# US 12,191,253 B2 · Semiconductor device with fuse structure

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- Number: US 12,191,253 B2
- Document ID: US12191253B2
- Status: Granted
- Kind: B2
- Application number: 17/839,796
- Filed: 2022-06-14
- Published: 2023-12-14
- Granted: 2025-01-07
- Earliest claimed: 2022-06-14
- Assignees: Nanya Technology Corporation
- Applicants: Nanya Technology Corporation
- Inventors: Hsih-Yang Chiu
- Web page: https://patentgrep.com/patent/US12191253B2

## CPC

- H10W 20/493: {Fuses, i.e. interconnections changeable from conductive to non-conductive}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device is provided. The semiconductor device includes a substrate, a fuse element, and a fuse medium. The fuse element is disposed within the substrate. The fuse medium surrounds a lateral surface of the fuse element.

## Claims

### Claim 1

A semiconductor device, comprising:
a substrate;
a fuse element disposed within the substrate; and
a fuse medium surrounding a lateral surface of the fuse element;
wherein the fuse element comprises polysilicon, and the substrate comprises a first doped region serving as the fuse medium;
wherein the first doped region is spaced apart from an upper surface of the substrate;
wherein the substrate comprises a second doped region between the upper surface of the substrate and the first doped region, and a first dopant concentration of the first doped region is different from a second dopant concentration of the second doped region.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the first dopant concentration is greater than the second dopant concentration.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the second doped region surrounds the lateral surface of the fuse element.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein the substrate comprises a third doped region below the first doped region, and a first dopant concentration of the first doped region is different from a third dopant concentration of the third doped region.

### Claim 5 (depends on 4)

The semiconductor device of claim 4, wherein the first dopant concentration is greater than the third dopant concentration, and the first doped region is spaced apart from a lower surface of the fuse element by the third doped region.

### Claim 6 (depends on 4)

The semiconductor device of claim 4, wherein the third doped region is in contact with a lower surface of the fuse element.

### Claim 7 (depends on 1)

The semiconductor device of claim 1, wherein the first doped region is in contact with the fuse element, and the substrate comprises a fourth doped region spaced apart from the fuse element, the fourth doped region extends from an upper surface of the substrate, and the first doped region overlaps the fourth doped region along a first direction perpendicular to the upper surface of the substrate.

### Claim 8

A semiconductor device, comprising:
a substrate;
a fuse element disposed within the substrate and extending from an upper surface of the substrate; and
a fuse medium in contact with the fuse element, wherein the fuse medium is spaced apart from the upper surface of the substrate;
wherein the fuse element comprises polysilicon, and the substrate comprises a first doped region serving as the fuse medium;
wherein the substrate comprises a second doped region between the upper surface of the substrate and the first doped region, and a first dopant concentration of the first doped region is different from a second dopant concentration of the second doped region.

### Claim 9 (depends on 8)

The semiconductor device of claim 8, wherein the first dopant concentration is greater than the second dopant concentration, and the second doped region is in contact with the fuse element.

### Claim 10 (depends on 8)

The semiconductor device of claim 8, wherein the substrate comprises a third doped region below the first doped region, and a first dopant concentration of the first doped region is different from a third dopant concentration of the third doped region.

### Claim 11 (depends on 10)

The semiconductor device of claim 10, wherein the first dopant concentration is greater than the third dopant concentration, and the first doped region is spaced apart from a lower surface of the fuse element by the third doped region.

### Claim 12 (depends on 10)

The semiconductor device of claim 10, wherein the third doped region is in contact with a lower surface of the fuse element.

### Claim 13 (depends on 8)

The semiconductor device of claim 8, wherein the substrate comprises a fourth doped region spaced apart from the fuse element, and the fourth doped region extends from the upper surface of the substrate.

### Claim 14 (depends on 13)

The semiconductor device of claim 13, wherein the first doped region overlaps the fourth doped region along a first direction perpendicular to the upper surface of the substrate.

### Claim 15 (depends on 8)

The semiconductor device of claim 8, wherein a first boundary of the first doped region is substantially coplanar with a second boundary of the second doped region.