# US 12,191,215 B2 · Manufacturing and measuring system for semiconductor structures

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- Number: US 12,191,215 B2
- Document ID: US12191215B2
- Status: Granted
- Kind: B2
- Application number: 17/508,961
- Filed: 2021-10-22
- Published: 2023-04-27
- Granted: 2025-01-07
- Earliest claimed: 2021-10-22
- Assignees: Nanya Technology Corporation
- Applicants: Nanya Technology Corporation
- Inventors: Cheng-Ta Cheng; Tsu-Wen Huang
- Web page: https://patentgrep.com/patent/US12191215B2

## CPC

- H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects}
- H10P 74/23: {characterised by multiple measurements, corrections, marking or sorting processes}
- H10P 72/0611: {Sorting devices}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present disclosure relates to a manufacturing and measuring system for semiconductor structures on a wafer. The system includes a process chamber and a measuring device. The process chamber is configured to perform operations of forming a first fin array in a bank of a die of a wafer and forming a second fin array on the first fin array. The measuring device is configured to perform a pattern wafer geometer (PWG) measuring on the wafer to obtain a displacement between a first fin of the first fin array and a first fin of the second fin array, and further configured to determine a status of wafer according to the displacement.

## Claims

### Claim 1

A system for manufacturing and measuring semiconductor structure, comprising:
a process chamber; and
a measuring device,
wherein the process chamber is configured to perform operations including:
forming a first fin array in a bank of a die of a wafer, wherein the first fin array has a plurality of fins including a first fin to a Nth fin spaced apart from each other, wherein N is a positive integer; and
forming a second fin array on the first fin array, wherein the second fin array has a plurality of fins including a first fin to a Nth fin spaced apart from each other, wherein the fins of the first fin array are aligned with the fins of the second fin array respectively when the second fin array overlaps on the first fin array,
wherein when top portions of the first fin and the Nth fin of the first fin array are tilted away therefrom, the measuring device is configured to perform a pattern wafer geometer (PWG) measuring on the wafer to obtain a displacement between the first fin of the first fin array and the first fin of the second fin array by the PWG in nanometer level, to obtain a displacement between the Nth fin of the first fin array and the Nth fin of the second fin array by the PWG in nanometer level, and further configured to determine a status of wafer according to the displacement.

### Claim 2 (depends on 1)

The system of claim 1, wherein the displacement is defined from a top view of the wafer and is determined to a misalignment between the top portion of the first fin of the first fin array and the first fin of the second fin array.

### Claim 3 (depends on 1)

The system of claim 1, wherein N is a positive integer, wherein the measuring device is further configured to:
measure a first overlap ratio of the first fin of the first fin array and the first fin of the second fin array,
measure a second overlap ratio of the Nth fin of the first fin array and the Nth fin of the second fin array, and
measure a center overlap ratio of an Ath fin of the first fin array and an Ath fin of the second fin array, wherein the center overlap ratio is zero, such that a top portion of the Ath fin of the first fin array is aligned with the Ath fin of the second fin array;
wherein when N is an odd number, A is equal to (N+1)/2, and when N is an even number, A is equal to N/2.

### Claim 4 (depends on 3)

The system of claim 3, wherein the measuring device is further configured to:
obtain a first magnification by subtracting the first overlap ratio from the center overlap ratio,
obtain a second magnification by subtracting the second overlap ratio from the center overlap ratio, and
obtain the displacement according the first magnification and the second magnification.

### Claim 5 (depends on 4)

The system of claim 4, wherein the measuring device is further configured to:
obtain an average magnification by averaging the first magnification and the second magnification,
wherein the measuring device comprises a lookup table configured to store a correspondence of the displacement and the average magnification, the measuring device is further configured to obtain the displacement according the lookup table.

### Claim 6 (depends on 1)

The system of claim 1, wherein when the displacement is greater than a threshold value, the status of the wafer is determined as a fail status, and when the displacement is not greater than the threshold value, the status of the wafer is determined as a pass status.

### Claim 7 (depends on 6)

The system of claim 6, wherein when the status of the wafer is the fail status, the process chamber is configured to remove the wafer from a batch of wafers.

### Claim 8 (depends on 6)

The system of claim 6, wherein when the status of the wafer is the pass status, the process chamber is configured to remain the wafer in a batch of wafers.

### Claim 9 (depends on 1)

The system of claim 1, wherein the top portions of the first fin and the Nth fin of the first fin array are outwardly deformed from a center of the first fin array.

### Claim 10 (depends on 1)

The system of claim 1, wherein the top portions of the first fin and the Nth fin of the first fin array are inwardly deformed from a center of the first fin array.

### Claim 11 (depends on 1)

The system of claim 1, wherein the measuring device is configured to measure on the wafer to obtain a second displacement between a top portion of a second fin of the first fin array and a second fin of the second fin array by the PWG, wherein the second displacement is smaller than the displacement between the top portion of the first fin of the first fin array and the first fin of the second fin array.

### Claim 12 (depends on 3)

The system of claim 3, wherein the first overlap ratio is equal to the second overlap ratio.

### Claim 13 (depends on 4)

The system of claim 4, wherein the first magnification is equal to the second magnification.