# US 12,191,165 B2 · Wafer transfer system and method of use > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,191,165 B2 - Document ID: US12191165B2 - Status: Granted - Kind: B2 - Application number: 17/502,736 - Filed: 2021-10-15 - Published: 2022-09-22 - Granted: 2025-01-07 - Earliest claimed: 2021-03-19 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Company Limited - Inventors: Kai-Chin Wei - Web page: https://patentgrep.com/patent/US12191165B2 ## CPC - H10P 72/0402: {Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence)} - H10P 72/0466: {characterised by the construction of the load-lock chamber} - C23C 16/458: characterised by the method used for supporting substrates in the reaction chamber - H10P 72/0414: {using mainly spraying means, e.g. nozzles} - H10P 72/0436: {mainly by radiation} - H10P 72/0602: {Temperature monitoring} - H10P 72/0604: {Process monitoring, e.g. flow or thickness monitoring} - H10P 72/3302: {Mechanical parts of transfer devices} - H10P 72/3306: {Horizontal transfer of a single workpiece} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract A wafer transfer system includes a transfer chamber defining a volume. The transfer chamber includes a wafer support within the volume to support a wafer. A first input gas nozzle is disposed above the wafer support and inputs a first flow of gas into the transfer chamber at a first flow speed. A second input gas nozzle is disposed below the wafer support and inputs a second flow of gas into the transfer chamber at a second flow speed different than the first flow speed. A first output gas structure guides the gas from the transfer chamber due to the second flow speed being different than the first flow speed such that suspended particles within the transfer chamber are at least one of directed away from the wafer support or directed toward the first output gas structure to guide the suspended particles from the transfer chamber. ## Claims ### Claim 1 A wafer transfer system, comprising: a transfer chamber defining a volume, the transfer chamber comprising a wafer support within the volume to support a wafer; a first set of gas nozzles, comprising: a first input gas nozzle, disposed above the wafer support within the transfer chamber, to input a first flow of a first gas into the transfer chamber at a first flow speed; a first output gas nozzle disposed above the wafer support within the transfer chamber to guide at least one of the first gas, a second gas, a third gas, or a fourth gas from the transfer chamber; a second input gas nozzle to input a second flow of the second gas into the transfer chamber; and a second output gas nozzle to guide at least one of the first gas, the second gas, the third gas, or the fourth gas from the transfer chamber; and a second set of gas nozzles, comprising: a third input gas nozzle, disposed below the wafer support within the transfer chamber, to input a third flow of the third gas into the transfer chamber at a second flow speed different than the first flow speed; and a fourth input gas nozzle to input a fourth flow of the fourth gas into the transfer chamber; a first output gas structure to guide at least one of the first gas, the second gas, the third gas, or the fourth gas from the transfer chamber due to the second flow speed being different than the first flow speed such that suspended particles within the transfer chamber are at least one of directed away from the wafer support or directed toward the first output gas structure to guide the suspended particles from the transfer chamber, wherein the first output gas structure is configured as a third output gas nozzle; and a fourth output gas nozzle to guide at least one of the first gas, the second gas, the third gas, or the fourth gas from the transfer chamber. ### Claim 2 (depends on 1) The wafer transfer system according to claim 1, wherein the first flow speed of the first flow of the first gas input into the transfer chamber by the first input gas nozzle is less than the second flow speed of the third flow of the third gas input into the transfer chamber by the third input gas nozzle. ### Claim 3 (depends on 1) The wafer transfer system according to claim 1, comprising: a controller to control at least one of the first flow speed of the first flow of the first gas input into the transfer chamber by the first input gas nozzle or the second flow speed of the third flow of the third gas input into the transfer chamber by the third input gas nozzle. ### Claim 4 (depends on 3) The wafer transfer system according to claim 3, wherein the controller controls the first flow speed of the first flow of the first gas input into the transfer chamber by the first input gas nozzle to be less than the second flow speed of the third flow of the third gas input into the transfer chamber by the third input gas nozzle to create a pressure within the transfer chamber below the wafer support that is lower than a pressure within the transfer chamber above the wafer support. ### Claim 5 (depends on 1) The wafer transfer system according to claim 1, comprising: a controller to control a first direction of the first input gas nozzle about a first axis of rotation to control a direction of gas flow within the transfer chamber. ### Claim 6 (depends on 5) The wafer transfer system according to claim 5, wherein the controller controls a second direction of the first input gas nozzle about a second axis of rotation to control the direction of gas flow within the transfer chamber. ### Claim 7 (depends on 6) The wafer transfer system according to claim 6, wherein the controller controls at least one of the first direction of the first input gas nozzle to dynamically change about the first axis of rotation or the second direction of the first input gas nozzle to dynamically change about the second axis of rotation to dynamically control the direction of gas flow within the transfer chamber. ### Claim 8 (depends on 5) The wafer transfer system according to claim 5, wherein: the first output gas structure is disposed below the wafer support, and the controller controls the first direction of the first input gas nozzle dynamically about the first axis of rotation, a second direction of the first output gas nozzle dynamically about a second axis of rotation, a third direction of the third-second input gas nozzle dynamically about a third axis of rotation, and a fourth direction of the third output gas nozzle dynamically about a fourth axis of rotation to dynamically control the direction of gas flow within the transfer chamber. ### Claim 9 A wafer transfer system, comprising: a transfer chamber forming a volume, the transfer chamber comprising a wafer support within the volume to support a wafer; a first input gas nozzle, disposed above the wafer support within the transfer chamber, to input a first flow of a first gas into the transfer chamber at a first flow speed; a second input gas nozzle, disposed below the