# US 12,191,140 B2 · Method for manufacturing semiconductor device and substrate processing apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,191,140 B2 - Document ID: US12191140B2 - Status: Granted - Kind: B2 - Application number: 17/804,170 - Filed: 2022-05-26 - Published: 2022-12-01 - Granted: 2025-01-07 - Earliest claimed: 2021-06-01 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Yutaka Motoyama; Atsushi Endo - Web page: https://patentgrep.com/patent/US12191140B2 ## CPC - H10P 14/6903: {containing silicon} - H10P 50/242: {of Group IV materials} - C23C 16/24: Deposition of silicon only - C23C 16/455: characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber - C23C 16/4584: {the substrate being rotated} - H10P 14/24: using chemical vapour deposition [CVD] - H10P 14/2905: {Silicon, silicon germanium or germanium} - H10P 14/2925: {Surface structures} - H10P 14/3211: {Silicon, silicon germanium or germanium} - H10P 14/3238: {being insulating materials} - H10P 14/3244: {Layer structure} - H10P 14/3248: {consisting of two layers} - H10P 14/3411: {Silicon, silicon germanium or germanium} - H10P 14/6319: {Formation by plasma treatments, e.g. plasma oxidation of the substrate} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract A method for manufacturing a semiconductor device includes supplying a silicon-containing gas to a substrate having a recess formed in a surface of the substrate to deposit a silicon film in the recess, supplying, to the substrate, a first etching gas having a first etching profile in which an amount of etching for an upper portion of the recess in a depth direction and an amount of etching for a lower portion of the recess in the depth direction are different from each other, to etch the silicon film in the recess, supplying, to the substrate, a second etching gas having a second etching profile that is different from the first etching profile of the first etching gas to etch the silicon film in the recess, and additionally depositing the silicon film on the already deposited silicon film etched by the second etching gas. ## Claims ### Claim 1 A method for manufacturing a semiconductor device, comprising: supplying a silicon-containing gas to a substrate having a recess formed in a surface of the substrate to deposit a silicon film in the recess; supplying, to the substrate, a first etching gas having a first etching profile in which an amount of etching for an upper portion of the recess in a depth direction and an amount of etching for a lower portion of the recess in the depth direction are different from each other, to etch the silicon film in the recess; supplying, to the substrate, a second etching gas having a second etching profile that is different from the first etching profile of the first etching gas to etch the silicon film in the recess; and additionally depositing the silicon film on the already deposited silicon film etched by the second etching gas, wherein the first etching gas includes chlorine gas and nitrogen gas, and the second etching gas includes chlorine gas and nitrogen gas, and wherein a mixing ratio of the chlorine gas and the nitrogen gas in the second etching gas is different from the first etching gas. ### Claim 2 (depends on 1) The method for manufacturing the semiconductor device according to claim 1, wherein in the first etching profile of the first etching gas, the amount of etching for the upper portion of the recess in the depth direction is higher than the amount of etching for the lower portion of the recess in the depth direction, a ratio of the amount of etching for the lower portion to the amount of etching for the upper portion in the second etching profile of the second etching gas is more than a ratio of the amount of etching for the lower portion to the amount of etching for the upper portion in the first etching profile of the first etching gas, or in the second etching profile of the second etching gas, the amount of etching for the upper portion is the same as the amount of etching for the lower portion. ### Claim 3 (depends on 2) The method for manufacturing the semiconductor device according to claim 2, wherein the first etching profile is a profile for widening an opening in the silicon film on the upper portion to make the opening a shallow V-shaped opening, and the second etching profile is a profile for forming a deep V-shaped opening in the silicon film on the lower portion. ### Claim 4 (depends on 1) The method for manufacturing the semiconductor device according to claim 1, wherein the first etching gas and the second etching gas are generated by adding, to the chlorine gas, the nitrogen gas with different flow rates. ### Claim 5 (depends on 4) The method for manufacturing the semiconductor device according to claim 4, wherein a flow rate of the diluent gas is higher in the second etching gas than in the first etching gas. ### Claim 6 (depends on 1) The method for manufacturing the semiconductor device according