
bonding a top die to a bottom die, wherein bonding the top die to the bottom die comprises:
bonding a first conductive pad of the bottom die to a second conductive pad of the top die;
bonding a first feed line of the bottom die to a third conductive pad of the top die; and
bonding a second feed line of the bottom die to a fourth conductive pad of the top die;
encapsulating the top die with a dielectric material;
forming a plurality of first conductive pillars that extend through the dielectric material, the plurality of first conductive pillars being electrically connected to a fifth conductive pad of the bottom die; and
forming a first conductive plate that extends through the dielectric material, the first conductive plate being electrically connected to the first feed line, and wherein the plurality of first conductive pillars and the first conductive plate are adjacent to a first sidewall of the top die.

### Claim 9 (depends on 8)

The method of claim 8, wherein the first conductive plate is disposed between the plurality of first conductive pillars and the first sidewall of the top die.

### Claim 10 (depends on 8)

The method of claim 8, wherein the first conductive plate and the plurality of first conductive pillars comprise copper, silver, platinum, gold, nickel, or tin.

### Claim 11 (depends on 8)

The method of claim 8, further comprising:
forming a plurality of second conductive pillars that extend through the dielectric material; and
forming a second conductive plate that extends through the dielectric material, the second conductive plate being electrically connected to the second feed line, and wherein the plurality of second conductive pillars and the second conductive plate are adjacent to a second sidewall of the top die.

### Claim 12 (depends on 11)

The method of claim 11, wherein the second conductive plate is disposed between the plurality of second conductive pillars and the second sidewall of the top die.

### Claim 13 (depends on 11)

The method of claim 11, wherein the first sidewall of the top die and the second sidewall of the top die are parallel to each other.

### Claim 14 (depends on 11)

The method of claim 11, wherein the first sidewall of the top die and the second sidewall of the top die are perpendicular to each other.

### Claim 15

A method comprising:
bonding a first die to a second die, wherein bonding the first die to the second die comprises forming an oxide-to-oxide bond between a first bonding layer of the first die and a second bonding layer of the second die;
depositing a dielectric material over the second die and around the first die;
forming a first conductive plate extending through the dielectric material and in physical contact with a first feed line of the second die, wherein the first feed line is electrically connected to the first die; and
forming a first conductive grating extending through the dielectric material and electrically connected to the second die, wherein the first conductive plate and the first conductive grating are adjacent to a first sidewall of the first die.

### Claim 16 (depends on 15)

The method of claim 15, wherein the first conductive plate is disposed between the first conductive grating and the first sidewall of the first die.

### Claim 17 (depends on 16)

The method of claim 16, wherein the first conductive grating comprises a conductive mesh.

### Claim 18 (depends on 15)

The method of claim 15, further comprising:
forming a second conductive plate extending through the dielectric material and in physical contact with a second feed line of the second die, wherein the second feed line is electrically connected to the first die; and
forming a second conductive grating extending through the dielectric material and electrically connected to the second die, wherein the second conductive plate and the second conductive grating are adjacent to a second sidewall of the first die.

### Claim 19 (depends on 18)

The method of claim 18, further comprising:
forming a third conductive plate extending through the dielectric material and in physical contact with a third feed line of the second die, wherein the third feed line is electrically connected to the first die; and
forming a third conductive grating extending through the dielectric material and electrically connected to the second die, wherein the third conductive plate and the third conductive grating are adjacent to a third sidewall of the first die.

### Claim 20 (depends on 15)

The method of claim 15, wherein a distance between a sidewall of the first conductive grating and a sidewall of the first conductive plate that faces the sidewall of the first conductive grating is in a range from 10 μm to 9990 μm.