# US 12,191,222 B2 · Integrated fan out device with a filler-free insulating material

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- Number: US 12,191,222 B2
- Document ID: US12191222B2
- Status: Granted
- Kind: B2
- Application number: 18/335,294
- Filed: 2023-06-15
- Published: 2023-10-12
- Granted: 2025-01-07
- Earliest claimed: 2020-10-15
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Wei-Chih Chen; Sih-Hao Liao; Yu-Hsiang Hu; Hung-Jui Kuo
- Web page: https://patentgrep.com/patent/US12191222B2

## CPC

- H10P 72/74: {using temporarily an auxiliary support}
- H10W 74/134: {the encapsulations being in grooves in the semiconductor body}
- H10P 72/7402: {Wafer tapes, e.g. grinding or dicing support tapes}
- H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04)
- H10W 70/479: {on or in insulating or insulated package substrates, interposers, or redistribution layers}
- H10W 70/614: {the multiple chips being integrally enclosed}
- H10W 70/685: comprising multiple insulating layers
- H10W 74/117: {the substrate having spherical bumps for external connection}
- H10W 74/147: {the encapsulations being multilayered}
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H10P 72/7418: {of passive members, e.g. a chip mounting substrate}
- H10P 72/7424: {used as a support during the manufacture of self-supporting substrates}
- H10P 72/743: {used as a support during manufacture of interconnect decals or build up layers}
- H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A redistribution structure is made using filler-free insulating materials with a high shrinkage rate. As a result, good planarity may be achieved without the need to perform a planarization of each insulating layer of the redistribution structure, thereby simplifying the formation of the redistribution structure.

## Claims

### Claim 1

A device comprising:
a redistribution structure coupled to a conductive feature of a substrate, the redistribution structure comprising:
a first conductive layer,
a first insulating layer over the first conductive layer, the first insulating layer comprising a first filler-free insulating material,
a second conductive layer over the first insulating layer, the second conductive layer coupled to the first conducting layer, and
a second insulating layer over the second conductive layer, the second insulating layer comprising a second filler-free insulating material, wherein an upper surface of the second insulating layer is wavy, wherein a difference between an average peak of the upper surface and an average valley of the upper surface is between 3 μm and 5 μm; and
a conductive connector electrically coupled to the redistribution structure.

### Claim 2 (depends on 1)

The device of claim 1, wherein the first filler-free insulating material is different than the second filler-free insulating material.

### Claim 3 (depends on 1)

The device of claim 1, wherein the first conductive layer is three to five times thicker than the second conductive layer.

### Claim 4 (depends on 1)

The device of claim 1, wherein a surface of the second insulating layer is free of polishing marks.

### Claim 5 (depends on 1)

The device of claim 1, wherein the second conductive layer comprises a seed layer and a metal layer over the seed layer, wherein the seed layer conformally coats a recess in the first insulating layer, the recess exposing a portion of the first conductive layer.

### Claim 6 (depends on 1)

The device of claim 1, further comprising:
an encapsulated die, wherein the substrate is a carrier and the substrate is interposed between the redistribution structure and the encapsulated die.

### Claim 7 (depends on 6)

The device of claim 6, further comprising:
a metallization layer disposed in a same layer as the encapsulated die, a thickness of the metallization layer being the same as a thickness of the encapsulated die.

### Claim 8

A device comprising:
a first redistribution structure, the first redistribution structure comprising:
a first metallization pattern,
a first insulating layer adjacent and above an upper surface of the first metallization pattern, the first metallization pattern having a first thickness, the first thickness being measured from a bottom surface of the first insulating layer to an upper surface of the first metallization pattern, and
a second metallization pattern above the first insulating layer, wherein the second metallization pattern extends through the first insulating layer to the first metallization pattern, wherein the first insulating layer has a second thickness between the upper surface of the first metallization pattern and a bottom surface of the second metallization pattern, wherein the second thickness is less than the first thickness; and
an encapsulated die disposed over the first redistribution structure.

### Claim 9 (depends on 8)

The device of claim 8, further comprising:
a carrier disposed between the first redistribution structure and the encapsulated die.

### Claim 10 (depends on 8)

The device of claim 8, wherein the encapsulated die includes a micro-electro-mechanical-system (MEMS) device.

### Claim 11 (depends on 8)

The device of claim 8, wherein the second metallization pattern has a third thickness, wherein the third thickness is less than the first thickness, wherein the first metallization pattern is disposed closer to the encapsulated die than the second metallization pattern.

### Claim 12 (depends on 8)

The device of claim 8, wherein the second metallization pattern comprises a seed layer and a conductive layer, wherein the seed layer conformally coats sidewalls of an opening through the first insulating layer.

### Claim 13 (depends on 8)

The device of claim 8, wherein an upper surface of the first insulating layer is wavy.

### Claim 14 (depends on 8)

The device of claim 8, wherein an upper surface a lowermost insulating layer of the first redistribution structure is wavier than an upper surface of an uppermost insulating layer of the first redistribution structure.

### Claim 15

A device comprising:
a carrier;
a first redistribution structure on the carrier, the first redistribution structure comprising:
a first metallization pattern on a first side of the carrier, the first metallization pattern having a first thickness over the carrier, a first surface of the first metallization pattern being a closest surface of the first metallization pattern to the carrier in a cross-sectional view,
a first insulating layer on the first metallization pattern, a bottom surface of the first insulating layer being level with the first surface of the first metallization pattern, the first insulating layer comprising a first filler free material, and
a second metallization pattern on the first insulating layer, wherein the first insulating layer has a second thickness between the first metallization pattern and the second metallization pattern, wherein the second thickness is less than the first thickness;
a die on a second side of the carrier opposite the first redistribution structure; and
an encapsulant along sidewalls of the die.

### Claim 16 (depends on 15)

The device of claim 15, wherein the first metallization pattern comprises vias extending into the carrier, and further comprising:
conductive lines on the second side of the carrier, wherein the conductive lines are electrically coupled to respective ones of the vias, wherein the encapsulant extends along sidewalls of the conductive lines.

### Claim 17 (depends on 16)

The device of claim 16, wherein the conductive lines comprise via portions, wherein the via portions extend into the carrier to the respective ones of the vias.

### Claim 18 (depends on 15)

The device of claim 15, wherein the first redistribution structure further comprises:
a second insulating layer adjacent the second metallization pattern, the second insulating layer comprising a second filler free material.

### Claim 19 (depends on 18)

The device of claim 18, wherein the first filler free material is different than the second filler free material.

### Claim 20 (depends on 15)

The device of claim 15, wherein an upper surface a lowermost insulating layer of the first redistribution structure closest to the first side of the carrier is wavier than an upper surface of an uppermost insulating layer of the first redistribution structure away from the first side of the carrier.