# US 12,191,183 B2 · Wafer placement table and method of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,191,183 B2 - Document ID: US12191183B2 - Status: Granted - Kind: B2 - Application number: 17/453,352 - Filed: 2021-11-03 - Published: 2022-07-21 - Granted: 2025-01-07 - Earliest claimed: 2021-01-20 - Assignees: NGK Insulators, Ltd. - Applicants: Ngk Insulators, Ltd. - Inventors: Masaki Ishikawa; Yuji Akatsuka - Web page: https://patentgrep.com/patent/US12191183B2 ## CPC - H10P 72/722: {Details of electrostatic chucks} - B32B 3/266: {characterised by an apertured layer, the apertures going through the whole thickness of the layer, e.g. expanded metal, perforated layer, slit layer regular cells B32B3/12} - B32B 9/041: {of metal} - B32B 13/00: Layered products comprising a {a layer of} water-setting substance, e.g. concrete, plaster, asbestos cement, or like builders' material - B32B 15/02: {Layer formed of wires, e.g. mesh} - H10P 72/0432: {mainly by conduction} - H10P 72/7616: {characterised by a coating, a hardness or a material} - B32B 7/12: using interposed adhesives or interposed materials with bonding properties - B32B 2250/44: Number of layers variable across the laminate - B32B 2260/023: Two or more layers - B32B 2457/00: Electrical equipment - H01J 37/32715: {Workpiece holder} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract A wafer placement table includes a first ceramic substrate having a wafer placement surface on an upper surface; a second ceramic substrate disposed on a lower surface side of the first ceramic substrate; a metal bonding layer that bonds a lower surface of the first ceramic substrate and an upper surface of the second ceramic substrate; a connection member including an upper base and a lower base, the connection member being embedded in the second ceramic substrate with the upper base in contact with the metal bonding layer; and a power supply terminal electrically connected to the lower base of the connection member, wherein the connection member has a portion in which an area of cross section when the connection member is cut by a plane parallel to the upper base increases from a side of the upper base to a side of the lower base. ## Claims ### Claim 1 A wafer placement table comprising: a first ceramic substrate having a wafer placement surface on an upper surface; a second ceramic substrate disposed on a lower surface side of the first ceramic substrate; a metal bonding layer that bonds the lower surface of the first ceramic substrate and an upper surface of the second ceramic substrate; a connection member including an upper base and a lower base, the connection member being embedded in the second ceramic substrate with the upper base in contact with the metal bonding layer; and a power supply terminal electrically connected to the lower base of the connection member, wherein the connection member has a portion in which two areas of cross section when the connection member is cut by a pair of parallel planes to the upper base increases from a side of the upper base to a side of the lower base, and wherein the connection member is a member in which metal meshes are stacked in multiple stages. ### Claim 2 (depends on 1) The wafer placement table according to claim 1, wherein the second ceramic substrate has a hole in a lower surface of the second ceramic substrate, the hole for inserting the power supply terminal, and a lateral surface of the power supply terminal is bonded to a lateral surface of the hole. ### Claim 3 (depends on 1) The wafer placement table according to claim 1, wherein a shape of the connection member is such that the two areas of cross section when the connection member is cut by a pair of parallel planes to the upper base increases from the upper base to the lower base. ### Claim 4 (depends on 3) The wafer placement table according to claim 3, wherein the shape of the connection member is a truncated cone shape, a truncated hemisphere shape or a shape having a lateral surface inwardly curved as compared with the truncated cone shape. ### Claim 5 A method of manufacturing a wafer placement table, the method comprising: (a) a step of preparing a first ceramic substrate having a wafer placement surface on an upper surface, and a second ceramic substrate in which a connection member including an upper base and a lower base is embedded; (b) a step of forming a bonding surface by grinding the second ceramic substrate so as to expose the upper base of the connection member; and (c) a step of metal bonding a lower surface of the first ceramic substrate and the bonding surface of the second ceramic substrate, wherein the connection member embedded in the second ceramic substrate prepared in step (a) has a portion in which two areas of cross section when the connection member is cut by a pair of parallel planes to the upper base increases from a side of the upper base to a side of the lower base, and wherein the connection member is a member in which metal meshes are stacked in multiple stages. ### Claim 6 A wafer placement table comprising: a first ceramic substrate having a wafer placement surface on an upper surface; a second ceramic substrate disposed on a lower surface side of the first ceramic substrate; a metal bonding layer that bonds the lower surface of the first ceramic substrate and an upper surface of the second ceramic substrate; a connection member including an upper base and a lower base, the connection member being embedded in the second ceramic substrate with the upper base in contact with the metal bonding layer; and a power supply terminal electrically connected to the lower base of the connection member, wherein a shape of the connection member is such that two areas of cross section when the connection member is cut by a pair of parallel planes to the upper base increases from the upper base to the lower base, and wherein the shape of the connection member is a truncated hemisphere shape or a shape having a lateral surface inwardly curved as compared with a truncated cone shape.