# US 12,191,192 B2 · Method of forming engineered wafers

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- Number: US 12,191,192 B2
- Document ID: US12191192B2
- Status: Granted
- Kind: B2
- Application number: 16/201,821
- Filed: 2018-11-27
- Published: 2020-02-20
- Granted: 2025-01-07
- Earliest claimed: 2018-01-11
- Applicants: Bing Hu
- Inventors: Bing Hu
- Web page: https://patentgrep.com/patent/US12191192B2

## CPC

- H10P 90/00: Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P 90/1916: {with separation or delamination along an ion implanted layer, e.g. Smart-cut}
- H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- H10D 64/64: Electrodes comprising a Schottky barrier to a semiconductor
- H10H 20/018: {Bonding of wafers}
- H10H 20/019: {Removal of at least a part of a substrate on which semiconductor layers have been formed}
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10P 14/22: using physical deposition, e.g. vacuum deposition or sputtering
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/3416: {Nitrides}
- H10P 95/11: {Separation of active layers from substrates}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10D 8/60: Schottky-barrier diodes
- H10D 62/8325: {Silicon carbide}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Ions are implanted into a first wafer through a top side, generating an ion damaged layer underneath the substrate film of the first wafer. A stress inducing layer is applied on a surface on the top side of the first wafer on one of the ion implanted side and the opposite side. The substrate film is separated from the first wafer at the ion damaged layer. the separated substrate film is bonded to a second wafer at a surface on one of a first side and a second side that this opposite of the first side of the second wafer to form an engineered wafer.

## Claims

### Claim 1

A method of forming a semiconductor engineered wafer, the method comprising:
implanting ions into a donor substrate through a top side, generating an ion damaged layer underneath a substrate film of the donor substrate, wherein the ion dose is controlled based on the ion energy so as to minimize surface damage to the top side of the donor substrate;
forming a stress inducing layer on a surface on one of the ion implanted side and the opposite side of the donor substrate, the stress inducing layer for introducing compressive stress in the donor substrate;
separating the substrate film from the donor substrate at the ion damage layer in response to the compressive stress; and
bonding the separated substrate film after separation to a second wafer at a surface on one of a first side and a second side, the second side being opposite of the first side of the second wafer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the bonding step is performed using one of direct wafer bonding and wafer bonding with intermediate materials.

### Claim 3 (depends on 1)

The method of claim 1, wherein the materials for the donor substrate comprises at least one of SixGe1−x, InxGa1−xAs, InxGa1−xP, InxGayAl1−x−yN, CdTe, ZnO, SiC, and Ga2O3, where 0≤x≤1, 0≤y≤1 and 0≤1−x−y≤1 when bonding the donor substrate to the first side of the second wafer.

### Claim 4 (depends on 1)

The method of claim 1, wherein the donor substrate is formed of one of Si, sapphire, ceramics, poly crystalline SiC, quartz, glass, and metals when bonding to the second side of the second wafer.

### Claim 5 (depends on 1)

The method of claim 1, wherein the implanted ion comprises one of H, He, N, and O.

### Claim 6 (depends on 1)

The method of claim 1, wherein a functional layer is formed on the substrate film of the donor substrate prior to applying the stress inducing layer.

### Claim 7 (depends on 1)

The method of claim 1, further comprising, prior to implanting ions in the donor substrate, forming a functional layer on a surface of the top side of the donor substrate such that the ions are then implanted through the functional layer.

### Claim 8

A method of forming a semiconductor engineered wafer, the method comprising:
providing a donor substrate comprising a first surface on an ion implanted side, a second surface on a side opposite from the ion implanted side, and an ion damaged layer underneath a substrate film of the donor substrate, wherein the ion damaged layer is formed by ion implantation, and wherein the ion dose of the ion implantation is controlled based on the ion energy of the ion implantation so as to minimize surface damage to the first surface of the donor substrate;
forming a stress inducing layer on a surface on one of the ion implanted side and the opposite side of the donor substrate, the stress inducing layer for introducing compressive stress in the donor substrate; and
separating the substrate film from the donor substrate at the ion damage layer in response to the compressive stress;
wherein the semiconductor engineered wafer comprises at least the separated substrate film.

### Claim 9 (depends on 8)

The method of claim 8, wherein the materials for the donor substrate comprises at least one of SixGe1−x, InxGa1−xAs, InxGa1−xP, InxGayAl1−x−yN, CdTe, ZnO SiC, and Ga2O3, where 0≤x≤1, 0≤y≤1 and 0≤1−x−y≤1.

### Claim 10 (depends on 8)

The method of claim 8, wherein the implanted ion comprises one of H, He, N, and O.

### Claim 11 (depends on 8)

The method of claim 8, wherein a functional layer is formed on the substrate film of the donor substrate prior to applying the stress inducing layer.

### Claim 12 (depends on 8)

The method of claim 8, further comprising, prior to implanting ions in the donor substrate, forming a functional layer on a surface of the top side of the donor substrate such that the ions are then implanted through the functional layer.

### Claim 13

A method of forming a semiconductor engineered wafer, the method comprising:
implanting ions into a donor substrate through a top side, generating an ion damaged layer underneath a substrate film of the donor substrate, wherein the ion dose is controlled based on the ion energy so as to minimize surface damage to the top side of the donor substrate;
forming a stress inducing layer on a surface on one of the ion implanted side and the opposite side of the donor substrate, the stress inducing layer for introducing compressive stress in the donor substrate; and
separating the substrate film from the donor substrate at the ion damage layer in response to the compressive stress;
wherein the semiconductor engineered wafer comprises at least the separated substrate film.

### Claim 14 (depends on 13)

The method of claim 13, wherein the materials for the donor substrate comprises at least one of SixGe1−x, InxGa1−xAs, InxGa1−xP, InxGayAl1−x−yN, CdTe, ZnO, SiC, and Ga2O3, where 0≤x≤1, 0≤y≤1 and 0≤1−x−y≤1.

### Claim 15 (depends on 13)

The method of claim 13, wherein the implanted ion comprises one of H, He, N, and O.

### Claim 16 (depends on 13)

The method of claim 13, wherein a functional layer is formed on the substrate film of the donor substrate prior to applying the stress inducing layer.

### Claim 17 (depends on 13)

The method of claim 13, further comprising, prior to implanting ions in the donor substrate, forming a functional layer on a surface of the top side of the donor substrate such that the ions are then implanted through the functional layer.

### Claim 18

A method of forming a semiconductor engineered wafer, the method comprising:
providing a donor substrate comprising a first surface on an ion implanted side, a second surface on a side opposite from the ion implanted side, and an ion damaged layer underneath a substrate film of the donor substrate, wherein the ion damaged layer is formed by ion implantation, and wherein the ion dose of the ion implantation is controlled based on the ion energy of the ion implantation so as to minimize surface damage to the first surface of the donor substrate;
forming a stress inducing layer on the second surface of the donor substrate, the stress inducing layer for introducing compressive stress in the donor substrate;
wherein the substrate film can be separated from the donor substrate at the ion damage layer in response to the compressive stress.