to claim 1, wherein the recess is in such a shape that unevenness is formed on a lateral surface of the recess. ### Claim 7 (depends on 1) The method for manufacturing the semiconductor device according to claim 1, wherein the supplying of the first etching gas to the substrate to etch the silicon film in the recess, the supplying of the second etching gas to the substrate to etch the silicon film in the recess, and the additional depositing of the silicon film on the already deposited silicon film are repeatedly performed. ### Claim 8 (depends on 1) The method for manufacturing the semiconductor device according to claim 1, further comprising, between the supplying of the first etching gas to the substrate to etch the silicon film in the recess and the supplying of the second etching gas to the substrate to etch the silicon film in the recess, additionally depositing the silicon film on the already deposited silicon film etched by the first etching gas. ### Claim 9 A method for manufacturing a semiconductor device, comprising: supplying a silicon-containing gas to a substrate having a recess formed in a surface of the substrate to deposit a silicon film in the recess; supplying, to the substrate, a first etching gas having a first etching profile in which an amount of etching for an upper portion of the recess in a depth direction and an amount of etching for a lower portion of the recess in the depth direction are different from each other, to etch the silicon film in the recess; executing at least once a cycle including additionally depositing the silicon film on the already deposited silicon film etched by the first etching gas; executing at least once a first cycle including supplying the first etching gas to the substrate to etch the silicon film in the recess and additionally depositing the silicon film on the already deposited silicon film; supplying, to the substrate, a second etching gas having a second etching profile that is different from the first etching profile of the first etching gas to etch the silicon film in the recess; additionally depositing the silicon film on the already deposited silicon film etched by the second etching gas; and executing at least once a second cycle including supplying the second etching gas to the substrate to etch the silicon film in the recess and additionally depositing the silicon film on the already deposited silicon film, wherein the first etching gas includes chlorine gas and nitrogen gas, and the second etching gas includes chlorine gas and nitrogen gas, and wherein a mixing ratio of the chlorine gas and the nitrogen gas in the second etching gas is different from the first etching gas. ### Claim 10 (depends on 9) The method for manufacturing the semiconductor device according to claim 9, wherein in the first etching profile of the first etching gas, the amount of etching for the upper portion of the recess in the depth direction is higher than the amount of etching for the lower portion of the recess in the depth direction, a ratio of the amount of etching for the lower portion to the amount of etching for the upper portion in the second etching profile of the second etching gas is less than a ratio of the amount of etching for the lower portion to the amount of etching for the upper portion in the first etching profile of the first etching gas, or in the second etching profile of the second etching gas, the amount of etching for the upper portion is the same as the amount of etching for the lower portion. ### Claim 11 (depends on 10) The method for manufacturing the semiconductor device according to claim 10, wherein the first etching profile is a profile for widening an opening in the silicon film on the upper portion to make the opening a shallow V-shaped opening, and the second etching profile is a profile for forming a deep V-shaped opening in the silicon film on the lower portion. ### Claim 12 (depends on 9) The method for manufacturing the semiconductor device according to claim 9, wherein the first etching gas and the second etching gas are generated by adding, to the chlorine gas, the nitrogen gas with different flow rates. ### Claim 13 (depends on 12) The method for manufacturing the semiconductor device according to claim 12, wherein a flow rate of the diluent gas is higher in the second etching gas than in the first etching gas. ### Claim 14 (depends on 9) The method for manufacturing the semiconductor device according to claim 9, wherein the recess is in such a shape that unevenness is formed on a lateral surface of the recess. ### Claim 15 (depends on 9) The method for manufacturing the semiconductor device according to claim 9, wherein the supplying of the first etching gas to the substrate to etch the silicon film in the recess, the supplying of the second etching gas to the substrate to etch the silicon film in the recess, and the additional depositing of the silicon film on the already deposited silicon film are repeatedly performed.