# US 12,191,141 B2 · Plasma etching method using perfluoroisopropyl vinyl ether

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- Number: US 12,191,141 B2
- Document ID: US12191141B2
- Status: Granted
- Kind: B2
- Application number: 17/917,155
- Filed: 2021-02-18
- Published: 2023-05-25
- Granted: 2025-01-07
- Earliest claimed: 2020-04-06
- Assignees: Ajou University Industry-Academic Cooperation Foundation
- Applicants: Ajou University Industry-Academic Cooperation Foundation
- Inventors: Chang-Koo Kim; Jun-Hyun Kim
- Web page: https://patentgrep.com/patent/US12191141B2

## CPC

- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H01J 37/32: Gas-filled discharge tubes (heating by discharge H05B)
- H10P 50/283: {by chemical means}
- H10P 50/73: {using masks for insulating materials}
- H01J 37/32009: {Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources (plasma generation in general H05H1/24)}
- H01J 2237/334: Etching
- Y02C 20/30: of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- Y02C: CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

A plasma etching method is disclosed. The plasma etching method comprises: a first step of vaporizing liquid perfluoroisopropyl vinylether (PIPVE); a second step of supplying, to a plasma chamber in which an object to be etched is arranged, the vaporized PIPVE and a discharge gas comprising argon gas; and a third step of discharging the discharge gas so as to generate plasma, and using same so as to plasma-etch the object to be etched.

## Claims

### Claim 1

A plasma etching method comprising:
a first step of vaporizing liquid perfluoroisopropyl vinyl ether (PIPVE);
a second step of supplying a discharge gas containing the vaporized PIPVE and argon gas to a plasma chamber in which an etching target is disposed; and
a third step of discharging the discharge gas to generate plasma and of performing plasma etching on the etching target using the generated plasma.

### Claim 2 (depends on 1)

The method of claim 1, wherein in order to vaporize the liquid PIPVE and then provide the vaporized PIPVE to the etching chamber, a first container accommodating the liquid PIPVE therein is heated to a first temperature equal to or higher than a boiling point of the PIPVE, and a connecting pipe connecting the first container to the etching chamber is heated to a second temperature higher than the first temperature.

### Claim 3 (depends on 1)

The method of claim 1, wherein the vaporized PIPVE and the argon gas are supplied to the etching chamber at a flow rate ratio in a range of 12:88 to 8:92.

### Claim 4 (depends on 1)

The method of claim 1, wherein the discharge gas further contains oxygen.

### Claim 5 (depends on 4)

The method of claim 4, wherein the PIPVE gas, the argon gas and the oxygen are supplied to the etching chamber so that a ratio of a flow rate of the oxygen and a sum of a flow rate of the PIPVE gas and the flow rate of the argon gas is in a range of 1:9 to 2:8.

### Claim 6 (depends on 1)

The method of claim 1, wherein a bias voltage in a range of −1200V to −800V is applied to a substrate supporting the etching target thereon in the etching chamber during the third step.

### Claim 7 (depends on 6)

The method of claim 6, wherein a source power in a range of 300 to 1500 W is applied to a plasma source coupled to the etching chamber to generate plasma of the discharge gas during the third step.

### Claim 8 (depends on 1)

The method of claim 1, wherein the etching target is a silicon oxide thin film.