# US 12,191,174 B2 · Semiconductor processing tool and method of using an embedded chamber > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,191,174 B2 - Document ID: US12191174B2 - Status: Granted - Kind: B2 - Application number: 17/720,807 - Filed: 2022-04-14 - Published: 2022-12-22 - Granted: 2025-01-07 - Earliest claimed: 2021-06-18 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Co., Ltd. - Inventors: Chia-Cheng Chen; Chih-Kai Yang; Chun-Liang Chen; Wei-Ting Chien; Liang-Yin Chen; Huicheng Chang; Yee-Chia Yeo - Web page: https://patentgrep.com/patent/US12191174B2 ## CPC - H10P 72/0464: {characterised by the construction of the transfer chamber} - G03F 7/40: Treatment after imagewise removal, e.g. baking - H10P 72/0421: {for drying etching} - H10P 72/0432: {mainly by conduction} - H10P 72/0436: {mainly by radiation} - H10P 72/0452: {characterised by the layout of the process chambers} - H10P 72/0461: {characterised by the presence of two or more transfer chambers} - H10P 72/0466: {characterised by the construction of the load-lock chamber} - H10P 72/0418: {for etching} - H10P 72/0471: {comprising at least one ion or electron beam chamber} - H10P 72/0474: {comprising at least one lithography chamber} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract In an embodiment, a pattern transfer processing chamber includes a pattern transfer processing chamber and a loading area external to the pattern transfer processing chamber. The loading area is configured to transfer a wafer to or from the pattern transfer processing chamber. The loading area comprises a first region including a loadport, a second region including a load-lock between the first region and the pattern transfer processing chamber, and an embedded baking chamber configured to heat a patterned photoresist on the wafer. ## Claims ### Claim 1 A method comprising: depositing, in a photolithography tool, a photoresist over a device layer of a semiconductor substrate; patterning, in the photolithography tool, the photoresist to provide a patterned photoresist over the semiconductor substrate; heating, by an embedded baking chamber embedded in a loading area of a pattern transferring tool different from the photolithography tool, the patterned photoresist, wherein the loading area includes a loadport or a load-lock; and performing, by a pattern transfer processing chamber, a pattern transfer operation on the device layer. ### Claim 2 (depends on 1) The method of claim 1, wherein heating the patterned photoresist comprises: heating, by the embedded baking chamber, the patterned photoresist before performing the pattern transfer operation. ### Claim 3 (depends on 1) The method of claim 1, wherein heating the patterned photoresist comprises: heating, by the embedded baking chamber, the patterned photoresist after performing the pattern transfer operation. ### Claim 4 (depends on 3) The method of claim 3, further comprising: after heating the patterned photoresist: performing, by a second pattern transfer processing chamber different from the pattern transfer processing chamber, a second pattern transfer operation on the device layer. ### Claim 5 (depends on 4) The method of claim 4, wherein the pattern transfer processing chamber comprises an etching processing chamber, and wherein the second pattern transfer processing chamber comprises an implantation processing chamber. ### Claim 6 (depends on 1) The method of claim 1, wherein heating the patterned photoresist comprises: heating, by the embedded baking chamber, the patterned photoresist for a duration between 5 seconds and 30 minutes, at a temperature between 70° C. and a glass transition temperature (Tg), and in an ambient environment of clean dry air, N2, or an inert gas with an atmosphere (ATM) pressure. ### Claim 7 (depends on 1) The method of claim 1, wherein performing the pattern transfer operation comprises: performing, by the pattern transfer processing chamber, an etching operation or an implantation operation on the device layer. ### Claim 8 A method comprising: loading a workpiece including a patterned photoresist layer into a loading area of a pattern transfer processing chamber, the loading area including an embedded baking chamber, the loading area and the embedded baking chamber being external from the pattern transfer processing chamber, wherein the embedded baking chamber is within an atmospheric space; heating the workpiece including the patterned photoresist layer in the embedded baking chamber; applying a first vacuum to the workpiece including the patterned photoresist layer with a load-lock; transferring the workpiece including the patterned photoresist layer from the load-lock to the pattern transfer processing chamber, wherein the pattern transfer processing chamber has an atmosphere with a second vacuum; and performing a pattern transfer operation on the workpiece including the patterned photoresist layer within the pattern transfer processing chamber. ### Claim 9 (depends on 8) The method of claim 8, wherein the loading area comprises: a first region including a loadport, and a second region between the first region and the pattern transfer processing chamber, the second region including the load-lock. ### Claim 10 (depends on 8) The method of claim 8, wherein the heating the workpiece includes a heating temperature ranging from 70° C. to a glass transition temperature (Tg) of the patterned photoresist layer. ### Claim 11 (depends on 10) The method of claim 10, wherein after heating the workpiece, and before applying the first vacuum to the workpiece, the workpiece cools from an elevated temperature to room temperature. ### Claim 12 (depends on 8) The method of claim 8, wherein the pattern transfer operation comprises an ion implantation, and the first vacuum ranges includes a pressure ranging between 10−5 torr to 10−6 torr. ### Claim 13 (depends on 8) The method of claim 8, wherein the pattern transfer operation comprises dry etching, and the first vacuum ranges includes a pressure ranging between 10−3 torr to 10−4 torr. ### Claim 14 (depends on 8) The method of claim 8, wherein the heating of the workpiece including the patterned photoresist layer comprises: heating, by the embedded baking chamber, the workpiece before performing the pattern transfer operation. ### Claim 15 (depends on 8) The method of claim 8, wherein the heating of the workpiece including the patterned photoresist layer comprises: heating, by the embedded baking chamber, the workpiece after performing the pattern transfer operation. ### Claim 16 A method comprising: loading a workpiece including a patterned photoresist layer into a load-lock that is within a load area of a pattern transfer processing chamber, wherein the load area is external from the pattern transfer processing chamber; heating the workpiece including the patterned photoresist layer in an embedded baking chamber that is present within the load-lock; applying a first vacuum to the workpiece including the patterned photoresist layer within the load-lock; transferring the workpiece including the patterned photoresist layer from the load-lock to the pattern transfer processing chamber; wherein the pattern transfer processing chamber has an atmosphere with a second vacuum; and performing a pattern transfer operation on the workpiece including the patterned photoresist layer within the pattern transfer processing chamber. ### Claim 17 (depends on 16) The method of claim 16, further comprising a loadport in an atmosphere (ATM) area and external to the pattern transfer processing chamber, wherein the load-lock is between the loadport and the pattern transfer processing chamber. ### Claim 18 (depends on 16) The method of claim 16, wherein the embedded baking chamber is configured to heat the patterned photoresist layer over the workpiece before the workpiece is transferred from the load-lock to the pattern transfer processing chamber. ### Claim 19 (depends on 16) The method of claim 16, wherein the pattern transfer operation is ion implantation, and the first vacuum ranges includes a pressure ranging between 10−5 torr to 10−6 torr. ### Claim 20 (depends on 16) The method of claim 16, wherein the pattern transfer operation is dry etching, and the first vacuum ranges includes a pressure ranging between 10−3 torr to 10−4 torr.