# US 12,191,166 B2 · Substrate processing apparatus and substrate processing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,191,166 B2 - Document ID: US12191166B2 - Status: Granted - Kind: B2 - Application number: 17/425,046 - Filed: 2020-01-15 - Published: 2022-04-28 - Granted: 2025-01-07 - Earliest claimed: 2019-01-23 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Takashi Uno; Satoshi Okawa - Web page: https://patentgrep.com/patent/US12191166B2 ## CPC - H10P 72/0406: {for cleaning followed by drying, rinsing, stripping, blasting or the like} - H10P 72/0414: {using mainly spraying means, e.g. nozzles} - H10P 14/6528: {In-situ cleaning after layer formation, e.g. removing process residues} - H10P 50/00: Etching of wafers, substrates or parts of devices - H10P 52/00: Grinding, lapping or polishing of wafers, substrates or parts of devices - H10P 70/20: {Cleaning during device manufacture} - H10P 72/0418: {for etching} - H10P 72/0424: {using mainly spraying means, e.g. nozzles} - H10P 72/0428: {Apparatus for mechanical treatment or grinding or cutting} - H10P 90/00: Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement - H10W 72/00: Interconnections or connectors in packages - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A substrate processing apparatus configured to process a combined substrate in which a first substrate having thereon a device layer and a second substrate are bonded to each other includes a holder configured to hold a rear surface of the second substrate; a processing unit configured to process the first substrate held by the holder; a first processing liquid supply configured to etch a front surface of the first substrate by supplying a first processing liquid to the front surface of the first substrate opposite to a surface thereof where the device layer is provided; and a second processing liquid supply configured to remove a metal contaminant on the rear surface of the second substrate by supplying a second processing liquid to the rear surface of the second substrate. ## Claims ### Claim 1 A substrate processing method of processing a combined substrate in which a first substrate having thereon a device layer and a second substrate are bonded to each other, the substrate processing method comprising: processing the first substrate in a state that a rear surface of the second substrate is held by a holder; etching a front surface of the first substrate opposite to a surface thereof where the device layer is provided by supplying a first processing liquid to the front surface of the first substrate through a first liquid supply line connected to a first liquid source; removing a metal contaminant on the rear surface of the second substrate by supplying a cleaning liquid to the rear surface of the second substrate through a cleaning liquid supply line connected to a cleaning liquid source; and after the etching of the front surface of the first substrate and after the removing of the metal contaminant on the rear surface of the second substrate, rinsing the front surface of the first substrate and the rear surface of the second substrate at a same time by supplying pure water to the front surface of the first substrate and the rear surface of the second substrate through a pure water supply line connected to a pure water source, wherein the cleaning liquid is an aqueous solution including hydrogen peroxide, and wherein the etching of the front surface by the first processing liquid and the removing of the metal contaminant by the cleaning liquid are performed at a same time. ### Claim 2 (depends on 1) The substrate processing method of claim 1, wherein the etching of the front surface by the first processing liquid and the removing of the metal contaminant by the cleaning liquid are ended at a same time. ### Claim 3 (depends on 1) The substrate processing method of claim 1, wherein at a lateral side of the combined substrate, the first processing liquid does not reach the device layer while the cleaning liquid reaches the device layer. ### Claim 4 (depends on 1) The substrate processing method of claim 1, further comprising: forming an internal modification layer within the first substrate by radiating laser light along a plane direction thereof from a modifying device; separating, by a separating device, a front surface portion of the first substrate from the first substrate, starting from the internal modification layer formed by the modifying device; and grinding, by a processing device, the front surface of the first substrate bonded to the second substrate after the first substrate is separated by the separating device, wherein the first processing liquid is supplied to the front surface of the first substrate ground by the processing device. ### Claim 5 (depends on 1) The substrate processing method of claim 1, further comprising: forming an internal modification layer within the first substrate by radiating laser light along a plane direction thereof from a modifying device; and separating, by a separating device, a front surface portion of the first substrate from the first substrate, starting from the internal modification layer formed by the modifying device, wherein the first processing liquid is supplied to the front surface of the first substrate bonded to the second substrate, after the first substrate is separated by the separating device. ### Claim 6 (depends on 1) The substrate processing method of claim 1, further comprising: grinding the front surface of the first substrate by a processing device, wherein the first processing liquid is supplied to the front surface of the first substrate ground by the processing device. ### Claim 7 (depends on 1) The substrate processing method of claim 1, further comprising: cleaning a peripheral portion of the second substrate by a periphery cleaning device before the cleaning liquid is supplied to the rear surface of the second substrate.