wafer support within the transfer chamber, to input a second flow of a second gas into the transfer chamber at a second flow speed different than the first flow speed; a first output gas structure to guide at least one of the first gas or the second gas from the transfer chamber due to the second flow speed being different from the first flow speed such that suspended particles within the transfer chamber are at least one of directed away from the wafer support or directed toward the first output gas structure to guide the suspended particles from the transfer chamber; and a controller to control a first direction of the first input gas nozzle about a first axis of rotation to control a direction of gas flow within the transfer chamber and to control a second direction of the first input gas nozzle about a second axis of rotation to control the direction of gas flow within the transfer chamber. ### Claim 10 (depends on 9) The wafer transfer system according to claim 9, wherein the first flow speed of the first flow of the first gas input into the transfer chamber by the first input gas nozzle is less than the second flow speed of the second flow of the second gas input into the transfer chamber by the second input gas nozzle. ### Claim 11 (depends on 9) The wafer transfer system according to claim 9, comprising: a first output gas nozzle disposed above the wafer support within the transfer chamber to guide at least one of the first gas or the second gas from the transfer chamber. ### Claim 12 (depends on 11) The wafer transfer system according to claim 11, comprising: a first set of gas nozzles, comprising the first input gas nozzle and the first output gas nozzle; and a second set of gas nozzles, comprising the second input gas nozzle and the first output gas structure configured as a second output gas nozzle. ### Claim 13 (depends on 9) The wafer transfer system according to claim 9, wherein the controller controls at least one of the first flow speed of the first flow of the first gas input into the transfer chamber by the first input gas nozzle or the second flow speed of the second flow of the second gas input into the transfer chamber by the second input gas nozzle. ### Claim 14 (depends on 13) The wafer transfer system according to claim 13, wherein the controller controls the first flow speed of the first flow of the first gas input into the transfer chamber by the first input gas nozzle to be less than the second flow speed of the second flow of the second gas input into the transfer chamber by the second input gas nozzle to create a pressure within the transfer chamber below the wafer support that is lower than a pressure within the transfer chamber above the wafer support. ### Claim 15 (depends on 9) The wafer transfer system according to claim 9, wherein the controller controls at least one of the first direction of the first input gas nozzle to dynamically change about the first axis of rotation or the second direction of the first input gas nozzle to dynamically change about the second axis of rotation to dynamically control the direction of gas flow within the transfer chamber. ### Claim 16 (depends on 9) The wafer transfer system according to claim 9, comprising: a first set of gas nozzles, comprising the first input gas nozzle and a first output gas nozzle, disposed above the wafer support; and a second set of gas nozzles, comprising the second input gas nozzle and the first output gas structure configured as a second output gas nozzle disposed below the wafer support, wherein the controller controls the first direction of the first input gas nozzle dynamically about the first axis of rotation, a third direction of the first output gas nozzle dynamically about a third axis of rotation, a fourth direction of the second input gas nozzle dynamically about a fourth axis of rotation, and a fifth direction of the second output gas nozzle dynamically about a fifth axis of rotation to dynamically control the direction of gas flow within the transfer chamber. ### Claim 17 A wafer transfer system, comprising: a transfer chamber defining a volume, the transfer chamber comprising a wafer support within the volume to support a wafer; a first set of gas nozzles, comprising: a first input gas nozzle, disposed above the wafer support within the transfer chamber, to input a first flow of a first gas into the transfer chamber at a first flow speed; and a first output gas nozzle disposed above the wafer support; a second set of gas nozzles, comprising: a second input gas nozzle, disposed below the wafer support within the transfer chamber, to input a second flow of a second gas into the transfer chamber at a second flow speed different than the first flow speed; and a first output gas structure to guide at least one of the first gas or the second gas from the transfer chamber due to the second flow speed being different than the first flow speed such that suspended particles within the transfer chamber are at least one of directed away from the wafer support or directed toward the first output gas structure to guide the suspended particles from the transfer chamber, wherein the first output gas structure is configured as a second output gas nozzle disposed below the wafer support; and a controller to control a first direction of the first input gas nozzle dynamically about a first axis of rotation, a second direction of the first output gas nozzle dynamically about a second axis of rotation, a third direction of the second input gas nozzle dynamically about a third axis of rotation, and a fourth direction of the second output gas nozzle dynamically about a fourth axis of rotation to dynamically control a direction of gas flow within the transfer chamber. ### Claim 18 (depends on 17) The wafer transfer system according to claim 17, wherein the first flow speed of the first flow of the first gas input into the transfer chamber by the first input gas nozzle is less than the second flow speed of the second flow of the second gas input into the transfer chamber by the second input gas nozzle. ### Claim 19 (depends on 17) The wafer transfer system according to claim 17, wherein the controller controls at least one of the first flow speed of the first flow of the first gas input into the transfer chamber by the first input gas nozzle or the second flow speed of the second flow of the second gas input into the transfer chamber by the second input gas nozzle. ### Claim 20 (depends on 19) The wafer transfer system according to claim 19, wherein the controller controls the first flow speed of the first flow of the first gas input into the transfer chamber by the first input gas nozzle to be less than the second flow speed of the second flow of the second gas input into the transfer chamber by the second input gas nozzle to create a pressure within the transfer chamber below the wafer support that is lower than a pressure within the transfer chamber above the wafer support.