# US 12,191,161 B2 · Multi-step isotropic etch patterning of thick copper layers for forming high aspect-ratio conductors > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,191,161 B2 - Document ID: US12191161B2 - Status: Granted - Kind: B2 - Application number: 17/132,282 - Filed: 2020-12-23 - Published: 2022-06-23 - Granted: 2025-01-07 - Earliest claimed: 2020-12-23 - Assignees: Intel Corporation - Applicants: Intel Corporation - Inventors: Oladeji Fadayomi; Jeremy Ecton; Oscar Ojeda - Web page: https://patentgrep.com/patent/US12191161B2 ## CPC - H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) - H10W 70/685: comprising multiple insulating layers - H10W 70/65: Shapes or dispositions of interconnections - H10W 70/635: {Through-vias} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An integrated circuit device, comprising a substrate comprising a dielectric material and a conductor on or within the dielectric material of the substrate. The conductor comprises a first portion comprising a first sloped sidewall, wherein a first base width of the first portion is greater than a first top width of the first portion. The conductor also comprises a second portion over the first portion, the second portion comprising a second sloped sidewall, wherein a second base width of the upper portion is greater than both a second top width of the second portion and the first top width of the first portion. ## Claims ### Claim 1 An integrated circuit (IC) device, comprising: a substrate comprising a dielectric material; and a conductor on or within the dielectric material of the substrate, the conductor comprising: a first portion comprising a first sloped sidewall, a first base, and a first top, wherein the first sloped sidewall is from the first top to the first base, and a first base width of the first portion is greater than a first top width of the first portion; and a second portion over the first portion, the conductor comprising a conductive material. the conductive material continuous between and comprising the first and second portions, the second portion comprising a second sloped sidewall, a second base, and a second top, wherein: the second sloped sidewall is from the second top to the second base; and a second base width of the second portion is greater than both: a second top width of the second portion; and the first base width of the first portion. ### Claim 2 (depends on 1) The IC device of claim 1, wherein the second portion overhangs the first sloped sidewall of the first portion by a distance that is substantially equal to half of a difference between the second base width and the first top width. ### Claim 3 (depends on 1) The IC device of claim 1, further comprising at least a third portion over the second portion, the third portion comprising a third sloped sidewall, wherein a third base width of the third portion is greater than a third top width of the third portion. ### Claim 4 (depends on 3) The IC device of claim 3, wherein the third portion overhangs the second sloped sidewall of the second portion by a distance that is substantially equal to half of a difference between the third base width and the second top width. ### Claim 5 (depends on 3) The IC device of claim 3, wherein the first portion of the conductor has a first z-height, the second portion of the conductor has a second z-height and the third portion of the conductor has a third z-height, and wherein a sum of the first, second and third z-heights is approximately equal to or greater than the third base width of the conductor. ### Claim 6 (depends on 1) The IC device of claim 1, wherein the conductor is a first conductor, wherein a second conductor is adjacent to the first conductor, the second conductor comprising: a third portion comprising a third sloped sidewall and having a third base width greater than a third top width, wherein the third sloped sidewall is adjacent to the first sloped sidewall, and a fourth portion over the third portion, the fourth portion comprising a fourth sloped sidewall and having a fourth base width greater than a fourth top width, wherein the fourth sloped sidewall is adjacent to the second sloped sidewall. ### Claim 7 (depends on 6) The IC device of claim 6, wherein: a first minimum distance is between the first sloped sidewall and the third sloped sidewall, and a second minimum distance is between the second sloped sidewall and the fourth sloped sidewall, wherein the second minimum distance is less than the first minimum distance. ### Claim 8 (depends on 7) The IC device of claim 7, wherein the second minimum distance is less than 10 microns. ### Claim 9 (depends on 1) The IC device of claim 1, further comprising an IC die coupled to the conductor and to the substrate by the conductor. ### Claim 10 An integrated circuit (IC) device, comprising: a substrate comprising a dielectric material; and a conductor within the dielectric material of the substrate, the conductor comprising: a first portion comprising a first base having a first base width, a first top having a first top width, and a first sloped sidewall from the first top to the first base, the first base width greater than the first top width, the first sloped sidewall in contact with the dielectric material; and a second portion over the first portion, the conductor comprising a conductive material, the conductive material continuous between and comprising the first and second portions, the second portion comprising a second base having a second base width, a second top having a second top width, and a second sloped sidewall from the second top to the second base, the second base width greater than the second top width, the second sloped sidewall in contact with the dielectric material, and an overhang from the second sloped sidewall to the first sloped sidewall. ### Claim 11 (depends on 10) The IC device of claim 10, wherein the first portion has a first z-height and the second portion has a second z-height, and wherein the second z-height is greater than the first z-height. ### Claim 12 (depends on 11) The IC device of claim 11, wherein a sum of the first z-height and the second z-height is equal to or greater than the second base width of the second portion. ### Claim 13 (depends on 10) The IC device of claim 10, wherein the first sloped sidewall and the second sloped sidewall have a convex curvature. ### Claim 14 (depends on 10) The IC device of claim 10, further comprising an IC die coupled to the conductor and to the substrate by the conductor. ### Claim 15 (depends on 14) The IC device of claim 14, wherein the substrate is a printed circuit board (PCB) or an IC package substrate. ### Claim 16 (depends on 15) The IC device of claim 15, wherein the IC die comprises a power interconnect electrically coupled to the conductor on or within the PCB or the IC package substrate. ### Claim 17 (depends on 15) The IC device of claim 15, wherein the substrate is the PCB and the conductor has a z-height greater than 35 microns, and wherein the conductor is a power trace or an interconnect on or within the PCB. ### Claim 18 An integrated circuit (IC) device, comprising: a substrate comprising a dielectric material; and a conductor on or within the dielectric material of the substrate, the conductor having a pagoda-like cross-section, the conductor comprising: a first portion comprising a first curved sidewall and a top of the first portion; and a second portion over the first portion, the second portion comprising a second curved sidewall, a base of the second portion, and an overhang over the first curved sidewall, wherein a second base width of the second portion is greater than a first top width of the first portion, and the overhang is from the first curved sidewall and the top of the first portion to the second curved sidewall and the base of the second portion. ### Claim 19 (depends on 18) The IC device of claim 18, wherein the first portion has a first z-height and the second portion has a second z-height, and wherein the second z-height is greater than the first z-height. ### Claim 20 (depends on 19) The IC device of claim 19, wherein a sum of the first z-height and the second z-height is equal to or greater than the second base width of the second portion. ### Claim 21 (depends on 18) The IC device of claim 18, wherein the conductor has a substantially circular perimeter having a diameter, and the second base width is approximately equal to the diameter of the conductor. ### Claim 22 (depends on 18) The IC device of claim 18, wherein the conductor has a rectangular perimeter having a rectangular perimeter width and a rectangular perimeter length, and the second base width is approximately equal to the rectangular perimeter width of the conductor. ### Claim 23 (depends on 22) The IC device of claim 22, wherein the rectangular perimeter length of the conductor is greater than the rectangular perimeter width of the conductor. ### Claim 24 (depends on 22) The IC device of claim 22, wherein the rectangular perimeter width of the conductor is less than 10 microns. ### Claim 25 (depends on 18) The IC device of claim 18, further comprising an IC die coupled to the conductor and to the substrate by the conductor.